2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)最新文献_第6页

Material Selection for Ion Trap Chip Working at Extreme Low Temperatures 极低温离子阱芯片的材料选择

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654422

L. Bu, Hongyu Li, Xiaowu Zhang

引用次数: 0

High Performance Package-Level EMI shielding of Ag Epoxy Composites with Spray method for High Frequency FCBGA package Application 应用于高频FCBGA封装的喷涂法银环氧复合材料的高性能封装级EMI屏蔽

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654311

Kisu Joo, Kyu Jae Lee, Jung-Woo Hwang, Jin-Ho Yoon, Yoonhyun Kim, Se Young Jeong

{"title":"High Performance Package-Level EMI shielding of Ag Epoxy Composites with Spray method for High Frequency FCBGA package Application","authors":"Kisu Joo, Kyu Jae Lee, Jung-Woo Hwang, Jin-Ho Yoon, Yoonhyun Kim, Se Young Jeong","doi":"10.1109/EPTC.2018.8654311","DOIUrl":"https://doi.org/10.1109/EPTC.2018.8654311","url":null,"abstract":"We studied and demonstrated high-performance Ag epoxy composites. A variety of shaped Ag particles were teste to optimize the electrical properties and mechanical reliability. The resulting Ag epoxy composites containing flake-shaped Ag particles showed less than $5 times 10 ^{-7} Omega cdot mathrm {m}$ electrical conductivity and about $20mathrm {m} Omega $ series-resistance of PKG daisy chain, which directly corresponded to the excellent shield effectiveness. The shield effectiveness of resulting EMI shielding layer made of Ag and matrix is as high as 60dB, 65dB, 70dB at 5 $mu {mathrm{ m}}$, 10 $mu {mathrm{ m}}$, 20 $mu {mathrm{ m}}$-thick film, respectively by ASTM standard. We studied that how various factors, such as curing temperature, Ag contents, and film thickness, effects the electrical properties of shielding material and FCBGA package. It was found that the resistivity of conductive shielding material and the series-resistance were affected by the curing temperature than the curing time. Additionally, we demonstrated the electrical properties of AgCu epoxy composites.","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125689426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Dual-band differential outputs CMOS Low Noise Amplifier 双频差分输出CMOS低噪声放大器

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654309

Atsuhiro Hamasawa, H. Kanaya

引用次数: 5

Failure analysis on Mobile Phone Batteries and Accessories 手机电池及配件失效分析

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654349

Zhi Jin, H. Nishikawa, Y. Chan

{"title":"Failure analysis on Mobile Phone Batteries and Accessories","authors":"Zhi Jin, H. Nishikawa, Y. Chan","doi":"10.1109/EPTC.2018.8654349","DOIUrl":"https://doi.org/10.1109/EPTC.2018.8654349","url":null,"abstract":"In recent years, the demand of lithium ion battery is enlarged because of enormous capacity and free from memory effect which was widely applied to electronic devices. However, the explosion of Samsung Note7 battery arouses public attention in of lithium ion battery‘s safety issue. In addition, the capacity of battery will drop during usage time, one battery can only work for two years normally. In this study, we will find caused the explosion and capacity decrease of battery during usage process. The methodology started with thermal shock test to accelerate the aging time of battery. During the testing, the capacity change of battery after each 200 h was recorded. After the test, each component including the protective circuit, cathode and anode were analyzed respectively. From protective circuit aspects, the corrosion of PCB by hydrofluoric acid will cause malfunction of the circuit leading to overcharging or over-discharging. Since the decomposition of SEI on anode leading to exfoliation of graphite. The generation of fresh SEI will consume lithium ion inside the electrolyte leading to capacity decrease. Moreover, the phenomenon why some batteries will be swollen up during usage has been analyzed from chemical reaction aspect. Finally, this study can be used to offer good suggestions to manufacturers in improving the reliability of lithium ion battery.","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126209457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Development of Thermal Test Package for Data Center Micro-Fluid Cooling Characterization 数据中心微流体冷却特性热测试包的研制

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654269

Yong Han, B. L. Lau, G. Tang, S. Lim, Xiaowu Zhang

引用次数: 1

Development of a Flexible Printed Multi-Functional Sensor Platform for Medical Applications 医用柔性印刷多功能传感器平台的研制

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654425

David Choong Sze Wai, Ruiqi Lim, M. R. Damalerio, Weiguo Chen, Ming-Yuan Cheng

引用次数: 0

Implementation of High-Temperature Pressure Sensor Package and Characterization up to 500°C 实现高达500°C的高温压力传感器封装和表征

