Projected applications, status and plans for Honeywell high density, high performance, nonvolatile memory

G. B. Granley, A. Hurst
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引用次数: 13

Abstract

The foundation and basis for the Honeywell nonvolatile memory program is the proven, radiation hard, CMOS technology, combined with the proven, radiation hard, MRAM nonvolatile memory technology. These demonstrated capabilities allow the Honeywell team to focus on the most critical elements, the production release of the current AMR nonvolatile products and the development of scalable GMR storage elements capable of supporting 4 Gbit/cm/sup 2/ nonvolatile memory technology.
霍尼韦尔高密度、高性能、非易失性存储器的预计应用、现状和计划
霍尼韦尔非易失性存储器方案的基础和基础是经过验证的、辐射硬的CMOS技术,结合经过验证的、辐射硬的、MRAM非易失性存储器技术。这些展示的功能使霍尼韦尔团队能够专注于最关键的元件,当前AMR非易失性产品的生产发布以及能够支持4 Gbit/cm/sup 2/非易失性存储器技术的可扩展GMR存储元件的开发。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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