界面电荷对应变硅(s-Si)在绝缘子上硅锗(SGOI) mosfet上亚阈值电流和亚阈值摆幅影响的分析建模

2012 5th International Conference on Computers and Devices for Communication (CODEC) Pub Date : 2012-12-01 DOI:10.1109/CODEC.2012.6509255

M. Kumar, S. Dubey, S. Jit, P. Tiwari

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引用次数: 1

摘要

提出了一种基于表面电位的亚阈值电流和亚阈值摆动的二维解析模型，该模型考虑了应变硅(s-Si)对绝缘体上硅锗(SGOI) mosfet的热载子界面电荷效应。该分析模型考虑了所有器件参数以及松弛Si1-xGex层中Ge摩尔分数、界面电荷密度和损伤区长度对亚阈值特性的影响。为了验证所提出的模型，将模型结果与Silvaco在二维器件模拟器ATLAS上获得的数值模拟结果进行了比较。

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An analytical modeling of interface charge induced effects on subthreshold current and subthreshold swing of strained-Si (s-Si) on Silicon-Germinium-on-Insulator (SGOI) MOSFETs

A surface potential based two-dimensional (2-D) analytical model for subthreshold current and subthreshold swing including the hot carrier induced interface charges effect of strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs is presented. The analytical model takes into account the effects of all device parameters along with Ge mole fraction in the relaxed Si1-xGex layer, interface charge density and length of damaged region on subthreshold characteristics. For the validation of the proposed model, the model results are compared with numerical simulation results obtained from 2-D device simulator ATLAS by Silvaco.

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2012 5th International Conference on Computers and Devices for Communication (CODEC)

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