Dual-band differential outputs CMOS Low Noise Amplifier

Atsuhiro Hamasawa, H. Kanaya
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引用次数: 5

Abstract

This paper presents the design of a dual-band low noise amplifier (LNA) with a single input differential outputs of 5.2 GHz and 2.4GHz band with $0.18 \mu \mathrm{m}$ CMOS technology. In order to achieve the goal of expanding the availability of telecommunication system, this LNA is designed as a dual-band operation by using a band pass filter and a notch filter simultaneously [1]. Moreover, by introducing the CG (common gate)-CS (common source) topology [2], we can obtain the output phase differs by 0 and 180 degrees. This will reduce the connection loss to the mixer developed in the previous study [3]. In this paper, simulation results of gain, noise figure and output phase difference are shown, and a chip layout is shown. The proposed LNA has a gain of 16.5 dB and 11.1 dB at 2.4 GHz and 5.2 GHz, a noise figure of 3.1 dB and 3.7 dB, and the phase difference is less than 0.32 degrees.
双频差分输出CMOS低噪声放大器
本文采用$0.18 \mu \ mathm {m}$ CMOS技术,设计了一种单输入差分输出为5.2 GHz和2.4GHz的双频低噪声放大器(LNA)。为了达到扩大电信系统可用性的目的,该LNA被设计为双带工作,同时使用带通滤波器和陷波滤波器[1]。此外,通过引入CG(共门)-CS(共源)拓扑[2],我们可以获得0度和180度的输出相位差。这将减少先前研究[3]中开发的混合器的连接损耗。文中给出了增益、噪声系数和输出相位差的仿真结果,并给出了芯片布局。所设计的LNA在2.4 GHz和5.2 GHz时的增益分别为16.5 dB和11.1 dB,噪声系数分别为3.1 dB和3.7 dB,相位差小于0.32°。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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