Structure and doping effects in carbon heterojunction FETs towards barrier-free inter-band tunneling

Abstract

We have shown that it may be possible to use a CNT-GNR heterostructure to obtain a novel transistor action such that (i) at low voltage the device acts like a tunneling transistor, reducing the voltage requirement below the classical limit and (ii) at high voltages the tunnel barrier is effectively diminished, thus allowing a large drive current. Therefore, such a heterostructure may combine the best practices of both a tunneling FET and a conventional MOSFET in the same device structure and thus guide a way in designing ultra low-power carbon-based electronics.