Materials Letters最新文献_第6页

Production of chitosan from Agaricus bisporus and its application in the removal of Pb (II) and Cd (II) ions 双孢蘑菇壳聚糖的制备及其在去除Pb （II）和Cd （II）离子中的应用

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-30 DOI: 10.1016/j.matlet.2025.139586

Julio Silva-Mendoza , José Enrique Valdez-Cerda , Cristhian Jiménez-Argüelles , Edgar Allan Blanco-Gámez , Leonardo Chávez-Guerrero

{"title":"Production of chitosan from Agaricus bisporus and its application in the removal of Pb (II) and Cd (II) ions","authors":"Julio Silva-Mendoza , José Enrique Valdez-Cerda , Cristhian Jiménez-Argüelles , Edgar Allan Blanco-Gámez , Leonardo Chávez-Guerrero","doi":"10.1016/j.matlet.2025.139586","DOIUrl":"10.1016/j.matlet.2025.139586","url":null,"abstract":"<div><div>The contamination of water systems by heavy metals such as lead and cadmium represents serious environmental and health concern, requiring efficient, low-cost, and eco-friendly treatment alternatives. Chitosan, a biopolymer obtained from chitin, is a promising adsorbent due to its chemical functionality and biodegradability. In this work, chitosan was extracted from <em>Agaricus bisporus</em> stipes through oxidative and alkaline treatment, and its structure was confirmed by SEM and FTIR analyses. SEM images revealed a lamellar–fibrillar surface favorable for adsorption, while FTIR spectra indicated the successful deacetylation of chitin to chitosan. Biosorption experiments were performed to evaluate the removal efficiency of Pb (II) and Cd (II) under different parameters: pH (4–8), initial ion concentration (Pb: 20 ppm, Cd: 2 ppm), and contact time (0−12<em>h</em>). Results demonstrated that Pb (II) adsorption reached more than 88 % at pH 4, whereas Cd (II) removal was higher under alkaline conditions (≈77 % at pH 8), evidencing the strong influence of solution pH. These results highlight the potential of mushroom-derived chitosan for sustainable wastewater treatment technologies.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"404 ","pages":"Article 139586"},"PeriodicalIF":2.7,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145264468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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High-performance self-powered flexible photodetectors based on Sb₂Te₃/Te heterojunction nanostructures 基于Sb₂Te₃/Te异质结纳米结构的高性能自供电柔性光电探测器

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-30 DOI: 10.1016/j.matlet.2025.139593

Jiayin Wang , Kefei Cheng , Chuangjian Li , Fan Wang , Xianghan Ye , Kaijia Xu , Yinyin Qian

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Design of a low-permittivity silicate garnet Ca3Ni2SiV2O12 with reduced sintering temperature 降低烧结温度的低介电常数硅酸盐石榴石Ca3Ni2SiV2O12的设计

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-30 DOI: 10.1016/j.matlet.2025.139594

Yang li, Xueling Hu, Yanjun Liu, Zejun Jiang

{"title":"Design of a low-permittivity silicate garnet Ca3Ni2SiV2O12 with reduced sintering temperature","authors":"Yang li, Xueling Hu, Yanjun Liu, Zejun Jiang","doi":"10.1016/j.matlet.2025.139594","DOIUrl":"10.1016/j.matlet.2025.139594","url":null,"abstract":"<div><div>A novel garnet composition, Ca<sub>3</sub>Ni<sub>2</sub>SiV<sub>2</sub>O<sub>12</sub>, was designed by incorporating both Si and V into the tetrahedral sites. The ceramics were synthesized via the conventional solid-state reaction method and sintered between 1080 and 1160 °C. X-ray diffraction and Rietveld refinement confirmed the formation of a pure cubic garnet phase (space group <em>Ia-3d</em>) across all temperatures. Microstructural analysis revealed that densification and grain growth improved with increasing sintering temperature. Optimal microwave dielectric properties were achieved at 1140 °C: a dielectric constant (<em>ε</em>ᵣ) of 8.2, a <em>Q</em> × <em>f</em> value of 21,960 GHz, and a temperature coefficient of resonant frequency (τ<sub><em>f</em></sub>) of approximately −45 ppm/°C. These results demonstrate that the strategic co-substitution of Si and V effectively lowers the sintering temperature while maintaining commendable dielectric performance, making Ca<sub>3</sub>Ni<sub>2</sub>SiV<sub>2</sub>O<sub>12</sub> a potential material for low-permittivity applications.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"404 ","pages":"Article 139594"},"PeriodicalIF":2.7,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145227827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Spherical cellular aluminum foam with enhanced interconnectivity: Enabled by modified NaCl template 具有增强互联性的球形泡沫铝：通过修改的NaCl模板实现

