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Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates 在InP衬底上生长数字合金Al0.4Ga0.07In0.53As雪崩光电二极管的倍增特性
2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135156
Seunghyun Lee, S. Kodati, D. Fink, T. Ronningen, A. Jones, J. Campbell, M. Winslow, C. Grein, S. Krishna
{"title":"Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates","authors":"Seunghyun Lee, S. Kodati, D. Fink, T. Ronningen, A. Jones, J. Campbell, M. Winslow, C. Grein, S. Krishna","doi":"10.1109/DRC50226.2020.9135156","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135156","url":null,"abstract":"Avalanche photodiodes (APDs) are used in short- and mid-wave infrared applications such as optical communication, LIDAR and 3D imaging [1] due to their internal gain, which improves the signal to noise ratio (SNR). However, the multiplication gain ( M ) gives rise to excess noise, caused by the stochastic nature of impact ionization, which can significantly degrade the SNR of APDs. The excess noise is quantitatively measured by excess noise factor, F(M) that is expressed by McIntyre’s local field theory [1] , F(M) = kM + (1-k)[2-(1/M)] where k is the ratio of the impact ionization coefficients for electrons and holes. According to the equation above, the low excess noise factor in APDs can be attained by a low k value.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125812414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Using Coplanar Waveguides as Spin-Wave Sources with Improved Bandwidth 利用共面波导作为提高带宽的自旋波源
2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135163
H. Aquino, D. Connelly, A. Orlov, J. Chisum, G. Bernstein, W. Porod
{"title":"Using Coplanar Waveguides as Spin-Wave Sources with Improved Bandwidth","authors":"H. Aquino, D. Connelly, A. Orlov, J. Chisum, G. Bernstein, W. Porod","doi":"10.1109/DRC50226.2020.9135163","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135163","url":null,"abstract":"Spin waves show potential as an alternative to electric current for computing and signal processing, which require low-power and small size. One approach to using spin waves is to convert millimeter or microwave electrical signals to spin waves having micrometer wavelengths. All signal processing is then done by the diffraction and interference of spin waves traveling through a magnetic thin film. These waves are then converted back into electrical signals [1] , [2] .","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127982491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Millimeter-Wave GaN Device Modeling for Power Amplifiers 功率放大器的毫米波GaN器件建模
2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135149
Y. Yamaguchi, K. Nakatani, K. Teo, S. Shinjo
{"title":"Millimeter-Wave GaN Device Modeling for Power Amplifiers","authors":"Y. Yamaguchi, K. Nakatani, K. Teo, S. Shinjo","doi":"10.1109/DRC50226.2020.9135149","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135149","url":null,"abstract":"Millimeter-wave (mm-wave) applications such as the satellite communication (Sat-com) system and the fifth-generation (5G) mobile communication system have attracted a great deal of attention. In the mm-wave applications, a GaN device which can obtain high power at mm-wave band is considered as one of the promising device for power amplifiers (PA) as shown in Fig. 1 [1] . In order to realize the attractive GaN PA, a GaN device model with high accuracy at mm-wave band is required for design of GaN PA. However, there are still some problems to obtain a large-signal model with high accuracy at mm-wave band. One of the problems is trapping effects under large-signal operation. Modeling of trapping effects on drain current and trans-conductance has been already reported in [2] .This paper presents a GaN device model including trapping effects on non-linear capacitance and a Ka-band high efficiency GaN Doherty PA designed by using the proposed model.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114349488","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications 用于非易失性存储器的极化诱导应变耦合TMD fet (PS fet)
2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135172
Niharika Thakuria, A. Saha, S. Thirumala, Daniel S. Schulman, Saptarshi Das, S. Gupta
