Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts

β-Ga 2 O 3 has emerged as a potentially-disruptive wide-bandgap semiconductor material for high power applications, largely due to its high breakdown electric field of ~8 MV/cm. To access the full benefit of Ga 2 O 3 , a high electric field close to the breakdown field should be sustained in devices under reverse blocking. This is a challenging task, especially given the fact that functional p-n homojunctions might never be feasible in Ga 2 O 3 . As a result, alternative reverse blocking junctions, such as Schottky barriers [1] , p-n heterojunctions [2] and MIS-structures with high-k dielectrics [3] are being investigated. Among them, Schottky barriers have highly-desirable advantages, including less stringent requirements on the interface quality compared to p-n heterojunctions, as well as an absence of reliability concerns – an issue in dielectrics.