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Proceedings of Nonvolatile Memory Technology Conference最新文献

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Radiation hardened 64 K/256 K EEPROM technology 抗辐射64k / 256k EEPROM技术
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534671
D. Williams, D. Adams, R. Bishop, M. Knoll, J. Murray, R. McClintock
{"title":"Radiation hardened 64 K/256 K EEPROM technology","authors":"D. Williams, D. Adams, R. Bishop, M. Knoll, J. Murray, R. McClintock","doi":"10.1109/NVMT.1996.534671","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534671","url":null,"abstract":"This paper summarizes the status of 64 K and 256 K radiation hardened EEPROM devices that are being produced for space and strategic applications at Northrop Grumman Corporation. These devices use Silicon-Oxide-Nitride-Oxide-Semiconductor (SONOS) technology which provides improved total dose radiation hardness over floating gate devices. Circuit design techniques provide good resistance to single event and transient radiation effects. Several CMOS/SONOS devices are being produced including an 8 K/spl times/8 EEPROM, a 32 K/spl times/8 EEPROM (in development), plus mixed mode ASICs. This technology has been demonstrated to have better than 10 year retention at 80/spl deg/C after 10/sup 4/ programming cycles. The EEPROMs utilize a radiation hardened CMOS process technology currently specified at 300 Krad(Si) total dose hardness. Both n-channel and p-channel SONOS memory transistors are currently in use, but the EEPROMs are based on n-channel SONOS.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130388227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
FRAM-the ultimate memory fram——终极存储器
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534679
E. Philofsky
{"title":"FRAM-the ultimate memory","authors":"E. Philofsky","doi":"10.1109/NVMT.1996.534679","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534679","url":null,"abstract":"This paper has described a new nonvolatile technology based on utilizing the ferroelectric properties of PZT thin films. This technology has been applied to manufacture a family of low density serial and parallel memories that combine the fast reads and writes of SRAM and nonvolatility of EEPROM with very high read/write endurance. These products are shown to be superior to equivalent EEPROM products in write speed, write endurance, and overall power consumption. The failure rate of packaged parts has been shown to be less than 60 fits with a 60% confidence level for 10-year data storage at room temperature, which confirms the production worthiness of ferroelectric technology for volume applications. Future developments include high density products with better endurance and retention and the ability to work at lower voltage. As a result, FRAM technology will become the dominant nonvolatile memory technology by the end of this decade.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122952254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
The multilayer silicon nitride films as a media for charge storage in MNOS structures 多层氮化硅薄膜作为MNOS结构中电荷存储的介质
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534677
A. Evtukh, V. Litovchenko, V. Popov
{"title":"The multilayer silicon nitride films as a media for charge storage in MNOS structures","authors":"A. Evtukh, V. Litovchenko, V. Popov","doi":"10.1109/NVMT.1996.534677","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534677","url":null,"abstract":"Charge storage in multilayer silicon nitride films of MNOS structures is investigated and compared with homogeneous films. Multilayer silicon nitride films were synthesized using nonmonotonical step changing of the NH/sub 3/ to SiCl/sub 4/ ratio during deposition. The energy bandgap of Si/sub 3/N/sub 4/ and energy barrier heights for electrons and holes change appreciably, depending on the reactive component ratio. In forming the multilayer silicon nitride films we created a graded bandgap insulator with energy wells and barriers. This allows the current transport and distribution of stored charge in the insulator of MNOS structures.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131514348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
COTS for military applications: been there, done that, got the PC cards 用于军事应用的COTS:在那里，做了那个，得到了PC卡
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534663
J. Balakirsky, W. J. Hall
{"title":"COTS for military applications: been there, done that, got the PC cards","authors":"J. Balakirsky, W. J. Hall","doi":"10.1109/NVMT.1996.534663","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534663","url":null,"abstract":"OSC/FD has successfully implemented unmodified PC Cards in military equipment. These implementations have been for memory only. In one instance PC Cards are being used in a new system (Bradley Fighting Vehicle Mass Memory Unit) and in another instance PC Cards are being used to cost effectively upgrade an existing system (the PC Card upgrade to the AN/ASQ-215 Navy standard data loader). OSC/FD is working on the application of PC Cards (or Credit Electronics) beyond memory. Both retrofit and new developments are being considered. Using PC Cards, with their limited processing and interface capabilities, in a complex, multi-processor military applications is significant challenge, but one OSC/FD will achieve.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130913738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A media maniac's guide to removable mass storage media 媒体狂人的可移动大容量存储媒体指南
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534684
L. Kempster
{"title":"A media maniac's guide to removable mass storage media","authors":"L. Kempster","doi":"10.1109/NVMT.1996.534684","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534684","url":null,"abstract":"The background section of \"A Media Maniac's Answer to Where Storage Will be in 2000\" provides a rich history that applies to this paper. This paper addresses at a high level, the many individual technologies available today in the removable storage arena. It discusses recording data on removable magnetic tapes, magnetic floppies, optical disks and optical tape.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124233288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recce and UAV: mass memory an enabling technology for merger Recce和UAV:大容量存储器是实现合并的技术
