使用缓冲层对石墨烯基电子器件的纳米线键合和电导性能的影响

N. Udayakumar, A. Chakraborty, M. Irannejad, Bo Cui, A. Brzezinski, Mustafa Yavuz
{"title":"使用缓冲层对石墨烯基电子器件的纳米线键合和电导性能的影响","authors":"N. Udayakumar, A. Chakraborty, M. Irannejad, Bo Cui, A. Brzezinski, Mustafa Yavuz","doi":"10.1109/NANO.2014.6968079","DOIUrl":null,"url":null,"abstract":"Nanowire bonding and conductivity of the graphene based transistors at contact interfaces were investigated numerically. It was found that using MoS2 as a buffer layer provides the highest conductivity and smallest overall stress, which makes it preferable for graphene electronic device fabrication.","PeriodicalId":367660,"journal":{"name":"14th IEEE International Conference on Nanotechnology","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effects of using buffer layers on nanowire bonding and conductance properties of graphene based electronic devices\",\"authors\":\"N. Udayakumar, A. Chakraborty, M. Irannejad, Bo Cui, A. Brzezinski, Mustafa Yavuz\",\"doi\":\"10.1109/NANO.2014.6968079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nanowire bonding and conductivity of the graphene based transistors at contact interfaces were investigated numerically. It was found that using MoS2 as a buffer layer provides the highest conductivity and smallest overall stress, which makes it preferable for graphene electronic device fabrication.\",\"PeriodicalId\":367660,\"journal\":{\"name\":\"14th IEEE International Conference on Nanotechnology\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"14th IEEE International Conference on Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2014.6968079\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"14th IEEE International Conference on Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2014.6968079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

对石墨烯基晶体管在接触界面处的纳米线键合和电导率进行了数值研究。研究发现,使用二硫化钼作为缓冲层可以提供最高的电导率和最小的总应力,这使得它更适合用于石墨烯电子器件的制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The effects of using buffer layers on nanowire bonding and conductance properties of graphene based electronic devices
Nanowire bonding and conductivity of the graphene based transistors at contact interfaces were investigated numerically. It was found that using MoS2 as a buffer layer provides the highest conductivity and smallest overall stress, which makes it preferable for graphene electronic device fabrication.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信