2020 Device Research Conference (DRC)最新文献

Effect of recessed electrodes on contact resistance in Organic Thin Film Transistor based on polymer dielectric 嵌入式电极对聚合物介质有机薄膜晶体管接触电阻的影响

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135178

Fiheon Imroze, C. Mithun, Karunakaran Logesh, P. Venkatakrishnan, S. Dutta

引用次数: 1

High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory Ar/N2等离子溅射制备n掺杂LaB6金属薄膜的高k LaBxNy栅极绝缘体及其在浮栅存储器中的应用

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135143

K. Park, S. Ohmi

引用次数: 0

High-Density Multilayer Graphene Microelectrode Arrays for Optogenetic Electrophysiology in Human Embryonic Kidney Cells 高密度多层石墨烯微电极阵列用于人胚胎肾细胞的光遗传电生理

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135174

Jinyoung Park, D. Mao, Yaowei Xie, Z. Xiong, Guangyu Xu

{"title":"High-Density Multilayer Graphene Microelectrode Arrays for Optogenetic Electrophysiology in Human Embryonic Kidney Cells","authors":"Jinyoung Park, D. Mao, Yaowei Xie, Z. Xiong, Guangyu Xu","doi":"10.1109/DRC50226.2020.9135174","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135174","url":null,"abstract":"Optogenetic electrophysiology offers high precision cellular analysis by electrophysiological recording under optogenetic control [1] , [2] . Such studies often use microelectrode arrays (MEA) to obtain massively parallel recording from densely packed cells. Among the MEA materials, graphene has been suggested to be well suited for optogenetic electrophysiology [1] - [3] , enabling transparent, flexible, and low-noise MEAs for in vivo recording of the local field potential (LFP) [1] . To date, most graphene microelectrodes were 25-300 μm in size to achieve high signal-to-noise ratios, and placed in a 150-900 μm pitch for single-unit recording [1] , [3] . Such device dimension however has limited spatial resolution compared to closely-packed silicon MEAs [4] , and cannot offer spatial oversampling of the cell activity. Here we present a 28-μm pitched multilayer graphene MEA with 13-μm sized electrodes, the smallest in literature, for high-density optogenetic electrophysiology in human embryonic kidney (HEK) cells. Our MEA was made of CVD-grown multilayer graphene for its low sheet resistance, which was one-time transferred onto a Si/SiO 2 substrate, instead of layer-by-layer transfer steps (see [2] ) that may increase the electrode impedance by contaminants. Our electrodes had 2 MΩ impedance at 1 kHz (2.38 Ω•cm 2 ) in electrochemical impedance spectroscopy (EIS), 6 times smaller than those made by layer-by-layer transfer steps if they were made in the same size [2] . Our MEA was able to record optogenetically evoked extracellular signals in HEK cells co-expressed with opsins ( ChR2 ) and Ca 2+ reporters ( jRCAMP1a ) [5] . The signal amplitude increased with the intensity (not the duration) of the optogenetic stimulus, and qualitatively matched the position of optogenetically responsive cells (confirmed by jRCAMP1a imaging). Our work suggests the possible use of multiplayer graphene MEA for optogenetic electrophysiology in HEK cells.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128407589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Utilizing Valley-Spin Hall Effect in WSe2 for Low Power Non-Volatile Flip-Flop Design 利用WSe2的谷自旋霍尔效应设计低功耗非易失性触发器

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135153

K. Cho, S. Thirumala, X. Liu, Niharika Thakuria, Zhihong Chen, S. Gupta

引用次数: 0

Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts 具有PtOx触点的Ga2O3肖特基势垒二极管具有4.3 MV/cm的极高平行平面表面电场

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135177

Devansh Saraswat, Wenshen Li, K. Nomoto, D. Jena, H. Xing

引用次数: 5

Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design 用于异构集成和柔性射频电路设计的GaN hemt微转移打印

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135179

B. Downey, A. Xie, S. Mack, D. Katzer, J. Champlain, Yu Cao, N. Nepal, T. A. Growden, V. Gokhale, R. Coffie, M. Hardy, E. Beam, Cathy Lee, D. Meyer