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-30 DOI: 10.1016/j.matlet.2025.139589

Gaozhi Jia , Hua Huang , Ke Zhang , Zhenjiu Zhang , Jinjin Wang , Lichao Zhang , Mingjun Liu , Guangyin Yuan

引用次数: 0

Tuning the magnetic ground state of CuCrO2 by Ge substitution 用Ge取代调整CuCrO2的磁性基态

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-29 DOI: 10.1016/j.matlet.2025.139574

Phantira Rattanathrum , Teerasak Kamwanna

{"title":"Tuning the magnetic ground state of CuCrO2 by Ge substitution","authors":"Phantira Rattanathrum , Teerasak Kamwanna","doi":"10.1016/j.matlet.2025.139574","DOIUrl":"10.1016/j.matlet.2025.139574","url":null,"abstract":"<div><div>Polycrystalline CuCr<sub>0.95</sub>Ge<sub>0.05</sub>O<sub>2</sub> was synthesized by a conventional solid-state reaction. X-ray diffraction confirmed the rhombohedral delafossite structure (R–3m). The refined lattice parameters are nearly identical to standard values, indicating Ge incorporation with minor distortion. Scanning electron microscopy (SEM) revealed hexagonal-like grains averaging of 3.6 ± 0.9 μm. Magnetic characterization showed weak ferromagnetism at low temperatures and paramagnetism at room temperature. Zero-field-cooled susceptibility identified a Curie temperature (<em>T</em><sub>C</sub>) of 139.3 ± 0.4 K, and Curie–Weiss fitting yielded a Curie constant (<em>C</em> = 1.425 ± 0.002), a Curie–Weiss temperature (Θ = −138.8 ± 0.4 K), and an effective magnetic moment (<em>μ</em><sub>eff</sub> = 3.37 μ<sub>B</sub>), consistent with the Cr<sup>3+</sup> sublattice. Additional field-dependent magnetization (<em>M</em>–<em>H</em>) loops near <em>T</em><sub>C</sub> revealed hysteresis in the 110–135 K range, with coercivity decreasing nearly linearly with temperature. Extrapolation yielded <em>T</em><sub>C</sub> = 139.8 ± 3.6 K, consistent with susceptibility results. These findings demonstrate that Ge substitution preserves the delafossite structure of CuCrO<sub>2</sub> while inducing weak ferromagnetic ordering, offering a route to tune the magnetic ground state.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"404 ","pages":"Article 139574"},"PeriodicalIF":2.7,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145227840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Robust filament formation via defect engineering in Mn: SrTiO3 for oxygen vacancy driven RRAM device 通过缺陷工程在Mn: SrTiO3中形成氧空位驱动RRAM器件的坚固灯丝

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-29 DOI: 10.1016/j.matlet.2025.139571

Durairaj Murugan , Gowtham Velpandi , Ranjith Ramadurai

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Combined experimental and DFT analysis of initial adsorption behavior in HfZrO2 thin films on TiN surface 结合实验和DFT分析HfZrO2薄膜在TiN表面的初始吸附行为

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-28 DOI: 10.1016/j.matlet.2025.139581

Jeong Hyeon Park , Jenam Kim , Hansol Oh , Yongjoo Park , Woojin Jeon

引用次数: 0

Electrical-optical dual-modulated synaptic memristor based on thermal evaporated Sb2S3 thin film 基于热蒸发Sb2S3薄膜的电光双调制突触忆阻器

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-28 DOI: 10.1016/j.matlet.2025.139582

