Overview of the DARPA non-volatile magnetic memory program

Abstract

This paper will describe a very new program at DARPA that has as one of its major goals the development of nonvolatile magnetic random access memory that has the potential to be radiation hard, very dense (comparable to DRAM) and very fast (comparable to SRAM). This memory will utilize spin polarized transport through multilayers, either taking advantage of the Giant Magneto-Resistive Effect (GMR), the Spin Valve Effect (SV) or Spin Tunneling (ST).