DARPA非易失性磁存储程序概述

Proceedings of Nonvolatile Memory Technology Conference Pub Date : 1996-06-24 DOI:10.1109/NVMT.1996.534659

F. Patten, S.A. Wolf

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引用次数: 3

摘要

本文将介绍DARPA的一个非常新的项目，其主要目标之一是开发非易失性磁随机存取存储器，该存储器具有辐射硬、非常密集(与DRAM相当)和非常快(与SRAM相当)的潜力。这种存储器将利用多层自旋极化输运，利用巨磁阻效应(GMR)、自旋阀效应(SV)或自旋隧道效应(ST)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Overview of the DARPA non-volatile magnetic memory program

This paper will describe a very new program at DARPA that has as one of its major goals the development of nonvolatile magnetic random access memory that has the potential to be radiation hard, very dense (comparable to DRAM) and very fast (comparable to SRAM). This memory will utilize spin polarized transport through multilayers, either taking advantage of the Giant Magneto-Resistive Effect (GMR), the Spin Valve Effect (SV) or Spin Tunneling (ST).

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Proceedings of Nonvolatile Memory Technology Conference

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