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2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium最新文献

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A Sub 1V CMOS LNA dedicated to 802.11b/g applications with self-test & high reliability capabilities 一种专用于802.11b/g应用的Sub 1V CMOS LNA，具有自检和高可靠性功能
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380897
M. Cimino, H. Lapuyade, M. De matos, T. Taris, Y. Deval, J. Bégueret
{"title":"A Sub 1V CMOS LNA dedicated to 802.11b/g applications with self-test & high reliability capabilities","authors":"M. Cimino, H. Lapuyade, M. De matos, T. Taris, Y. Deval, J. Bégueret","doi":"10.1109/RFIC.2007.380897","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380897","url":null,"abstract":"A low noise amplifier designed in a 0.13 mum CMOS technology, which has self-test and high reliability capabilities, is presented. Such a LNA could be used in the design of front-end of critical nodes in wireless local area networks to ensure the data transmission. The test of the LNA is based on a built-in self test methodology that permits to monitor its behavior and its reliability is ensured by the use of redundancies. The LNA works under a 0.9 V supply voltage and the test chip has characteristics suitable for 802.11 b/g applications. Parametric faults are injected and detected that demonstrate the efficiency of the BIST circuitry. Switching on each redundant block has proven that the LNA keeps its performances.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"48 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131004976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Internal Unilaterization Technique for CMOS mm-Wave Amplifiers CMOS毫米波放大器的内部单边化技术
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380924
B. Heydari, E. Adabi, M. Bohsali, B. Afshar, A. Arbabian, A. Niknejad
{"title":"Internal Unilaterization Technique for CMOS mm-Wave Amplifiers","authors":"B. Heydari, E. Adabi, M. Bohsali, B. Afshar, A. Arbabian, A. Niknejad","doi":"10.1109/RFIC.2007.380924","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380924","url":null,"abstract":"An internal unilaterization technique for cas-code devices is analyzed and demonstrated in 90 nm CMOS technology. The substrate network of the device has been incorporated in a circuit technique together with an LC tank on the top gate of the cascode structure. The structure is accurately modeled and conditions for unilaterization of the cascode are derived in terms of the the LC tank parameters. An increase in the maximum stable gain from 7.5 dB to 20 dB has been verified in the measurements using this technique.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128703499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
A 0.3mm/sup 2/ Miniaturized X-Band On-Chip Slot Antenna in 0.13/spl mu/m CMOS 0.3mm/sup /小型化x波段片上槽天线，0.13/spl mu/m CMOS
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380919
N. Behdad, D. Shi, W. Hong, K. Sarabandi, M. Flynn
{"title":"A 0.3mm/sup 2/ Miniaturized X-Band On-Chip Slot Antenna in 0.13/spl mu/m CMOS","authors":"N. Behdad, D. Shi, W. Hong, K. Sarabandi, M. Flynn","doi":"10.1109/RFIC.2007.380919","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380919","url":null,"abstract":"An on-chip miniaturized slot antenna integrated with a CMOS LNA, on the same chip, is presented in this paper. The antenna operates in the 9-10 GHz frequency band, occupies a die area of only 0.3 mm2, and is fabricated in a standard 0.13 mum RF CMOS process. A LNA implemented on the same substrate is directly matched to the antenna. An efficient shielding technique is used to shield the antenna from the low-resistivity substrate underneath it. Measurement results of the fabricated prototype indicate that the antenna shows an active gain of -4.4 dBi and an efficiency of 9% in spite of its close proximity to the lossy silicon substrate.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130628465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
CR018 Wideband Noise Model for AMS/RF CMOS Simulation 用于AMS/RF CMOS仿真的CR018宽带噪声模型
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380965
M.T. Yang, C. Kuo, P. Ho, D.C.W. Kuo, C. Chen, T. Yeh, C. Teng, J. Jayapalan, G. Brown, G. Yeap, Yang Du, S. Liu
{"title":"CR018 Wideband Noise Model for AMS/RF CMOS Simulation","authors":"M.T. Yang, C. Kuo, P. Ho, D.C.W. Kuo, C. Chen, T. Yeh, C. Teng, J. Jayapalan, G. Brown, G. Yeap, Yang Du, S. Liu","doi":"10.1109/RFIC.2007.380965","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380965","url":null,"abstract":"The experimental verification of CR018 wideband noise model for AMS/RF CMOS simulation was achieved using the BSIM3v3 flicker noise model, SPICE2 thermal noise model, and induced gate and bulk noises as well. Among which, independent flicker noise corner model scaling with device size was developed to enable low power design. Moreover, the corner frequency was measured experimentally and validated with model simulation. As to the high frequency thermal noise model, we measured the noise figure with varying gate length and compared with model simulations of SPICE2 and BSIM3v3. A good fit of SPICE2 is achieved using a theoretical value of gamma=2/3 even for the shortest channel length of 0.1 Sum. An effective gamma less than 2/3 derived from BSIM3v3 was obtained. In addition, we observed that the induced gate and bulk noises are important in high frequency as the device sized up. Finally, we sanity checked the developed wideband noise model with switched capacitor and VCO phase noise.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126534477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Application of Digital Adaptive Pre-distortion to Mobile Wireless Devices 数字自适应预失真在移动无线设备中的应用
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380875
G. Norris, J. Staudinger, Jau-Horng Chen, C. Rey, P. Pratt, R. Sherman, H. Fraz
