Proceedings of Nonvolatile Memory Technology Conference最新文献_第3页

Erasure processes of magnetic memories at the microscopic level 磁记忆在微观层面的擦除过程

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534670

R. Gomez, E. R. Burke, R. Madabhushi, I. Mayergoyz

{"title":"Erasure processes of magnetic memories at the microscopic level","authors":"R. Gomez, E. R. Burke, R. Madabhushi, I. Mayergoyz","doi":"10.1109/NVMT.1996.534670","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534670","url":null,"abstract":"The microscopic erasure characteristics of the most common types of magnetic storage media have been investigated using magnetic force microscopy. The micromagnetic evolution of recorded patterns on thin film rigid disk and flexible media have been observed as a function of an applied external field, and the reduction of magneto-optic media marks has been investigated as a function of heating temperature. Specific stages of the erasure process exhibit unique characteristics for each medium. The initial erasure stages for both types of ferromagnetic media show similar behaviour and are characterized by the expansion of the favoured domains. The middle and final stage behaviours are markedly different. For the thin film case, magnetization reversal occurs by nucleation and growth while for the particulate media, reversal occurs primarily through localized cluster switching. These results were correlated with their macroscopic magnetization curves and their diverging characteristics can be attributed to their differing interparticle coupling interaction. The initial stage of erasure of magneto-optic media is accompanied by the anisotropic displacement of the domain walls which introduces shape irregularities of the original circular marks. With increase in temperature, the microdomains that comprise the individual marks become apparent as each microdomain independently diminish in size. Pinning at the mechanical grooves has been found to be mainly responsible for retarding domain collapse.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128247168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Design issues for use of flash memory devices in solid state recorders 在固态记录仪中使用闪存设备的设计问题

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534688

B. Kaufman

引用次数: 0

Flash EEPROM cells using shallow trench isolation 使用浅沟隔离的闪存EEPROM单元

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534673

B. Guillaumot, H. Achard, P. Candelier, S. Deleonibus, F. Martin

引用次数: 1

Ferroelectric nonvolatile memory technology: applications and integration challenges 铁电非易失性存储器技术:应用和集成挑战

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534687

P. Zurcher, R.E. Jones, P. Chu, D. Taylor, B. White, S. Zafar, B. Jiang, Y. Lii, S. J. Gillespie

{"title":"Ferroelectric nonvolatile memory technology: applications and integration challenges","authors":"P. Zurcher, R.E. Jones, P. Chu, D. Taylor, B. White, S. Zafar, B. Jiang, Y. Lii, S. J. Gillespie","doi":"10.1109/NVMT.1996.534687","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534687","url":null,"abstract":"Summary form only given. We discuss different integration approaches, their challenges, and problems specific to the integration of ferroelectric materials into Si-CMOS. The focus is on our ongoing integration efforts using a 1 K test vehicle with 2T/2C memory architectures in single level poly and single level metal with a 0.8 /spl mu/m front-end and a 1.2 /spl mu/m back-end. The ferroelectric capacitor module comprises Pt electrodes and a layered perovskite SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) dielectric. The capacitor module is integrated between the CMOS front-end and the metal back-end. This approach dictates processing temperatures below 900/spl deg/C during the ferroelectric module processing and below 450/spl deg/C after the metal deposition. Oxide ceramics like SET or PZT are easily damaged in plasma processes. Examples of such process damage and recovery by oxygen anneals are discussed. Progress in patterning capacitor materials is described. Finally, the post-metal anneal dilemma of not being able to perform hydrogen (i.e. forming gas) anneals for transistor recovery is discussed. Ferroelectric capacitor properties and transistor characteristics after integration are shown.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128798041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

A vision of ultra-high density memory 超高密度存储器的愿景

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534665

C. Morehouse

引用次数: 0

Holographic 3D disks 全息3D光盘

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534666

D. Psaltis, A. Pu

引用次数: 2

Nonvolatile memory requirements in a mobile computing environment 移动计算环境中的非易失性存储器需求

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534660

B. Bickford

{"title":"Nonvolatile memory requirements in a mobile computing environment","authors":"B. Bickford","doi":"10.1109/NVMT.1996.534660","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534660","url":null,"abstract":"In order to discuss the nonvolatile memory requirements of mobile systems it is first necessary to define what is meant by \"mobile computing environment\". This paper begins by distinguishing what is meant by a mobile computing environment and how this environment dictates certain design goals. It is these design goals that are driving two distinct classes of mobile computing products: handheld devices (PDAs, calculators) and mobile computers (notebooks, subnotebooks). These classes are defined in terms of the end-user model on which they are based. It is this end-user model that dictates the architectural requirements of the class. The architecture of the class certainly places demands on the system which in part are being met with nonvolatile memory. The demands that are currently being met with nonvolatile memory are explored for both of the classes of mobile systems. The paper then discusses the current state of the mobile computing environment and how the evolution of this environment will result in the erosion of the architectural differences between the two classes. As the two architectures become less delineated there will be other opportunities for nonvolatile memory. These other opportunities are explored and the role that nonvolatile memory will serve in future mobile systems is discussed.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131670201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Projected applications, status and plans for Honeywell high density, high performance, nonvolatile memory 霍尼韦尔高密度、高性能、非易失性存储器的预计应用、现状和计划

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534686

G. B. Granley, A. Hurst

引用次数: 13

Overview of the DARPA non-volatile magnetic memory program DARPA非易失性磁存储程序概述

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534659

F. Patten, S.A. Wolf

引用次数: 3

Flash memory mass storage technology tradeoffs 闪存的大容量存储技术权衡

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534682

J. F. Forella

引用次数: 1