Combined method for thermal characterization of high power semiconductors

Abstract

Commonly computational methods are used to determine and enhance the lifetime of electronics and electronic systems. The validity of such methods highly depends on the used material data and therefore on the quality of the accompanying experiments. For this reason different methods were combined to better determine the thermal state of a desired device of variable size, while providing this data within in a reasonable short time. The method allows the in-situ measurement of: · the surface temperature of the top and bottom side by IR thermography and a steady state technique · the junction temperature using transient method · the generated heat flow by the tested device The correlating temperatures of the heating and cooling phase can be monitored at different geometries and setups which allows to build up static and transient simulation models and therefore make the reliability assessment of the used setup or device for many application cases possible.