一种改进的深亚微米CMOS晶体管衬底电流模型

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI:10.1109/IRWS.2000.911924

Wei Li, J. Yuan, S. Chetlur, J. Zhou, A. Oates

{"title":"一种改进的深亚微米CMOS晶体管衬底电流模型","authors":"Wei Li, J. Yuan, S. Chetlur, J. Zhou, A. Oates","doi":"10.1109/IRWS.2000.911924","DOIUrl":null,"url":null,"abstract":"A simple and accurate substrate current model was developed by modifying the model of ionization characteristic length and tested for both n-channel and p-channel devices against the measurement data. It shows a better match by comparing with other models reported in the literature. The model has been used to simulate the transient substrate current in circuit operating conditions to show its ability to predict the device and circuit lifetime.","PeriodicalId":374889,"journal":{"name":"2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An improved substrate current model for deep submicron CMOS transistors\",\"authors\":\"Wei Li, J. Yuan, S. Chetlur, J. Zhou, A. Oates\",\"doi\":\"10.1109/IRWS.2000.911924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple and accurate substrate current model was developed by modifying the model of ionization characteristic length and tested for both n-channel and p-channel devices against the measurement data. It shows a better match by comparing with other models reported in the literature. The model has been used to simulate the transient substrate current in circuit operating conditions to show its ability to predict the device and circuit lifetime.\",\"PeriodicalId\":374889,\"journal\":{\"name\":\"2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2000.911924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2000.911924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过修正电离特性长度模型，建立了一个简单准确的衬底电流模型，并根据测量数据对n通道和p通道器件进行了测试。通过与文献中其他模型的比较，该模型具有较好的匹配性。该模型已被用于模拟电路工作条件下的瞬态衬底电流，以显示其预测器件和电路寿命的能力。

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An improved substrate current model for deep submicron CMOS transistors

A simple and accurate substrate current model was developed by modifying the model of ionization characteristic length and tested for both n-channel and p-channel devices against the measurement data. It shows a better match by comparing with other models reported in the literature. The model has been used to simulate the transient substrate current in circuit operating conditions to show its ability to predict the device and circuit lifetime.

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来源期刊

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)

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