19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)最新文献

Improving the accuracy of junction temperature measurement with the square-root-t method 利用平方根t法提高结温测量的精度

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675204

C. Herold, M. Beier, J. Lutz, A. Hensler

引用次数: 15

Parametric transient thermo-electrical PSPICE model for a power cable 电力电缆参数瞬态热电PSPICE模型

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675224

R. Schacht, S. Rzepka, B. Michel

引用次数: 3

Polymers in power electronics - Performance of thermal interface materials 电力电子用聚合物。热界面材料的性能

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675225

A. Zimmermann, Klaus-Volker Schutt

引用次数: 0

Reliability of advanced thermal interface technologies based on sintered die-attach materials 基于烧结模贴材料的先进热界面技术的可靠性

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675229

J. Heilmann, I. Nikitin, D. May, K. Pressel, B. Wunderle

引用次数: 0

The effect of heat treatment on spin-on oxide glasses in solar cell application 热处理对自旋氧化玻璃在太阳能电池中的应用的影响

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675238

E. Bándy, A. Foldvary, M. Rencz

引用次数: 3

Non-linear thermal simulations of semiconductor devices on system level 系统级半导体器件非线性热模拟

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675219

V. Kosel, M. Schipani, E. Seebacher

{"title":"Non-linear thermal simulations of semiconductor devices on system level","authors":"V. Kosel, M. Schipani, E. Seebacher","doi":"10.1109/THERMINIC.2013.6675219","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675219","url":null,"abstract":"A simulation approach on system level is presented. The miniaturization of semiconductor devices causes higher power dissipation density on chip in comparison to predecessors. Therefore fast simulation techniques are required to identify thermal risks in the circuits and to make thermal optimization already in the design phase prior to mass production. The FEM simulators provide accurate results at the expense of long simulation time. However, in the concept or design phase a fast estimation of temperature is needed and an accuracy of 5-15% is usually acceptable. The FEM simulators are not integrated part of IC design tools and require additional skills of designers. To facilitate the work of designers a simulation approach on system level is introduced. The basis is a thermal library implemented in the Cadence environment. The particular parts of the thermal system like die, die attach, metal-oxide-layer, power metallization, lead-frame etc. are implemented as VHDL-AMS instances in this library. Every instance consists of one dimensional T topology RC network rather than non-physical Foster one. This network represents a truncated pyramid consisting of N exponentially distributed cuboids.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131391053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Failure prediction of IGBT modules based on power cycling tests 基于功率循环试验的IGBT模块故障预测

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675197

Z. Sárkány, A. Vass-Várnai, G. Hantos, M. Rencz

引用次数: 14

Modelling of graphene and few-layer graphene heat spreaders for hot-spot cooling 石墨烯和用于热点冷却的少层石墨烯散热器的建模

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675216

Y. Ni, J. Ordonez-Miranda, Y. Chalopin, S. Volz

引用次数: 6

Investigation of Delphi compact thermal model style for modeling surface-mounted Soft Magnetic Composite inductor 基于Delphi紧凑型热模型的表面贴装软磁复合电感建模方法研究

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675210

E. Monier-Vinard, V. Bissuel, C. Dia, O. Daniel, N. Laraqi

引用次数: 5

Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry 用拉曼测温法研究了硅独立膜的热导率降低

19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) Pub Date : 2013-12-02 DOI: 10.1109/THERMINIC.2013.6675244

J. Reparaz, E. Chávez‐Ángel, J. Gomis-Bresco, M. R. Wagner, A. Shchepetov, M. Prunnila, J. Ahopelto, F. Alzina, C. S. Sotomayor Torres

{"title":"Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry","authors":"J. Reparaz, E. Chávez‐Ángel, J. Gomis-Bresco, M. R. Wagner, A. Shchepetov, M. Prunnila, J. Ahopelto, F. Alzina, C. S. Sotomayor Torres","doi":"10.1109/THERMINIC.2013.6675244","DOIUrl":"https://doi.org/10.1109/THERMINIC.2013.6675244","url":null,"abstract":"We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132292005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0