An industrial temperature probe based on SiC diodes

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650596

F. Draghici, M. Badila, G. Brezeanu, I. Rusu, F. Craciunoiu, I. Enache

引用次数: 11

Abstract

A temperature probe based on 4H-SiC Schottky diodes is proposed. These diodes have been fabricated and characterized for temperature sensor applications. A conversion circuit to 4–20mA output current for ambient to maximum (400°C) input temperature was designed and tested.

查看原文本刊更多论文

一种基于SiC二极管的工业温度探头

提出了一种基于4H-SiC肖特基二极管的温度探头。这些二极管已被制造和表征温度传感器的应用。设计并测试了环境至最高(400°C)输入温度下4-20mA输出电流的转换电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

CAS 2010 Proceedings (International Semiconductor Conference)

自引率

0.00%

发文量