FRAM-the ultimate memory

Abstract

This paper has described a new nonvolatile technology based on utilizing the ferroelectric properties of PZT thin films. This technology has been applied to manufacture a family of low density serial and parallel memories that combine the fast reads and writes of SRAM and nonvolatility of EEPROM with very high read/write endurance. These products are shown to be superior to equivalent EEPROM products in write speed, write endurance, and overall power consumption. The failure rate of packaged parts has been shown to be less than 60 fits with a 60% confidence level for 10-year data storage at room temperature, which confirms the production worthiness of ferroelectric technology for volume applications. Future developments include high density products with better endurance and retention and the ability to work at lower voltage. As a result, FRAM technology will become the dominant nonvolatile memory technology by the end of this decade.