超厚栅极氧化物的可靠性问题

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) Pub Date : 2000-10-23 DOI:10.1109/IRWS.2000.911923

U. Schwalke, M. Polzl, T. Sekinger, M. Kerber

{"title":"超厚栅极氧化物的可靠性问题","authors":"U. Schwalke, M. Polzl, T. Sekinger, M. Kerber","doi":"10.1109/IRWS.2000.911923","DOIUrl":null,"url":null,"abstract":"In this work, degradation and breakdown characteristics of ultra-thick gate oxides (Tox: 50 nm-120 nm) used in power MOS devices is investigated. Measurements indicate, that the established thin-oxide models for lifetime extrapolations from accelerated tests may not be appropriate for ultra-thick oxides and lead to erroneous results.","PeriodicalId":374889,"journal":{"name":"2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Reliability issues of ultra-thick gate oxides\",\"authors\":\"U. Schwalke, M. Polzl, T. Sekinger, M. Kerber\",\"doi\":\"10.1109/IRWS.2000.911923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, degradation and breakdown characteristics of ultra-thick gate oxides (Tox: 50 nm-120 nm) used in power MOS devices is investigated. Measurements indicate, that the established thin-oxide models for lifetime extrapolations from accelerated tests may not be appropriate for ultra-thick oxides and lead to erroneous results.\",\"PeriodicalId\":374889,\"journal\":{\"name\":\"2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2000.911923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2000.911923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文研究了用于功率MOS器件的超厚栅极氧化物(Tox: 50 nm-120 nm)的降解和击穿特性。测量结果表明，建立的用于加速试验寿命外推的薄氧化物模型可能不适用于超厚氧化物，并导致错误的结果。

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Reliability issues of ultra-thick gate oxides

In this work, degradation and breakdown characteristics of ultra-thick gate oxides (Tox: 50 nm-120 nm) used in power MOS devices is investigated. Measurements indicate, that the established thin-oxide models for lifetime extrapolations from accelerated tests may not be appropriate for ultra-thick oxides and lead to erroneous results.

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2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)

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