Junjie Zeng, Qinglian Liu, Hao Sun, Xiangdong Meng, Ruijin Hu, Shaobo Zhang

{"title":"Electrical-optical dual-modulated synaptic memristor based on thermal evaporated Sb2S3 thin film","authors":"Junjie Zeng, Qinglian Liu, Hao Sun, Xiangdong Meng, Ruijin Hu, Shaobo Zhang","doi":"10.1016/j.matlet.2025.139582","DOIUrl":"10.1016/j.matlet.2025.139582","url":null,"abstract":"<div><div>The optoelectronic memristors (OMs), capable of simultaneous response to electrical and optical stimuli, have emerged as promising components for constructing neuromorphic computing and artificial visual systems. To pursue such devices, novel materials with stable electrical properties and a suitable bandgap responsive to the visible light spectrum are in urgent demand. Antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>) shows great potential considering its excellent stability, earth-abundance, high light absorption coefficients, and optimal bandgap of ∼1.7 eV. Here, we report OMs based on the Sb<sub>2</sub>S<sub>3</sub> thin film deposited via the industrially compatible thermal evaporation technique. With an FTO/ Sb<sub>2</sub>S<sub>3</sub>/Ag structure, the devices demonstrate reliable resistive switching and robust endurance. Typical synaptic functions, such as the excitatory postsynaptic current (EPSC) and paired-pulse facilitation (PPF) characteristics, are successfully mimicked. These results highlight the significant potential of integrating Sb<sub>2</sub>S<sub>3</sub> OMs into artificial intelligence hardware.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"404 ","pages":"Article 139582"},"PeriodicalIF":2.7,"publicationDate":"2025-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145227830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Tailoring the corrosion behavior of hot-pressed aluminium-CeO2 composites 调整热压铝- ceo2复合材料的腐蚀行为

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-27 DOI: 10.1016/j.matlet.2025.139576

Burçin Özbay Kısasöz , Mahmut Erol , Yahya Bayrak , Alptekin Kısasöz

引用次数: 0

Effect of Sn concentration on antimony oxide thin films via using spin coating method: Analysis of structural and optical properties Sn浓度对自旋镀膜法氧化锑薄膜的影响：结构和光学性质分析

IF 2.7 4区材料科学

Materials Letters Pub Date : 2025-09-27 DOI: 10.1016/j.matlet.2025.139579

Patsorn Boon-on , Phathaitep Raksa , Witawat Ponhan , Panupat Chaiworn , Auttasit Tubtimtae

{"title":"Effect of Sn concentration on antimony oxide thin films via using spin coating method: Analysis of structural and optical properties","authors":"Patsorn Boon-on , Phathaitep Raksa , Witawat Ponhan , Panupat Chaiworn , Auttasit Tubtimtae","doi":"10.1016/j.matlet.2025.139579","DOIUrl":"10.1016/j.matlet.2025.139579","url":null,"abstract":"<div><div>The synthesis of Sn-doped Sb<sub>2</sub>O<sub>3</sub> thin films using the spin coating method aims to investigate the effect of various Sn concentrations on the optical and structural properties, which has not been previously reported. FESEM revealed some hexagonal and cubic-shaped structures on the surfaces with thicknesses ranging from 6 to 13 μm. EDS confirmed successful Sn doping in the Sb<sub>2</sub>O<sub>3</sub> lattice, and XRD patterns identified a cubic Sb<sub>2</sub>O<sub>3</sub> phase for 0.1 M Sn and became to an amorphous nature for 0.2 M Sn. The structure transformed to orthorhombic from 0.3 to 0.5 M Sn. The structural properties show that the 0.3 M Sn doping exhibits minimal structural defects and disorder. In addition, the films exhibited almost 90 % transmittance in the visible region and dramatical reduction in the ultraviolet region. The 0.3 M Sn doping exhibited high absorption coefficients with the lowest Urbach energy and optimal bandgap. These findings highlight the need for high-quality optical thin films fabricated using the spin-coating method.</div></div>","PeriodicalId":384,"journal":{"name":"Materials Letters","volume":"404 ","pages":"Article 139579"},"PeriodicalIF":2.7,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145189666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0