{"title":"Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory Applications","authors":"Niharika Thakuria, A. Saha, S. Thirumala, Daniel S. Schulman, Saptarshi Das, S. Gupta","doi":"10.1109/DRC50226.2020.9135172","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135172","url":null,"abstract":"Among several non-volatile memories (NVMs), ferroelectric (FE) based memories show distinct advantages due to electric field ( E )-driven low-power write [1] - [2] . However, there are other concerns in FE based NVMs (such destructive read in FERAMs [3] , gate leakage in FEFETs with floating inter-layer metal (ILM) [5] and traps and depolarization fields in FEFETs without ILM [4] ). To overcome such issues while retaining the useful features of FE, we propose a Polarization-induced Strain coupled TMD FET (PS FET) [ Fig. 1(a) ] that features (a) polarization-based non-volatile bit-storage (b) E-driven write and (c) coupling of piezoelectricity with dynamic bandgap (EG) tuning of 2D Transition Metal Dichalcogenides (TMDs) for read [ Fig. 1(b) ].","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117253418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
2-μm-Compatible AlInAsSb Avalanche Photodiodes 2 μm兼容AlInAsSb雪崩光电二极管
2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135144
A. Jones, S. March, S. Bank, J. Campbell
{"title":"2-μm-Compatible AlInAsSb Avalanche Photodiodes","authors":"A. Jones, S. March, S. Bank, J. Campbell","doi":"10.1109/DRC50226.2020.9135144","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135144","url":null,"abstract":"The 2-μm optical window has recently become an area of great interest for imaging and LIDAR applications due to improved ranging capability and eye safety compared to common telecommunications wavelengths. Avalanche photodiodes (APDs) operating in this spectrum are highly desirable, as their intrinsic gain offers increased sensitivity over traditional photodiodes, further improving receiver sensitivity. HgCdTe, InAs, and InSb, as well as various superlattice materials have been used for this purpose, however, the combination of high electric field and narrow-bandgap absorber yields high dark current. As a result, these APDs are operated at cryogenic temperatures to suppress recombination mechanisms. At the high electric fields required for impact ionization, narrow bandgap materials are also susceptible to band-to-band tunneling, which cannot be suppressed by cooling. The separate absorption, charge, and multiplication (SACM) APD was designed to address this challenge by reducing the electric field in the absorber while maintaining sufficiently high enough field in the multiplication region for impact ionization [1] . This design spatially separates the absorption and multiplication layers, controlling the electric field in the absorber and multiplication layers through an intermediate charge layer. SACM APDs have been widely deployed in the InGaAs/InP and InGaAs/InAlAs materials systems for use in near-infrared telecommunications applications.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121000519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT 利用器件级导数叠加降低n极GaN MISHEMT中偏置线性灵敏度的新概念
2020 Device Research Conference (DRC) Pub Date : 2020-06-01 DOI: 10.1109/DRC50226.2020.9135169
P. Shrestha, M. Guidry, B. Romanczyk, Rohit R. Karnaty, N. Hatui, C. Wurm, A. Krishna, S. Pasayat, S. Keller, J. Buckwalter, U. Mishra
{"title":"A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT","authors":"P. Shrestha, M. Guidry, B. Romanczyk, Rohit R. Karnaty, N. Hatui, C. Wurm, A. Krishna, S. Pasayat, S. Keller, J. Buckwalter, U. Mishra","doi":"10.1109/DRC50226.2020.9135169","DOIUrl":"https://doi.org/10.1109/DRC50226.2020.9135169","url":null,"abstract":"N-polar GaN MISHEMTs have recently demonstrated excellent power performance and power-added efficiency at 94 GHz [1] . At mm-wave frequencies and high data rates, the linearity of an RF transistor is an important requisite. Third-order non-linearities lead to undesirable effects such as in-band signal distortion and are therefore important to control. This study presents a novel device concept to enhance the linearity of N-polar GaN MISHEMTs at millimeter wave frequencies (30 GHz and beyond) for low-power receiver application. We have recently reported linearity data on N-polar GaN MISHEMTs with OIP3/P DC of 11.4 dB [2] and 15 dB [3] at 30 GHz. We have observed in [2] , [3] that the peak linearity performance is limited to a narrow input-bias range, resulting in susceptibility to process and temperature variations. Therefore, we explore a novel device structure that can provide its best OIP3/P DC performance over a wide input-bias range.","PeriodicalId":397182,"journal":{"name":"2020 Device Research Conference (DRC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121115791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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