{"title":"Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design","authors":"B. Downey, A. Xie, S. Mack, D. Katzer, J. Champlain, Yu Cao, N. Nepal, T. A. Growden, V. Gokhale, R. Coffie, M. Hardy, E. Beam, Cathy Lee, D. Meyer","doi":"10.1109/DRC50226.2020.9135179","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135179","url":null,"abstract":"Heterogeneous integration of complementary materials and device technologies is a demonstrated pathway for meeting the demand for next generation RF and mixed-signal circuits and has historically been accomplished via chip or circuit level wafer bonding and through-substrate vias [1] . A more intimate approach is integration at the device level via a micro-assembly technique such as micro-transfer printing [2] , which uses a polymer stamp to pick-and-place individual devices released from a source substrate to a multi-technology target substrate with micron-level alignment accuracy. This approach decouples the device technology from the growth substrate and enables technology agnostic circuit design and application-specific substrate choice. Here we demonstrate micro-transfer printing of GaN high-electron-mobility transistors (HEMTs) released from SiC growth substrates to other technologically relevant substrates such as Si and diamond. We show that there is no significant degradation in DC electrical characteristics after transfer printing, improved thermal performance can be achieved when the devices are transferred to single crystal diamond, and that post-transfer processing, such as interconnect metallization is possible with standard 2D lithographic techniques.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132597159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Ultra-Durable and Reliable High-k Textile Capacitors for Wearables and Robotics 用于可穿戴设备和机器人的超耐用和可靠的高k纺织电容器

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135181

Akanksha Rohit, Y. Kelestemur, S. Kaya, Parthiban Rajan

{"title":"Ultra-Durable and Reliable High-k Textile Capacitors for Wearables and Robotics","authors":"Akanksha Rohit, Y. Kelestemur, S. Kaya, Parthiban Rajan","doi":"10.1109/DRC50226.2020.9135181","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135181","url":null,"abstract":"Emerging printed sensors and wearable technologies are creating a major impact in the area of health monitoring and robotics. The use of flexible and compact sensors that have wireless connectivity is a must in the Internet-of-Things era (IoT) which can provide personalized care and accurate decision-making capabilities to monitor vital signs and abnormalities in patient care. This work focuses on multipurpose wearable smart textile-based patches for monitoring biomedical health and physical activity. The patches have capacitive sensor elements that can capture critical information on the strength, frequency and duration between specific episodes of movements in the arms, legs and torso [1] as well as motion and proximity feedback in robotics applications. The performance of these extremely thin, light and elastic capacitive patches can be enhanced by use of silicone dielectric elastomer with Barium Titanate Oxide (BaTiO 3 /BTO) nano-particles. BaTiO 3 has a perovskite structure of the form ABO 3 that has many useful properties including high-k dielectric constant, piezoelectricity and ferroelectricity [2] . The grain size of BTO nanoparticles (50 nm and 500nm) has a profound effect in the elastomeric dielectric of the capacitive patches by changing the dielectric constant and incorporating piezoelectricity to the patches [3] . This work illustrates the important features of such composite capacitive patches and their potential for sensing motion, temperature and impact.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117226438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

GaN Nanowire Field Emitters with a Self-Aligned Gate Process 具有自对准栅极工艺的氮化镓纳米线场发射体

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135161

Pao-Chuan Shih, G. Rughoobur, P. Xiang, Kai Liu, K. Cheng, A. Akinwande, T. Palacios

引用次数: 5

Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering 用Kr/ o2等离子溅射形成的铁电非掺杂HfO2进行mfset的低压工作

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135170

S. Ohmi, M. Kim, M. Kataoka, M. Hayashi, R. M. D. Mailig

引用次数: 4

Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight 缺陷辅助金属- tmd界面工程:第一原理洞察

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135158

J. Kumar, Ansh, Hemanjaneyulu Kuruva, M. Shrivastava

{"title":"Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight","authors":"J. Kumar, Ansh, Hemanjaneyulu Kuruva, M. Shrivastava","doi":"10.1109/DRC50226.2020.9135158","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135158","url":null,"abstract":"2D materials make the scientific land more fertile to harvest future generation of high-performance electronic devices. Among these, TMDs are more promising for switching applications due to its band gap and stability over Graphene and Phosphorene respectively. Despite of these properties, performance of the TMDs FET is not achieved to its expectation yet due to high contact resistance at the metal-TMDs interfaces. Different metal-TMDs interfaces have been explored for contact resistance reduction [1] , [2] , [3] but, a systematic study of metal induced gap states [MIGS] for TMDs and corresponding engineering to improve the contact resistance is missing yet. To explore the gap, we have done systematic study of interaction of different metals ( Au, Cr, Ni and Pd ) with MoS 2 , MoSe 2 , WS 2 and WSe 2 followed by impact of chalcogen vacancy on corresponding interactions using Density Functional Theory (DFT). Chalcogen vacancy reduces all the metal-TMDs bond distance which can reduce corresponding contact resistance due to reduction in the tunneling barrier width. Defect engineering also converts intrinsic n-type Pd-TMDs contacts into p-type which can help in MoS 2 based CMOS circuit in future.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"409 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133935173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4