14th IEEE International Conference on Nanotechnology最新文献

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Optimal design of a new structure piezo-driven cell injector 一种新型压电驱动电池注入器的优化设计
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968175
Zunbiao Ge, Haibo Huang, Liguo Chen, Cheng Qian, Ping Gao, Zhan Yang, Lining Sun
{"title":"Optimal design of a new structure piezo-driven cell injector","authors":"Zunbiao Ge, Haibo Huang, Liguo Chen, Cheng Qian, Ping Gao, Zhan Yang, Lining Sun","doi":"10.1109/NANO.2014.6968175","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968175","url":null,"abstract":"With the development of micromanipulation technique, the piezo-driven cell injector has been widely applied in cell microinjection. Traditional injection technology used piezo actuator to drive pipettes and a small mercury column was applied in micropipette to diminish the lateral tip oscillations. This injector significantly improves the survival rates of the ICSI process, but large lateral tip oscillations of the micropipette and the toxicity of mercury may damage to the cell membrane with a lower survival rate. Based on the theoretical basis of the previous generation injection structure and conventional injection system, a new design of the piezo-driven microinjector is proposed for microinjection. In this paper, the new structure uses packaged piezo actuator as driving source for connecting more stable and reliable. And it adopts two points flexible way to fix the pipette instead of the way of one point. The design parameters have been optimized for meeting the requirements of small cell injection. It's more simple and easy to use. This paper used simulation software to study the lateral vibration of the new structure, and optimized design size for minimum the lateral oscillation of micropipettes. Harmful lateral tip oscillations of micropipette are reduced substantially during simulation. Finally, we make the new microinjector by 3D printing technology for future experiment. This new structure will reduce the damage to cells in a large extent with a high success rate.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130269193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Full band Monte Carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors In0.7Ga0.3As无结纳米线场效应晶体管全带蒙特卡罗模拟
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968090
R. Hathwar, M. Saraniti, S. Goodnick
{"title":"Full band Monte Carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors","authors":"R. Hathwar, M. Saraniti, S. Goodnick","doi":"10.1109/NANO.2014.6968090","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968090","url":null,"abstract":"Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schrodinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In0.7Ga0.3As junctionless nanowire FETs including subthreshold swing.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128245147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3D sub-wavelength refractive index adjusted metal oxides for applications in optical sensing 三维亚波长折射率调整金属氧化物在光学传感中的应用
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968070
Z. Poole, P. Ohodnicki, Rongzhang Chen, Yuankun Lin, Kevin P. Chen
{"title":"3D sub-wavelength refractive index adjusted metal oxides for applications in optical sensing","authors":"Z. Poole, P. Ohodnicki, Rongzhang Chen, Yuankun Lin, Kevin P. Chen","doi":"10.1109/NANO.2014.6968070","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968070","url":null,"abstract":"We present a refractive index engineering scheme for functional metal oxides (SnO2, ZnO, TiO2) by the method of sub-wavelength engineering on the 10-50nm scale for applications in optical sensing. The method employed is based on templating by a triblock copolymer Pluronic F-127 for the manufacture of controllable 3D sub-wavelength nanostructures. By this method we demonstrate that the refractive indices of functional metal oxides can be altered substantially from their nominal value of ≥ 2 to be as low as 1.25.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126748349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metal and organic nanostructure fabrication by electron beam lithography and dry liftoff 用电子束光刻和干式发射制备金属和有机纳米结构
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968083
Arwa Saud Abbas, S. Alqarni, Babak Shokouhi, Abdullah S Abbas, M. Yavuz, B. Cui
