2020 Device Research Conference (DRC)最新文献_第2页

Doped WS2 transistors with large on-off ratio and high on-current 具有大通断比和高通流的掺杂WS2晶体管

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135155

A. Kumar, K. N. Nazif, P. Ramesh, K. Saraswat

引用次数: 5

First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate GaN垂直功率场效应管在工程基板上的首次演示

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135176

Ahmad Zubair, J. Perozek, J. Niroula, O. Aktas, V. Odnoblyudov, T. Palacios

{"title":"First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate","authors":"Ahmad Zubair, J. Perozek, J. Niroula, O. Aktas, V. Odnoblyudov, T. Palacios","doi":"10.1109/DRC50226.2020.9135176","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135176","url":null,"abstract":"GaN vertical power FinFETs are promising high voltage switches for the next generation of high-frequency power electronics applications. Thanks to a vertical fin channel, the device offers excellent electrostatic and threshold voltage control, eliminating the need for epitaxial regrowth 1 or p-type doping 2 unlike other vertical GaN power transistors. Vertical GaN FinFETs with 1200 V breakdown voltage (BV), 5 A current rating and excellent switching figure of merit have been demonstrated recently on free-standing GaN substrates 3 . Despite this promising performance, the commercialization of these devices has been limited by the high cost ($50-$100/cm 2 ) and small diameter (~ 2 inch) of free-standing GaN substrates. The use of GaN-on-Si wafers could reduce the substrate cost by ×1000, however the growth of the thick (~10 μm or thicker) drift layers required for kV class applications is extremely challenging on Si. Alternatively, GaN grown on engineered substrates (QST ® ) with a matched thermal expansion coefficient could enable low-cost vertical GaN FinFETs with thick (>10 μm) drift layers and large wafer diameters (8-12 inch). In this work, we demonstrate GaN power FinFETs on engineered substrates for the first time.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128432008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Near-Nernstian pH Sensors Based on Hydrothermally Grown NiO Nanosheets on Hierarchically Roughened Si Substrates 基于水热生长NiO纳米片的非线性pH传感器

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135168

C. Kuo, Shui-Jinn Wang, Po-Ting Chen, R. Ko

引用次数: 0

Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode GaN冲击电离雪崩传递时间(IMPATT)二极管的演示

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135173

D. Ji, B. Ercan, Jia Zhuang, Lei Gu, J. Rivas-Davila, S. Chowdhury

引用次数: 4

Understanding of Multiple Resistance States by Current-sweep Measurement and Compliance Current Modulation in 2D MoS2-based Non-volatile Resistance Switching Devices 基于二硫化钼的二维非易失性电阻开关器件中电流扫描测量和遵从性电流调制的多电阻状态理解

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135187

Xiaohan Wu, Ruijing Ge, D. Akinwande, Jack C. Lee

{"title":"Understanding of Multiple Resistance States by Current-sweep Measurement and Compliance Current Modulation in 2D MoS2-based Non-volatile Resistance Switching Devices","authors":"Xiaohan Wu, Ruijing Ge, D. Akinwande, Jack C. Lee","doi":"10.1109/DRC50226.2020.9135187","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135187","url":null,"abstract":"Various two-dimensional materials, such as graphene oxide, solution-processed or phase-change transitional metal dichalcogenides (TMDs), degraded black phosphorus and multilayer hexagonal boron nitride (h-BN) [ 1 - 5 ], have been reported to exhibit non-volatile resistance switching (NVRS) phenomenon, in which the resistance can be reversibly switched between a high resistance state (HRS) and a low resistance state (LRS) through external electrical bias and maintained without power supply. Recently, we reported the observation of NVRS in single-layer TMDs and h-BN atomristors (memristor effect in atomically thin nanomaterials) with forming-free characteristic, large on/off current ratio (up to 10 7 ) and fast switching speed (< 15 ns) [ 6 - 8 ]. Here, to investigate the switching mechanisms in the 2D monolayers, we introduced a new electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves, showing multiple transition steps in the SET process. Moreover, by varying the SET compliance current in voltage-sweep measurement, multiple resistance states can be obtained with a range of five orders of magnitude. These results provide strong evidence for the previously reported conductive-bridge-like model of 2D atomristors [8] , and enable further applications in multi-bit data storage and analog-like neuromorphic computing.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127930944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devices 二维铂二硒基器件中材料结构与电子性能的相关性

