实现短时经典HC应力对低于0.5 /spl mu/m的nmosfet在线可靠性控制

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI:10.1109/IRWS.2000.911925

R. Gonella

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引用次数: 0

摘要

本文的目的是表明在先进的0.5 /spl mu/m以下的技术中，短时经典热载流子(HC)压力测试适用于预测在线监测。这些测试在检测异常批次方面的能力，以及与已经提出的快速方法性能的比较，使人们认为这种方法对于晶圆级可靠性控制(WLRC)的目的非常有吸引力。

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Implementation of short-time classical HC stresses for in-line reliability control of sub-0.5 /spl mu/m nMOSFETs

The purpose of this paper is to show that in advanced sub-0.5 /spl mu/m technologies, short-time classical hot-carrier (HC) stress tests are suitable for a predictive in-line monitoring. The ability of such tests in detecting maverick lots and the comparison with the performances of an already proposed fast method, lead to consider this approach as very attractive for wafer-level reliability control (WLRC) purposes.

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来源期刊

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)

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