{"title":"Metal and organic nanostructure fabrication by electron beam lithography and dry liftoff","authors":"Arwa Saud Abbas, S. Alqarni, Babak Shokouhi, Abdullah S Abbas, M. Yavuz, B. Cui","doi":"10.1109/NANO.2014.6968083","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968083","url":null,"abstract":"Liftoff and direct etch are the two most popular pattern transfer methods used for nanofabrication. The latter is limited by the etching rate selectivity between the resist and the substrate material, which is usually on the order of unity for dry plasma etching. Moreover, some metals including most noble metals cannot be dry etched. Thus liftoff is often the preferred pattern transfer method. Liftoff is typically carried out using a solvent that dissolves the resist. A strong solvent aided by ultrasonic agitation and/or heating is sometimes needed if the resist is difficult to dissolve due to, for example, cross-linking by exposure to electron beam or plasma. Another serious issue with conventional liftoff process is that the metal debris may stay at the active device area after drying. To avoid the above issues, dry liftoff using mechanical approach may be utilized. Here we report a simple dry liftoff technique using a scotch tape to peel off the resist film coated with the material to lift off. We obtained high resolution (down to 50 nm) liftoff of metal and organic materials polystyrene and Alq3, with PMMA as electron beam resist coated on a substrate treated with a low energy surfactant.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127584424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Architectural design exploration for neuromorphic processors with memristive synapses 具有记忆突触的神经形态处理器的建筑设计探索
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6967962
Qian Wang, Yongtae Kim, Peng Li
{"title":"Architectural design exploration for neuromorphic processors with memristive synapses","authors":"Qian Wang, Yongtae Kim, Peng Li","doi":"10.1109/NANO.2014.6967962","DOIUrl":"https://doi.org/10.1109/NANO.2014.6967962","url":null,"abstract":"Due to their nonvolatile nature, excellent scalability and high density, memristive nanodevices provide a promising solution for low-cost on-chip storage. Integrating memristor-based synaptic crossbars into digital neuromorphic processors (DNPs) may facilitate efficient realization of brain inspired computing. This paper investigates architectural design exploration of DNPs with memristive synapses by proposing two synapse readout schemes. The key design tradeoffs involving different analog-to-digital conversions and memory accessing styles are thoroughly investigated.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127657089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
The effects of using buffer layers on nanowire bonding and conductance properties of graphene based electronic devices 使用缓冲层对石墨烯基电子器件的纳米线键合和电导性能的影响
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968079
N. Udayakumar, A. Chakraborty, M. Irannejad, Bo Cui, A. Brzezinski, Mustafa Yavuz
{"title":"The effects of using buffer layers on nanowire bonding and conductance properties of graphene based electronic devices","authors":"N. Udayakumar, A. Chakraborty, M. Irannejad, Bo Cui, A. Brzezinski, Mustafa Yavuz","doi":"10.1109/NANO.2014.6968079","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968079","url":null,"abstract":"Nanowire bonding and conductivity of the graphene based transistors at contact interfaces were investigated numerically. It was found that using MoS2 as a buffer layer provides the highest conductivity and smallest overall stress, which makes it preferable for graphene electronic device fabrication.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133567511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Memristor state to logic mapping for optimal noise margin in memristor memories 忆阻器状态到最佳噪声裕度的逻辑映射
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968146
S. Smaili, Y. Massoud
{"title":"Memristor state to logic mapping for optimal noise margin in memristor memories","authors":"S. Smaili, Y. Massoud","doi":"10.1109/NANO.2014.6968146","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968146","url":null,"abstract":"Memristor memories provide non-volatile and high density solutions that can overcome some of the challenges faced by CMOS technology. Memristor memories use the memristor as a resistor and depict a logic 1 by a high resistance state and a logic 0 by a low resistance state. Typically, the memristor's resistance range is divided in half, and a state falling in the lower half depicts a logic 0 and the higher half depicts a logic 1. We show in this paper that it is better to use an unequal division of the range to define the resistance state corresponding to a given logic state. We show how this division can be optimized to provide the highest noise margin.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130793263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Exploring factored forms for sequential implication logic synthesis 探索顺序蕴涵逻辑合成的因子形式
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6967991
F. Marranghello, Mayler G. A. Martins, V. Callegaro, A. Reis, R. Ribas