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534685
W. J. Hall
{"title":"Recce and UAV: mass memory an enabling technology for merger","authors":"W. J. Hall","doi":"10.1109/NVMT.1996.534685","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534685","url":null,"abstract":"The cost of manned Recce missions, threat to loss of lives in manned missions, evolution of Unmanned Air Vehicle (UAV) technology, higher resolution sensors, smart memory systems, and autonomous detection and recognition algorithms will enhance the role of the UAV for Recce missions. OSC/FD is developing the Enhanced Recce Management System and enabling technologies for this expansion in roles. Solid state memories, and the Moving Target Indicator are core elements of these enabling technologies.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133454302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Protein-based volumetric memories 基于蛋白质的体积记忆
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534668
Jeffrey A. Stuart, Edward J. Schmidt, Anakarin Kusnetzow, Albert F. Lawrence, Q. W. Song, B. Vought, K. J. Wise, Deepak L. Singh, Robert R. Birge
{"title":"Protein-based volumetric memories","authors":"Jeffrey A. Stuart, Edward J. Schmidt, Anakarin Kusnetzow, Albert F. Lawrence, Q. W. Song, B. Vought, K. J. Wise, Deepak L. Singh, Robert R. Birge","doi":"10.1109/NVMT.1996.534668","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534668","url":null,"abstract":"The promise of new architectures and more cost-effective miniaturization has prompted interest in hybrid molecular and semiconductor computers. Nature has already optimized through serendipitous natural selection some molecules for such applications. We examine here the use of the protein bacteriorhodopsin in three-dimensional optical memories. By using a sequential one-photon process, parallel read and write processes can be carried out without disturbing data outside of the irradiated volume. We examine the architecture and the methods currently under study to enhance the relevant photophysical properties of the protein.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123902374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
The NM29A040/NM29A080 serial flash memory architecture and its application NM29A040/NM29A080串行闪存架构及其应用
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534674
K. Adkins, R. Frizzell, J. D. Lyle
{"title":"The NM29A040/NM29A080 serial flash memory architecture and its application","authors":"K. Adkins, R. Frizzell, J. D. Lyle","doi":"10.1109/NVMT.1996.534674","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534674","url":null,"abstract":"This paper describes the 4 and 8 Mbit serial flash memory devices developed by National Semiconductor. The serial flash architecture evolved from a need to store and retrieve large amounts of data in a simple, straightforward manner. The four-wire MicroWire/sup TM/ interface used by this device makes the serial flash an ideal memory solution for systems with modest performance requirements. Examples of applications that can take advantage of the serial flash architecture include voice recording, fax and data storage, data logging, and more. This paper first discusses some of the market and system requirements that led to the development of the serial flash. Then the architecture is described in detail. Finally, the paper presents some specific applications for which the serial flash is well suited.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123346812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Future projections and capabilities of GMR NV memory GMR NV存储器的未来预测和能力
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534681
A.V. Pohm, B. A. Everitt, R. Beech, J. Daughton
{"title":"Future projections and capabilities of GMR NV memory","authors":"A.V. Pohm, B. A. Everitt, R. Beech, J. Daughton","doi":"10.1109/NVMT.1996.534681","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534681","url":null,"abstract":"Sub-micron memory elements made from sandwich and multilayer GMR material have been studied experimentally and analytically. The studies show that these elements are capable of fast read and write, do not exhibit wear out, have high densities for a given lithography, require few masks, and are very compatible with CMOS technology. Analysis shows that several high performance sub-micron modes of operation are possible. Experimentally, 0.2 micron wide cells were made which exhibited a memory mode with large outputs of /spl plusmn/8%. Analysis shows that this mode is suitable for multi-megabit die with high performance if yield can be achieved.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126089918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
3D optical memory devices. System and materials characteristics 三维光存储设备。系统及材料特性
Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI: 10.1109/NVMT.1996.534667
A. Dvornikov, P. Rentzepis
{"title":"3D optical memory devices. System and materials characteristics","authors":"A. Dvornikov, P. Rentzepis","doi":"10.1109/NVMT.1996.534667","DOIUrl":"https://doi.org/10.1109/NVMT.1996.534667","url":null,"abstract":"Organic photochromic materials have been dispersed in transparent polymer matrices, which upon excitation with two photons allow for storing and accessing information in 3D. The writing and accessing of the information has been performed either bit by bit or in a 2D multibit plane format. Material and system characteristics are studied and are discussed in some detail.","PeriodicalId":391958,"journal":{"name":"Proceedings of Nonvolatile Memory Technology Conference","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131133440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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