Non-linear thermal simulations of semiconductor devices on system level

V. Kosel, M. Schipani, E. Seebacher
{"title":"Non-linear thermal simulations of semiconductor devices on system level","authors":"V. Kosel, M. Schipani, E. Seebacher","doi":"10.1109/THERMINIC.2013.6675219","DOIUrl":null,"url":null,"abstract":"A simulation approach on system level is presented. The miniaturization of semiconductor devices causes higher power dissipation density on chip in comparison to predecessors. Therefore fast simulation techniques are required to identify thermal risks in the circuits and to make thermal optimization already in the design phase prior to mass production. The FEM simulators provide accurate results at the expense of long simulation time. However, in the concept or design phase a fast estimation of temperature is needed and an accuracy of 5-15% is usually acceptable. The FEM simulators are not integrated part of IC design tools and require additional skills of designers. To facilitate the work of designers a simulation approach on system level is introduced. The basis is a thermal library implemented in the Cadence environment. The particular parts of the thermal system like die, die attach, metal-oxide-layer, power metallization, lead-frame etc. are implemented as VHDL-AMS instances in this library. Every instance consists of one dimensional T topology RC network rather than non-physical Foster one. This network represents a truncated pyramid consisting of N exponentially distributed cuboids.","PeriodicalId":369128,"journal":{"name":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THERMINIC.2013.6675219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A simulation approach on system level is presented. The miniaturization of semiconductor devices causes higher power dissipation density on chip in comparison to predecessors. Therefore fast simulation techniques are required to identify thermal risks in the circuits and to make thermal optimization already in the design phase prior to mass production. The FEM simulators provide accurate results at the expense of long simulation time. However, in the concept or design phase a fast estimation of temperature is needed and an accuracy of 5-15% is usually acceptable. The FEM simulators are not integrated part of IC design tools and require additional skills of designers. To facilitate the work of designers a simulation approach on system level is introduced. The basis is a thermal library implemented in the Cadence environment. The particular parts of the thermal system like die, die attach, metal-oxide-layer, power metallization, lead-frame etc. are implemented as VHDL-AMS instances in this library. Every instance consists of one dimensional T topology RC network rather than non-physical Foster one. This network represents a truncated pyramid consisting of N exponentially distributed cuboids.
系统级半导体器件非线性热模拟
提出了一种系统级的仿真方法。半导体器件的小型化使得芯片上的功耗密度比以前更高。因此,需要快速仿真技术来识别电路中的热风险,并在批量生产之前的设计阶段进行热优化。有限元仿真器以较长的仿真时间为代价,提供了准确的仿真结果。然而,在概念或设计阶段,需要快速估计温度,通常可以接受5-15%的精度。有限元仿真器不是集成集成电路设计工具的一部分,需要设计者具备额外的技能。为了方便设计人员的工作,介绍了一种系统级的仿真方法。其基础是在Cadence环境中实现的热库。热系统的特定部件如模具、模具附件、金属氧化层、电源金属化、引线框架等在该库中以VHDL-AMS实例的形式实现。每个实例由一维T拓扑RC网络组成,而不是非物理的Foster网络。这个网络代表一个由N个指数分布的长方体组成的截形金字塔。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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