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CAS 2010 Proceedings (International Semiconductor Conference)最新文献

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Study of dielectric behavior of aromatic polyimide films 芳香族聚酰亚胺薄膜介电性能的研究
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650686
S. Chisca, V. Musteata, I. Sava, M. Brumǎ
{"title":"Study of dielectric behavior of aromatic polyimide films","authors":"S. Chisca, V. Musteata, I. Sava, M. Brumǎ","doi":"10.1109/SMICND.2010.5650686","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650686","url":null,"abstract":"Aromatic polyimide films were prepared and their dielectric constant and relaxation behavior were studied. Polyimide films have good insulating properties with dielectric constant values in the range of 2.88 – 3.48 at 1Hz and room temperature. Three relaxation processes (γ, β<inf>1</inf> and β<inf>2</inf>) at sub-glass temperatures were observed and investigated. The cooperativity of the molecular motions associated with the relaxation processes was discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"11 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116821345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Emission efficiency of crystalline and amorphous Si nanoclusters 晶体和非晶硅纳米团簇的发射效率
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650229
T. V. Torchynska
{"title":"Emission efficiency of crystalline and amorphous Si nanoclusters","authors":"T. V. Torchynska","doi":"10.1109/SMICND.2010.5650229","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650229","url":null,"abstract":"The paper presents the results of emission efficiency comparison in crystalline and amorphous Si nanoclustes. Using X-ray diffraction (XRD) and photoluminescence (PL) methods the correlation between different PL bands and the volumes of Si nanocrystals and an amorphous (a-Si:H) phase have been revealed The size parameters of amorphous (a-Si:H) nanoclusters (quantum dots) and Si nanocrystals have been estimated from PL study and have been compared in the last case with that obtained by the XRD method. Using PL results the ratio between emission efficiencies for crystalline (ηcr) and amorphous (ηam) nanoclusters has been obtained and discussed.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117005992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of preparation method on structural properties of GeSiO nanosystems 制备方法对GeSiO纳米体系结构性能的影响
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650255
I. Stavarache, A. Lepadatu, V. Teodorescu, T. Stoica, I. Pasuk, G. Stan, V. Iancu, M. Ciurea
{"title":"Influence of preparation method on structural properties of GeSiO nanosystems","authors":"I. Stavarache, A. Lepadatu, V. Teodorescu, T. Stoica, I. Pasuk, G. Stan, V. Iancu, M. Ciurea","doi":"10.1109/SMICND.2010.5650255","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650255","url":null,"abstract":"GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117273772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Savage16 - 16-bit RISC architecture general purpose microprocessor Savage16 - 16位RISC架构通用微处理器
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650480
A. Gheorghe, C. Burileanu
{"title":"Savage16 - 16-bit RISC architecture general purpose microprocessor","authors":"A. Gheorghe, C. Burileanu","doi":"10.1109/SMICND.2010.5650480","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650480","url":null,"abstract":"This paper describes the architecture and the internal structure of “Savage16”, a fully functional general purpose reduced instruction set microprocessor, with a modified Harvard, five stage pipeline architecture. The memory organization and key architecture elements are being described, as well as the hardware block diagram and the internal structure. A summary of the instruction set is presented, along with a brief description of the addressing modes.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"248 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122077029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
An industrial temperature probe based on SiC diodes 一种基于SiC二极管的工业温度探头
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650596
F. Draghici, M. Badila, G. Brezeanu, I. Rusu, F. Craciunoiu, I. Enache
{"title":"An industrial temperature probe based on SiC diodes","authors":"F. Draghici, M. Badila, G. Brezeanu, I. Rusu, F. Craciunoiu, I. Enache","doi":"10.1109/SMICND.2010.5650596","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650596","url":null,"abstract":"A temperature probe based on 4H-SiC Schottky diodes is proposed. These diodes have been fabricated and characterized for temperature sensor applications. A conversion circuit to 4–20mA output current for ambient to maximum (400°C) input temperature was designed and tested.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125570929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Grating light valve based on high reflectance micro-beams: Design by simulation 基于高反射率微光束的光栅光阀:仿真设计
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650239
C. Florin, C. Tibeica, M. Purica, P. Schiopu
