68th Device Research Conference最新文献_第9页

Scalability study of In0.7Ga0.3As HEMTs for 22nm node and beyond logic applications 22nm节点及以上逻辑应用的In0.7Ga0.3As hemt可扩展性研究

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551941

E. Hwang, S. Mookerjea, M. Hudait, S. Datta

引用次数: 0

Low Power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs 基于退化掺杂源(DDS) In0.53Ga0.47As隧道场效应管的低功率无负载4T SRAM电池

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551859

V. Saripalli, D. Mohata, S. Mookerjea, S. Datta, V. Narayanan

{"title":"Low Power Loadless 4T SRAM cell based on degenerately doped source (DDS) In0.53Ga0.47As Tunnel FETs","authors":"V. Saripalli, D. Mohata, S. Mookerjea, S. Datta, V. Narayanan","doi":"10.1109/DRC.2010.5551859","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551859","url":null,"abstract":"We propose a Loadless 4T SRAM cell using degenerately doped source (DDS) p-channel In0.53Ga0.47As Tunnel FETs (TFETs) as dual purpose access/load devices and low leakage steep sub-threshold n-channel TFETs as drive devices. A Loadless 4T CMOS SRAM cell [1] has the requirement that the leakage current of the PMOS access transistors should be larger than the leakage current of the NMOS drive transistors to maintain state. In this paper, we introduce a p-type TFET with a degenerately doped source, which has a kT/q sub-threshold slope, compared to an n-type TFET which has a sub-kT/q slope. This difference in sub-threshold behaviour of the DDS PTFET and DDS NTFET helps to maintain the IOFF ratio which is required for cell stability. We explain the temperature dependent sub-threshold characteristics of the In0.53Ga0.47As (DDS) p-TFET by analyzing the position of the Fermi level in the source of the p-TFET as a function of source doping. Further, the asymmetric source drain architecture of the TFETs is exploited to solve the adjacent bit flip problem of unselected Loadless 4T SRAM cells during a column write operation. Finally, we include a comparison of the leakage energy and cell access time of the TFET based SRAM cell and benchmark its performance relative to state-of-the-art CMOS based 6T SRAM cells.","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133087608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

Effect of uniaxial tensile strain on electrical performance of amorphous IGZO TFTs and circuits on flexible Metal foils 单轴拉伸应变对非晶IGZO tft及柔性金属箔上电路电性能的影响

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551869

Shahrukh A. Khan, P. Kuo, A. Jamshidi-Roudbari, M. Hatalis

引用次数: 16

Top-contact organic transistors and complementary circuits fabricated using high-resolution silicon stencil masks 采用高分辨率硅模板掩模制造的顶接触有机晶体管和互补电路

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551894

F. Ante, F. Letzkus, J. Butschke, U. Zschieschang, J. Burghartz, Klaus Kern, H. Klauk

{"title":"Top-contact organic transistors and complementary circuits fabricated using high-resolution silicon stencil masks","authors":"F. Ante, F. Letzkus, J. Butschke, U. Zschieschang, J. Burghartz, Klaus Kern, H. Klauk","doi":"10.1109/DRC.2010.5551894","DOIUrl":"https://doi.org/10.1109/DRC.2010.5551894","url":null,"abstract":"The maximum operating frequency of a field-effect transistor is inversely proportional to its lateral dimensions. Organic thin-film transistors (TFTs) with dimensions of ∼1 µm or less have been fabricated by photolithography [1], electron-beam lithography (EBL) [2], nano-imprint lithography (NIL) [3], sub-femtoliter inkjet printing (SIJ) [4] and self-aligned inkjet printing (SAP) [5]. Some of these methods (EBL, SIJ, SAP) have small throughput, others (EBL, NIL, photolithography) involve solvents or high process temperatures. Since high-mobility small-molecule organic semiconductors often undergo phase transitions when exposed to solvents or heat [6,7], these methods are in general not suitable to pattern source and drain contacts on top of such semiconductors. As an alternative, high-resolution stencil masks offer the possibility to pattern top contacts with high throughput and without the need for solvents or elevated temperatures. For example, Jin et al. reported top-contact pentacene TFTs with a channel length of 1.8 µm fabricated by using a global silicon back gate and a high-resolution silicon nitride stencil mask [8]. For devices with short channel lengths, top-contact organic TFTs usually provide better performance than bottom-contact TFTs [9].","PeriodicalId":396875,"journal":{"name":"68th Device Research Conference","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124035378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 11

A novel multi-bit non-uniform channel charge trapping memory with virtual-source NAND array 一种基于虚拟源NAND阵列的多比特非均匀通道电荷捕获存储器

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551966

H. Gu, L. Pan, P. Zhu, D. Wu, Z. Zhang, J. Xu

引用次数: 0

Structure and doping effects in carbon heterojunction FETs towards barrier-free inter-band tunneling 碳异质结场效应管的结构和掺杂效应

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551923

Y. Yoon, S. Salahuddin

引用次数: 0

Transistors: Past, present, future, and future-er 晶体管:过去、现在、未来和未来

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551861

S. Natarajan

引用次数: 1

Experimental demonstration of fanout for Nanomagnet Logic 纳米磁体逻辑扇出的实验演示

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551852

E. Varga, S. Liu, M. Niemier, W. Porod, X.S. Hu, G. Bernstein, A. Orlov

引用次数: 26

Depletion-mode pseudomorphic In0.22Ga0.78As-channel MOSFETs with InAlP native oxide gate dielectric for RF applications 用于射频应用的InAlP原生氧化栅极电介质的耗尽模式假晶in0.22 ga0.78 as沟道mosfet

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551889

X. Xing, W. Yuan, D. Hall, P. Fay

引用次数: 0

Improve variability in carbon nanotube FETs by scaling 通过缩放改善碳纳米管场效应管的可变性

68th Device Research Conference Pub Date : 2010-06-21 DOI: 10.1109/DRC.2010.5551959

Yanning Sun, George Tuleski, Shu-Jen Han, W. Haensch, Zhihong Chen

引用次数: 1