2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)最新文献

Thermal simulation and measurement of component in avionics 航空电子元件的热模拟与测量

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654343

Jung Kyun Kim, Su-Heon Jeong

引用次数: 3

Effect of Wire Bonding on The Performance of RFMEMS Filters 金属键合对RFMEMS滤波器性能的影响

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654368

Nan Wang, Yao Zhu, T. Lim, Navab Singh, Y. Gu

引用次数: 1

LED multiphysics modeling for “Industry 4.0”, an approach proposed by the Delphi 4LED European project 由德尔福4LED欧洲项目提出的“工业4.0”LED多物理场建模方法

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654351

G. Farkas, L. Gaal, A. Poppe, M. Rencz, R. Bornoff

引用次数: 2

Development of cost effective Copper overburden removal for Via-Last TSV fabrication 低成本的铜覆盖层去除技术的发展

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654396

Qin Ren, W. Loh, Xiangy-Yu Wang

引用次数: 0

Mechanical property and plated solder volume effect of Cu core ball 铜芯球的力学性能及镀锡量效应

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654322

J. Son, S.G. Lee, Y. Lee, S. Jung

{"title":"Mechanical property and plated solder volume effect of Cu core ball","authors":"J. Son, S.G. Lee, Y. Lee, S. Jung","doi":"10.1109/EPTC.2018.8654322","DOIUrl":"https://doi.org/10.1109/EPTC.2018.8654322","url":null,"abstract":"Mechanical property of Cu core solder ball (CCSB) was investigated with different plated SAC305 solder volume and thickness at the ball-grid-array (BGA) after reflow. Cu core ball size was $220mu m$ and plated SAC305 on Cu core ball was tested the 3 kinds of thickness such as $8mu m$, $18mu m$, $28mu m$ with $Nimu m$ on the Cu ball surface. The (Cu, Ni)6 Sn5 interfacial IMCs were formed at interface between Cu/Ni core ball and plated solder layer after reflow. In addition, (Cu, Ni)6 Sn5 IMC was also observed at interface between plated solder and Cu-OSP pad after reflow. And these interfacial IMCs were increased after multiple reflow. Additionally, thicker SAC plating layer has higher IMC growth rate than thinner plated CCSB. In the Cu core ball joint property, thicker SAC plated layer is, the higher ductile deformation length by ball shear test (BST). And thinner SAC plated CCSB showed larger reduction rate of ductile deformation length than thicker SAC plated CCSB at BST after multiple reflow. In SMT test, minimum plated solder volume and thickness was conformed and calculated to get the stable SMT yield after flip chip process. So, when targeting gap size between PKG and interposer and solder resist opening (SRO) size were designed for PoP PKG development, it is possible to calculation of Cu core ball size and needed minimum plated volume to get good workability yield at flip chip bonding process.","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115103399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A Modified Unequal Wilkinson Power Divider Using T-Shaped Transformers 用t形变压器改进的不等威尔金森功率分压器

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654262

Ren-Fu Tsai, Pu-Hua Deng, Ting-Jung Chang

引用次数: 1

Design and optimization of the 10Tbps optical transmission system 10Tbps光传输系统的设计与优化

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654275

Huimin He, Man Zhao, Fengman Liu, H. Xue, Yu Sun, Liqiang Cao

引用次数: 0

Study of the die position accuracy in the fabrication process of a die first type FO-PLP 模首型FO-PLP加工过程中模具位置精度的研究

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654304

K. Nishido, H. Onozeki, N. Suzuki, T. Nonaka

引用次数: 4

Effect of Ar-N2Plasma Treatment on Copper Surface for Cu-to-Cu Wafer Bonding ar - n2等离子体处理对cu - cu晶圆键合铜表面的影响

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654291

H. Park, S. Kim

{"title":"Effect of Ar-N2Plasma Treatment on Copper Surface for Cu-to-Cu Wafer Bonding","authors":"H. Park, S. Kim","doi":"10.1109/EPTC.2018.8654291","DOIUrl":"https://doi.org/10.1109/EPTC.2018.8654291","url":null,"abstract":"3D packaging technology offers great benefits such as reduced power consumption, improved performance, and reduced form factor. Among three key processes in 3D packaging a low temperature Cu-to-Cu wafer bonding is the subject of interest in this study. To accommodate high conductivity, non-formation of intermetallic compound, fine pitch connectivity, high pin count, and low cost, Cu-to-Cu wafer bonding is becoming increasingly important in advanced IC device packaging manufacturing. However, for high bonding quality, Cu-to-Cu wafer bonding requires high temperature process above $400^{circ}mathrm{C}$, which is not allowed in IC device packaging manufacturing. In this study the effect of Ar-N2 plasma treatment on Cu surface was investigated for low temperature Cu-to-Cu wafer bonding applications. Ar gas is used in a plasma ignition and the activation of Cu surface by ion bombardments, and the purpose of N2 gas was to passivate u surface from contaminations such as –O or –OH. The Cu/Ti/SiO2/Si specimens were fabricated on 8-inch Si wafers. Then various Ar-N2 plasma treatments were performed on Cu wafer surface. After the Ar-N2 plasma treatments, electrical and structural properties were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope, and 4-point probe measurements. It has been confirmed that Ar-N2 plasma treatment can provide copper oxide removal and copper nitride passivation at the topmost Cu surface.","PeriodicalId":360239,"journal":{"name":"2018 IEEE 20th Electronics Packaging Technology Conference (EPTC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129016713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Understanding of within Chip variation of optical appearance of Aluminum Pads 了解铝片光学外观在芯片内部的变化

2018 IEEE 20th Electronics Packaging Technology Conference (EPTC) Pub Date : 2018-12-01 DOI: 10.1109/EPTC.2018.8654354

L. W. Lee, M. Stefenelli, Agala Joel Baldevia, N. Evelyn

引用次数: 0