{"title":"Grating light valve based on high reflectance micro-beams: Design by simulation","authors":"C. Florin, C. Tibeica, M. Purica, P. Schiopu","doi":"10.1109/SMICND.2010.5650239","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650239","url":null,"abstract":"In this paper are presented the results of grating light valve (GLV) structure simulation using Coventorware software in order to maximize the intensity of diffracted light in the ±1 diffraction orders. Was simulated a GLV element which consists from 6 high reflective micro-beams suspended above a silicon substrate and which are ellectrostatically actuated. By simulation are optimized the length, width and thicknesses of the micro-beam and the space between micro-beams to obtaining a deflection of »/4 at moderate value of applied voltage.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126746895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Self consistent parameterized physical MTJ compact model for STT-RAM STT-RAM的自一致参数化物理MTJ紧凑模型
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650558
Anurag Nigam, K. Munira, Avik W. Ghosh, Stu Wolf, E. Chen, M. Stan
{"title":"Self consistent parameterized physical MTJ compact model for STT-RAM","authors":"Anurag Nigam, K. Munira, Avik W. Ghosh, Stu Wolf, E. Chen, M. Stan","doi":"10.1109/SMICND.2010.5650558","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650558","url":null,"abstract":"We present a physical compact model for magnetic tunnel junction (MTJ). Landau-Lifshitz-Gilbert (LLG) differential equation is solved in SPICE to derive the transient characteristics of MTJ. A modified version of the Simmons tunnel current equation captures the steady state properties of MTJ. The model results are validated with published experimental data.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114607311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Synthesis and characterization of nickel cobalt oxide thin films 镍钴氧化物薄膜的合成与表征
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650627
G. Calin, M. Irimia, C. Scarlat, M. Purica, F. Comanescu, F. Iacomi
{"title":"Synthesis and characterization of nickel cobalt oxide thin films","authors":"G. Calin, M. Irimia, C. Scarlat, M. Purica, F. Comanescu, F. Iacomi","doi":"10.1109/SMICND.2010.5650627","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650627","url":null,"abstract":"p-Type transparent and conductive cobalt-nickel oxide films of 130 nm thickness, have been deposited by spin coating method on glass substrates. The electrical and optical properties of the oxides have been studied as a function of the x=Co/(Co+Ni) ratio. A combination of x-ray diffraction, x-ray photoelectron spectroscopy and Raman spectroscopy was used in order to investigate thin film structures. Thin films of mixed oxides: NiCo2O4, Ni1.71 Co1.29 O4; NiO were obtained for x>0.60. The electrical conductivity of these films reaches a maximum conductivity at this stoichiometry.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116588190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Dielectric properties of thin polyimide films 聚酰亚胺薄膜的介电性能
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5650658
R. Rusu, M. Damaceanu, M. Brumǎ, A. Muller
{"title":"Dielectric properties of thin polyimide films","authors":"R. Rusu, M. Damaceanu, M. Brumǎ, A. Muller","doi":"10.1109/SMICND.2010.5650658","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5650658","url":null,"abstract":"Heterocyclic polyimides based on bis (ketonaphthalic) dianhydrides and aromatic diamines containing oxadiazole rings were prepared and their dielectric properties were investigated. The dielectric constant values, measured at room temperature and in the frequency domain of 1 Hz-1MHz, were in the range of 2.7–3.1, being lower or comparable with those of commercial polyimide film Kapton which is one of the most used dielectric materials in microelectronic applications. The dielectric loss values are also low, in the same range with those of Kapton.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116669744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Two axes detector for photovoltaic panels' automatic full angle orientation 用于光伏板自动全角度定位的两轴检测仪
CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI: 10.1109/SMICND.2010.5649035
L. Milea, M. Dascalu, O. Oltu, A. Zafiu
{"title":"Two axes detector for photovoltaic panels' automatic full angle orientation","authors":"L. Milea, M. Dascalu, O. Oltu, A. Zafiu","doi":"10.1109/SMICND.2010.5649035","DOIUrl":"https://doi.org/10.1109/SMICND.2010.5649035","url":null,"abstract":"A significant efficiency increase of the photovoltaic systems can be obtained by optimal exposure to the sunlight, using automatic solar trackers. In this paper we propose a detector for one or two axis automatic orientation, which permit a continuous tracking for the entire zenith angle range. The detector has a monotonous and almost linear characteristic for incident angles from −90° to 90°, on any axe. It is appropriate for an analog, low cost, tracking procedure, but also for a digital, more precise one. The West to East return procedure is simple, because of the illumination of at least one cell.","PeriodicalId":377326,"journal":{"name":"CAS 2010 Proceedings (International Semiconductor Conference)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125864233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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