Future projections and capabilities of GMR NV memory

Abstract

Sub-micron memory elements made from sandwich and multilayer GMR material have been studied experimentally and analytically. The studies show that these elements are capable of fast read and write, do not exhibit wear out, have high densities for a given lithography, require few masks, and are very compatible with CMOS technology. Analysis shows that several high performance sub-micron modes of operation are possible. Experimentally, 0.2 micron wide cells were made which exhibited a memory mode with large outputs of /spl plusmn/8%. Analysis shows that this mode is suitable for multi-megabit die with high performance if yield can be achieved.