STT-RAM的自一致参数化物理MTJ紧凑模型

CAS 2010 Proceedings (International Semiconductor Conference) Pub Date : 2010-12-03 DOI:10.1109/SMICND.2010.5650558

Anurag Nigam, K. Munira, Avik W. Ghosh, Stu Wolf, E. Chen, M. Stan

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引用次数: 13

摘要

提出了磁隧道结(MTJ)的物理紧凑模型。在SPICE中求解Landau-Lifshitz-Gilbert (LLG)微分方程，得到了MTJ的瞬态特性。西蒙斯隧道电流方程的一个修正版本捕捉了MTJ的稳态特性。用已发表的实验数据对模型结果进行了验证。

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Self consistent parameterized physical MTJ compact model for STT-RAM

We present a physical compact model for magnetic tunnel junction (MTJ). Landau-Lifshitz-Gilbert (LLG) differential equation is solved in SPICE to derive the transient characteristics of MTJ. A modified version of the Simmons tunnel current equation captures the steady state properties of MTJ. The model results are validated with published experimental data.

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CAS 2010 Proceedings (International Semiconductor Conference)

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