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654418

N. Subbiah, Qingming Feng, K. Ramirez, J. Wilde, G. Bruckner

{"title":"Implementation of High-Temperature Pressure Sensor Package and Characterization up to 500°C","authors":"N. Subbiah, Qingming Feng, K. Ramirez, J. Wilde, G. Bruckner","doi":"10.1109/EPTC.2018.8654418","DOIUrl":"https://doi.org/10.1109/EPTC.2018.8654418","url":null,"abstract":"Pressure sensors working at high temperatures of $500 ^{circ}C$ are required in various fields like aerospace, automobile and many industries. However, reliable sensors working at such high temperature are still not sufficiently developed. Mainly, developing a high temperature stable package imposes new challenges due to thermal cross-sensitivity and temperature induced stresses. Other major issues are to identify stable materials for high temperatures and stress-tolerant sensor mounting techniques. This research work focuses on the implementation of a stress-tolerant pressure sensor design for applications up to $500 ^{circ}C$: A micro strain gauge is deposited and patterned on a Langasite (LGS) crystal. It is attached to a ceramic substrate Al2O3 like a cantilever by flip-chip interconnection and glass solder underfill. The flip-chip bonding is done using gold stud bumps. The ceramic substrate has a membrane structure which is fabricated by ultrasonic machining. The deflection of the deforming membrane will be transferred pointwise to the free end of the crystal inside the package. The strain induced on the cantilever is measured by the change of resistance of a microstrain gauge. This special design concept aims at the elimination of thermal stresses between membrane and sensing device, which could induce cross-sensitivity. In this paper, processes to develop the complete assembly are presented including the choice of materials and fabrication methodology for individual parts. The resulting sensor package is stable for operations up to $500 ^{circ}C$.","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"61 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113977242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

EPIC Via Last on SOI Wafer Integration Challenges 关于SOI晶圆集成挑战的最后一篇

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654389

W. Loh, Qin Ren

引用次数: 0

Hybrid Cu-SiN and Cu-SiOx Direct Bonding of 200 MM CMOS Wafers with Five Metal Levels: Morphological, Electrical and Reliability Characterization 5个金属层的200 MM CMOS晶圆的Cu-SiN和Cu-SiOx直接键合:形态学、电学和可靠性表征

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654300

C. Cavaco, Konstantinos Chatzinis, Bert van Lijnschoten, S. Guerrieri

引用次数: 0

A New Failure Mechanism of Inter Layer Dielectric Crack 一种新的层间介电裂纹破坏机制

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654345

Haiyan Liu, Xiangyang Li, Sean Xu, Jun Li

{"title":"A New Failure Mechanism of Inter Layer Dielectric Crack","authors":"Haiyan Liu, Xiangyang Li, Sean Xu, Jun Li","doi":"10.1109/EPTC.2018.8654345","DOIUrl":"https://doi.org/10.1109/EPTC.2018.8654345","url":null,"abstract":"Converting gold wire to copper wire for IC packaging is a big trend recently which has both advantage and disadvantage. Cu wire is good for packaging cost saving to current semiconductor industry, but it may also create quality and reliability issues. Since Cu is much harder and stiffer material than Au, it may require a greater force and USG power to insure good bonding to pad, and a larger bond force and USG power in turn increases the risk of ILD crack during the bonding process. The wafer tech in this study is CMOS40nm, Al thickness is 28KA, with 53um pad opening. The ILD crack mechanism which is discussed in this paper is different. The failure mode during ATE test is leakage failure. After de-cap and cratering test, there is no cratering / damage on failed pad under microscope check. FIB was performed on failed pad and confirmed the damage between Metal 2 and Metal 3, and no damage on top metal. The link between IV curve trace and ILD crack was studied. The root cause of the ILD crack was studied, material and machine variation were also take into consideration. Parameter optimization DOE was done. Key wire bond parameters include the initial force, USG power etc. The wire pull, ball shear, IMC, Al remnant etc. are key response. The result shows that lower USG and higher initial force can get better wire bond performance. The die was packaged into a MAPBGA package. Electrical test was performed on the assembled parts at T0, post MSL3/260degree C, post 264h UHST $(110 ^{circ}mathrm{C} /85$%RH), and post TC700cycles ($- 55 ^{circ}mathrm{C}$ to $150 ^{circ}mathrm{C})$. All units post stress clean passed without any failure. The overall leakage failure rate at ATE test is reduced.","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129197770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1