2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)最新文献

Fault-tolerant approaches based on evolvable hardware and using a reconfigurable electronic devices 基于可进化硬件和可重构电子设备的容错方法

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911896

D. Keymeulen, A. Stoica, R. Zebulum, Y. Jin, V. Duong

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引用次数: 7

Implementation of short-time classical HC stresses for in-line reliability control of sub-0.5 /spl mu/m nMOSFETs 实现短时经典HC应力对低于0.5 /spl mu/m的nmosfet在线可靠性控制

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911925

R. Gonella

引用次数: 0

A novel electrical test to differentiate gate-to-source/drain silicide short from gate oxide short 一种区分栅极到源极/漏极硅化物短路和栅极氧化物短路的新型电气测试方法

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911907

A. Yassine, K. Wieczorek, K. Olasupo, V. Heinig

引用次数: 3

Deep-censoring method for early reliability assessment 早期可靠性评估的深度审查方法

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911890

H. Schafft, L. Head, J. Lechner, J. Gill, T. Sullivan

引用次数: 4

An improved substrate current model for deep submicron CMOS transistors 一种改进的深亚微米CMOS晶体管衬底电流模型

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911924

Wei Li, J. Yuan, S. Chetlur, J. Zhou, A. Oates

引用次数: 0

Reliability issues of ultra-thick gate oxides 超厚栅极氧化物的可靠性问题

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911923

U. Schwalke, M. Polzl, T. Sekinger, M. Kerber

引用次数: 1

Electromigration discussion group summary moderators 电迁移讨论组总结版主

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911916

H. Schafft, T. Sullivan

引用次数: 0

Comparison of two standard WLR current-ramped tests for oxide reliability 两种标准WLR电流斜坡试验氧化物可靠性的比较

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911936

B. Lanchava, P. Baumgartner, A. Martin, A. Beyer, E. Mueller

引用次数: 1

Characterization of extrusion formation during high temperature anneal 高温退火过程中挤压成形的表征

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911929

J. Kelsey-Wynne, F. Chen, J. Furukawa, T. Sullivan

引用次数: 1

Quasi-breakdown in ultra-thin oxides: some insights on the physical mechanisms 超薄氧化物的准击穿:关于物理机制的一些见解

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI: 10.1109/IRWS.2000.911898

S. Bruyère, D. Roy, E. Vincent, G. Ghibaudo

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引用次数: 1