19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)最新文献_第3页

Numerical basis and validation of CAD-centric CFD: Honeycomb heatsink study 以cad为中心的CFD数值基础与验证:蜂窝散热器研究

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675222

Travis Mikjaniec, Paul R. Blais, J. Parry

引用次数: 0

Combined method for thermal characterization of high power semiconductors 高功率半导体热特性的组合方法

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675183

E. Merten, M. A. Ras, T. von Essen, R. Schacht, D. May, T. Winkler, B. Michel

引用次数: 0

The nondestructive thermoacoustic method of determination of the air-tightness of metal packagings of transistors 非破坏性热声法测定晶体管金属封装气密性

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675240

M. Kubicki, Miroslaw Malmski

引用次数: 2

Generation of electro-thermal models of integrated power electronics modules using a novel synthesis technique 利用一种新的合成技术生成集成电力电子模块的电热模型

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675200

G. Greco, Giovanni Vinci, A. Raciti, D. Cristaldi

{"title":"Generation of electro-thermal models of integrated power electronics modules using a novel synthesis technique","authors":"G. Greco, Giovanni Vinci, A. Raciti, D. Cristaldi","doi":"10.1109/THERMINIC.2013.6675200","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675200","url":null,"abstract":"In recent years, the development of electronic systems that make use of high-rate power circuitry is increasingly frequent also for markets going beyond the typical industrial sector. So, the implementation of efficient electronic modules aimed at converting power, in ambits such as renewable energy equipment or hybrid-electric vehicle motor drives, represents a new challenge for designers. Often, the amount of power to be managed is very significant and no rarely it exceeds tens of kW. In this context, new concepts for manufacturing power converters are emerging and Integrated Power Electronics Modules (IPEM) represent a solution which guarantees better performances. The design of applications exploiting IPEM concept requires multi-domains simulation models able to predict the thermal behaviour of the module according to its electrical performances. In this work, a new methodology aimed at automatizing the synthesis of PSpice-like models able to reproduce both electrical and thermal dynamics is discussed. The model, generated by starting with a series of data retrieved by FEM simulations, exploits a mapping between electrical and thermal quantities and allows reproducing the characteristics of the module in a pure PSpice simulation environment. After a description of the electro-thermal model and the related developed EDA synthesis environment, a series of simulation issues are discussed.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124708448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Stress impact of thermal-mechanical loads measured with the stress chip 用应力芯片测量热机械载荷的应力影响

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675235

F. Schindler-Saefkow, F. Rost, A. Otto, J. Keller, T. Winkler, B. Wunderle, B. Michel, S. Rzepka

{"title":"Stress impact of thermal-mechanical loads measured with the stress chip","authors":"F. Schindler-Saefkow, F. Rost, A. Otto, J. Keller, T. Winkler, B. Wunderle, B. Michel, S. Rzepka","doi":"10.1109/THERMINIC.2013.6675235","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675235","url":null,"abstract":"The experimental observation of the actual thermo mechanical weak points in microelectronics packages remains a big challenge. Recently, a stress sensing system has been developed by a publicly funded project that allows measuring the magnitudes and the distribution of the stresses induced in the silicon dies by thermo-mechanical loads. Some application experiments will be presented, e.g. thermal loads, 4-point bending on CoB setups, and moisture swelling. The stress chip was detecting CTE mismatch, transition temperature, delamination, creep relaxations and volume swelling of moisture loads. All measurements are supplemented by finite element simulations based on calibrated models for in-depth analysis and for extrapolating the stress results to sites of the package that cannot measured directly. The methodology of closely combining stress measurements at inner points and FE simulation presented in this paper has been able to validate the stress sensing system for tasks of comprehensive design and process characterization as well as for health monitoring. It allows achieving both, a substantial reduction in time to- market and a high level of reliability under service conditions, as needed for future electronics and smart systems packages.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130805028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal management challenges in the passive cooling of handheld devices 手持设备被动冷却中的热管理挑战

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675246

G. Wagner, William Maltz

引用次数: 10

Thermal conductivity measurements with the 3ω method and scanning thermal microscopy 热导率测量用3ω法和扫描热显微镜

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675242

W. Jaber, A. Assy, S. Lefèvre, S. Gomés, P. Chapuis

{"title":"Thermal conductivity measurements with the 3ω method and scanning thermal microscopy","authors":"W. Jaber, A. Assy, S. Lefèvre, S. Gomés, P. Chapuis","doi":"10.1109/THERMINIC.2013.6675242","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675242","url":null,"abstract":"Various techniques allow measuring the thermal conductivity of materials ranging from bulk to thin-film sizes. Among them, one can find the 3ω method, scanning thermal microscopy or Raman thermometry. The standard 3ω method is not spatially-resolved since it requires a long deposited metallic wire. It is also intrusive. In contrast, the two other techniques have spatial resolution ranging from few microns to submicronic one, depending on the conditions of operation. However, their sensitivity is altered by various parameters. For instance, scanning thermal microscopy signals depend strongly on the surface state. Here, by gathering results obtained with these techniques, we report on the comparison of the experimental determination of the thermal conductivity of various silicon-based and thermoelectric materials of strong interest for microelectronics. In particular, we highlight the evolution of the thermal conductivity with the temperature, which is customarily determined by the 3ω method. While it requires lithography, which can be considered as a drawback at first, the 3ω method is easier to use when varying the temperature. We conclude on the advantages and drawbacks of these techniques and provide a matrix of choices depending on the materials and conditions.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115452580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Single kernel electro-thermal IC simulator 单核电热IC模拟器

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675231

P. Raynaud

引用次数: 14

Analysis of the effectiveness of core swapping in modern multicore processors 现代多核处理器中核交换的有效性分析

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675178

P. Zając, M. Szermer, M. Janicki, C. Maj, P. Pietrzak, A. Napieralski

引用次数: 7

Proposal of new thermal resistance for light-emitting diodes 发光二极管新型热阻的提出

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675228

B. Ma, Kwanhoon Lee

引用次数: 0