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135167

Sebastian Lukas, S. Kataria, M. Prechtl, Oliver Hartwig, A. Meledin, J. Mayer, D. Neumaier, G. Duesberg, M. Lemme

引用次数: 0

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment 氟处理正常关闭InAlN/GaN Fin-MOSHEMT

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135151

Yi-Ping Huang, Ching-Sung Lee, W. Hsu

引用次数: 2

Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage 具有超低反漏的近理想Ru/ n极GaN肖特基二极管

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135165

Wenjian Liu, I. Sayed, B. Romanczyk, N. Hatui, Jana Georgieva, Haoran Li, S. Keller, U. Mishra

{"title":"Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage","authors":"Wenjian Liu, I. Sayed, B. Romanczyk, N. Hatui, Jana Georgieva, Haoran Li, S. Keller, U. Mishra","doi":"10.1109/DRC50226.2020.9135165","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135165","url":null,"abstract":"N-polar GaN based HEMTs have demonstrated superior performance for solid-state millimeter wave power amplifiers [1] , [2] . To further improve the high-frequency and high-power performance in N-polar GaN HEMTs, using a small gate length while preserving a good aspect ratio is critical. Currently, N-polar HEMTs utilize a thin gate dielectric to reduce gate leakage. This reduces the aspect ratio. Therefore, removing the gate dielectrics, i.e. using Schottky-HEMTs in N-polar GaN is very attractive to pursue highly scaled and high-performance devices. Previous studies [3] – [6] have shown that the barrier heights between the gate metals and N-polar GaN are relatively low and the reverse leakages may be too high to be used in practical Schottky-HEMTs. Here, we report the first investigation of ruthenium (Ru) on N-polar GaN Schottky barrier. The device shows near-ideal Schottky characteristic under reverse bias and forward bias . The barrier height values at various temperatures extracted from the forward bias region and the reverse bias region agree well. The extracted barrier height is 0.77 eV at room temperature. The reverse leakage is ultralow with ~10 -6 A/cm 2 at -5 V and follows ideal thermionic behavior .","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130794532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors 实现纳米级真空通道晶体管的大气工作

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/drc50226.2020.9135162

G. Rughoobur, J. Zhao, L. Jain, Ahmad Zubair, T. Palacios, J. Kong, A. Akinwande

{"title":"Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors","authors":"G. Rughoobur, J. Zhao, L. Jain, Ahmad Zubair, T. Palacios, J. Kong, A. Akinwande","doi":"10.1109/drc50226.2020.9135162","DOIUrl":"https://doi.org/10.1109/drc50226.2020.9135162","url":null,"abstract":"A vacuum channel transistor is the ultimate wide band-gap structure with potential for high Johnson figure of merit (~10 14 V/s) due to no electron scattering and no impact ionization/breakdown [1] , [2] . Hence, nanoscale vacuum channel transistors (NVCTs) can possibly outperform solid-state transistors in terms of speed, breakdown voltage and reliability in harsh environments [1] . Carriers are injected into the channel by electron tunneling across a barrier narrowed by an electric field. Such electron sources can be realized using nanoscale gated Si field emitter arrays (FEAs) with high packing densities (≥10 8 /cm 2 ) and self-aligned apertures which have low turn-on voltage (8.5 V), low operating voltage, high current density (150 A/cm 2 ) and long lifetime (>300 hours) [3] . The barrier height is nonetheless sensitive to adsorption/desorption of gas molecules, resulting in large current variations in poor vacuum, which can also generate energetic ions that erode the emitter. Hence FEAs require costly and bulky ultra-high vacuum (UHV) systems for reliability [4] . Using multi-layers of graphene (Gr) that withstand high pressure gradients and, are transparent to electrons, but impervious to gas molecules, can enable operation of these FEAs in poor vacuum [5] , [6] . In this paper, Gr layers are used to encapsulate such FEAs with two self-aligned gates ( Fig. 1 ); this structure allows an independent control of the bias applied to the Gr layer, and significantly reduces the volume to be encapsulated.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133442017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz 线性合成:30 GHz时OIP3/(F-1)PDC为10.1的本质线性AlGaN/GaN-on-Si晶体管

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135184

Woojin Choi, V. Balasubramanian, P. Asbeck, S. Dayeh

引用次数: 2