Full band Monte Carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors

Abstract

Junctionless nanowire field effect transistors (JNFETs) are promising candidates for the next generation of ultrasmall, low power transistors. In the present paper, three-dimensional simulation results are presented on the performance of junctionless nanowire FETs. A full band Monte Carlo (MC) model is employed, modified to include quantum transport by self consistently solving the Schrodinger equation with a Poisson solver coupled to the full band MC transport equation. The capabilities of the model are demonstrated by simulating the performance of n-type In0.7Ga0.3As junctionless nanowire FETs including subthreshold swing.