{"title":"Exploring factored forms for sequential implication logic synthesis","authors":"F. Marranghello, Mayler G. A. Martins, V. Callegaro, A. Reis, R. Ribas","doi":"10.1109/NANO.2014.6967991","DOIUrl":"https://doi.org/10.1109/NANO.2014.6967991","url":null,"abstract":"This work proposes the use of non-recursive factored forms in material implication logic as a way to increase performance with a small additional cost in the number of required devices. Previous works addressing memristor based implication logic focus only on recursive forms. The utilization of factored forms can reduce the number of operations. Since this kind of logic is naturally sequential, the number of operations is direct related to the computation time. However, additional devices may be needed. Considering all Boolean functions up to 4 inputs, the average reduction in the number of implications when using factored forms instead of recursive forms is 8%. The best case of reduction obtained was 60% by adding only one extra memristor.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134460755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electrical conductivity, percolation threshold and dispersion properties of PMMA nanocomposites of hybrid conducting fillers 杂化导电填料PMMA纳米复合材料的电导率、渗透阈值及分散性能
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968023
P. H. Coelho, A. Morales
{"title":"Electrical conductivity, percolation threshold and dispersion properties of PMMA nanocomposites of hybrid conducting fillers","authors":"P. H. Coelho, A. Morales","doi":"10.1109/NANO.2014.6968023","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968023","url":null,"abstract":"The present study investigated the effects of the mixture of multiwalled carbon nanotubes (MWCNT) and carbon black (CB) on the electrical and dispersion properties of nanocomposites of PMMA polymerized in situ. These systems are named as mixed-carbon-filler filled systems (MCFFS). The electrical conductivity was measured by the four point probe and the dispersion was analyzed by High Resolution Transmission Electron Microscopy (HR-TEM). It has been shown that the addition of MWCNT and CB in PMMA promoted the electrical conductivity of the composite as a percolation critical concentration is reached. The percolation threshold values were 0.2 vol. (%) for MWCNT and 1.5 vol. (%) for CB, showing that this difference for the two fillers was associated with their geometric shapes, aspect ratios and dispersion characteristics. In addition, MCFFS of MWCNT and CB, varying the concentration of each filler were also prepared. For these systems it was applied the Sun model in order to calculate the theoretical values and compare them to the experimental data. It was observed the synergic effect regarding to the electrical percolation threshold concentration. The MCFFS showed lower critical concentrations (considering the sum of each single filler concentration, MWCNT and CB) and similar conductivities as compared to the single fillers. Despite the presence of aggregates, the microscopy analysis showed that both fillers were well dispersed in the polymer matrix, although the dispersion characteristics of the MWCNT were more effective than CB. In the MCFFS the MWCNT act as filaments linking clusters of the CB, what can explain the synergic effect observed for the lower percolation threshold concentration.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"261 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133153225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Spin Torque Nano Oscillator based correlator 基于自旋扭矩纳米振荡器的相关器
14th IEEE International Conference on Nanotechnology Pub Date : 2014-12-01 DOI: 10.1109/NANO.2014.6968004
Anirudha Bhat, P. Mazumder, J. Chang
{"title":"Spin Torque Nano Oscillator based correlator","authors":"Anirudha Bhat, P. Mazumder, J. Chang","doi":"10.1109/NANO.2014.6968004","DOIUrl":"https://doi.org/10.1109/NANO.2014.6968004","url":null,"abstract":"Spintronics has emerged now as a viable post-CMOS technology. The main goal of this paper is to demonstrate pattern recognition using a cluster of eight Spin Transfer Torque (STT) devices biased to operate as variable frequency oscillators, Spin Torque Nano Oscillators (STNO). The phases of STNOs can be correlated to detect a trained input pattern. This is further used to design a correlator that detects the similarity of two patterns. While the spintronics devices are generally optimized for storing binary digital data, this paper shows how they can be configured to execute neuromorphic tasks without requiring any neurons and synaptic elements.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122411022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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