2020 Device Research Conference (DRC)最新文献_第5页

Stopping Resistance Drift in Phase Change Memory Cells 阻止相变存储单元的电阻漂移

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135147

R. S. Khan, A. H. Talukder, F. Dirisaglik, A. Gokirmak, H. Silva

{"title":"Stopping Resistance Drift in Phase Change Memory Cells","authors":"R. S. Khan, A. H. Talukder, F. Dirisaglik, A. Gokirmak, H. Silva","doi":"10.1109/DRC50226.2020.9135147","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135147","url":null,"abstract":"Phase change memory (PCM) is a high speed, high endurance, high density non-volatile memory technology that utilizes chalcogenide materials such as Ge 2 Sb 2 Te 5 (GST) that can be electrically cycled between highly resistive amorphous and low resistance crystalline phases. The resistance of the amorphous phase of PCM cells increase (drift) in time following a power law [1] , which increases the memory window in time but limits in the implementation of multi-bit-per-cell PCM. There has been a number of theories explaining the origin of drift [1] – [4] , mostly attributing it to structural relaxation, a thermally activated rearrangement of atoms in the amorphous structure [2] . Most of the studies on resistance drift are based on experiments at or above room temperature, where multiple processes may be occurring simultaneously. In this work, we melt-quenched amorphized GST line cells with widths ~120-140 nm, lengths ~390-500 nm, and thickness ~50nm ( Fig. 1 ) and monitored the current-voltage (I-V) characteristics using a parameter analyzer ( Fig. 2 ) in 85 K to 350 K range. We extracted the drift co-efficient from the slope of the resistance vs. time plots (using low-voltage measurements) and observed resistance drift in the 125 K -300 K temperature range ( Fig. 3 ). We found an approximately linear increase in drift coefficient as a function of temperature from ~ 0.07 at 125 K to ~ 0.11 at 200 K and approximately constant drift coefficients in the 200 K to 300 K range ( Fig. 3 inset). These results suggest that structural relaxations alone cannot account for resistance drift, additional mechanisms are contributing to this phenomenon [5] , [6] .","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114920884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates 在InP衬底上生长数字合金Al0.4Ga0.07In0.53As雪崩光电二极管的倍增特性

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135156

Seunghyun Lee, S. Kodati, D. Fink, T. Ronningen, A. Jones, J. Campbell, M. Winslow, C. Grein, S. Krishna

引用次数: 0

Materials and Technology Issues for the Next Generation of Power Electronic Devices 新一代电力电子器件的材料与技术问题

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135183

Ahmad Zubair, J. Niroula, N. Chowdhury, Yuhao Zhang, J. Lemettinen, T. Palacios

引用次数: 0

Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications 用于非易失性存储器的极化诱导应变耦合TMD fet (PS fet)

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135172

Niharika Thakuria, A. Saha, S. Thirumala, Daniel S. Schulman, Saptarshi Das, S. Gupta

引用次数: 3

2-μm-Compatible AlInAsSb Avalanche Photodiodes 2 μm兼容AlInAsSb雪崩光电二极管

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135144

A. Jones, S. March, S. Bank, J. Campbell

{"title":"2-μm-Compatible AlInAsSb Avalanche Photodiodes","authors":"A. Jones, S. March, S. Bank, J. Campbell","doi":"10.1109/DRC50226.2020.9135144","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135144","url":null,"abstract":"The 2-μm optical window has recently become an area of great interest for imaging and LIDAR applications due to improved ranging capability and eye safety compared to common telecommunications wavelengths. Avalanche photodiodes (APDs) operating in this spectrum are highly desirable, as their intrinsic gain offers increased sensitivity over traditional photodiodes, further improving receiver sensitivity. HgCdTe, InAs, and InSb, as well as various superlattice materials have been used for this purpose, however, the combination of high electric field and narrow-bandgap absorber yields high dark current. As a result, these APDs are operated at cryogenic temperatures to suppress recombination mechanisms. At the high electric fields required for impact ionization, narrow bandgap materials are also susceptible to band-to-band tunneling, which cannot be suppressed by cooling. The separate absorption, charge, and multiplication (SACM) APD was designed to address this challenge by reducing the electric field in the absorber while maintaining sufficiently high enough field in the multiplication region for impact ionization [1] . This design spatially separates the absorption and multiplication layers, controlling the electric field in the absorber and multiplication layers through an intermediate charge layer. SACM APDs have been widely deployed in the InGaAs/InP and InGaAs/InAlAs materials systems for use in near-infrared telecommunications applications.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121000519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT 利用器件级导数叠加降低n极GaN MISHEMT中偏置线性灵敏度的新概念

2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135169

P. Shrestha, M. Guidry, B. Romanczyk, Rohit R. Karnaty, N. Hatui, C. Wurm, A. Krishna, S. Pasayat, S. Keller, J. Buckwalter, U. Mishra

引用次数: 3