{"title":"Application of Digital Adaptive Pre-distortion to Mobile Wireless Devices","authors":"G. Norris, J. Staudinger, Jau-Horng Chen, C. Rey, P. Pratt, R. Sherman, H. Fraz","doi":"10.1109/RFIC.2007.380875","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380875","url":null,"abstract":"Low power adaptive pre-distortion (APD) techniques are applied to nonlinear RF power amplifiers for mobile devices. An APD system is demonstrated which reduces spectral regrowth products by 10-20 dB and increases modulation accuracy by 2-6X. The use of APD allows a reduction in 3 G PA supply current by 2X and provides immunity to load mismatches as high as 8:1.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128151152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
A Sub-10mW 2Mbps BFSK Transceiver at 1.35 to 1.75GHz 一个低于10mw的2Mbps BFSK收发器，频率为1.35至1.75GHz
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380841
T. Hancock, M. Straayer, A. Messier
{"title":"A Sub-10mW 2Mbps BFSK Transceiver at 1.35 to 1.75GHz","authors":"T. Hancock, M. Straayer, A. Messier","doi":"10.1109/RFIC.2007.380841","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380841","url":null,"abstract":"This work presents the design and measurement of a 2 Mbps BFSK transceiver at 1.35 to 1.75 GHz for use in wireless sensor node applications. The receiver is a direct conversion architecture and has a sensitivity of -74 dBm at 2Mbps and consumes 8.0 mW. The transmitter generates orthogonal BFSK modulation through the use of digital pre-emphasis of the synthesizer frequency control word and consumes 9.7 mW including the power amplifier. The transmitter delivers >3 dBm of output power for a total transmitter power efficiency of 23% and a transmitter FOM of 4.85 nJ/bit at 2 Mbps.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"35 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114035015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Built-in Self Testing of a DRP-Based GSM Transmitter 基于drp的GSM发射机的内置自测试
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380896
O. Eliezer, I. Bashir, R. Staszewski, P. Balsara
{"title":"Built-in Self Testing of a DRP-Based GSM Transmitter","authors":"O. Eliezer, I. Bashir, R. Staszewski, P. Balsara","doi":"10.1109/RFIC.2007.380896","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380896","url":null,"abstract":"We present a novel approach for built-in self-testing (BIST) of an RF wireless transmitter. This approach, based on fully-digital hardware and on software algorithms, allows the testing of the transmitter's analog/RF circuitry while providing low-cost replacements for the costly traditional RF tests. The testing approach is structural in nature and substitutes for the commonly employed RF performance testing of high-cost test equipment and extended test times. The test coverage achieved for the analog circuitry is maximized to approach 100% and the test-time and associated test costs are minimized. The presented techniques have been successfully verified in a commercial 90 nm CMOS single-chip GSM radio based on the Digital RF Processor (DRPtrade) technology.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"60 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114041172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
A 2.5mW 900MHz Receiver Employing Multiband Feedback with Bias Current Reuse 一种带偏置电流复用的多波段反馈2.5mW 900MHz接收机
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380894
Junghwan Han, R. Gharpurey
{"title":"A 2.5mW 900MHz Receiver Employing Multiband Feedback with Bias Current Reuse","authors":"Junghwan Han, R. Gharpurey","doi":"10.1109/RFIC.2007.380894","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380894","url":null,"abstract":"A down-conversion receiver that employs a merged IF-amplifier and mixer is described. Down-converted signal at IF is fed back into the mixer transconductor for further amplification. The receiver operates at a nominal supply voltage of 1.2 V with a current requirement of 2.1 mA and provides a peak conversion-gain of 55 dB. The SSB noise figure is 13 dB at an IF of 1 MHz and 9.8 dB at an IF of 4 MHz. The receiver is implemented in a 0.13-mum CMOS process, with a core area of less than 0.1 mm2.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123903834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology 新型集电极结构实现低成本毫米波sigc BiCMOS技术
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380946
J. John, J. Kirchgessner, D. Morgan, J. Hildreth, M. Dawdy, R. Reuter, Hao Li
{"title":"Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology","authors":"J. John, J. Kirchgessner, D. Morgan, J. Hildreth, M. Dawdy, R. Reuter, Hao Li","doi":"10.1109/RFIC.2007.380946","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380946","url":null,"abstract":"A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124068406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A Dual Band, Wide Tuning Range CMOS Voltage Controlled Oscillator for Multi-Band Radio 一种用于多波段无线电的双频宽调谐范围CMOS压控振荡器
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380954
B. Çatli, M. Hella
{"title":"A Dual Band, Wide Tuning Range CMOS Voltage Controlled Oscillator for Multi-Band Radio","authors":"B. Çatli, M. Hella","doi":"10.1109/RFIC.2007.380954","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380954","url":null,"abstract":"A novel multi-band VCO is presented, using a double-tuned, current-driven transformer load The dual frequency range oscillator (low band and high band), is based on the ON/OFF switching of current in the secondary port of the transformer. The concept is validated through measurement results from a fabricated prototype in 0.25 mum CMOS technology. The VCO has a measured tuning range of 1.94 to 2.55 GHz for the low-frequency band and 3.6 to 4.77 GHz for the high-frequency band. It draws a current of 1.0 mA from 1.8V supply with a measured phase noise of -116 dBc/Hz at 1 MHz offset from 2.55 GHz carrier. For the high frequency band, it draws 7.5 mA from the same supply with a phase noise of -106 dBc/Hz at 1 MHz offset from 4. 77 GHz carrier.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121998408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
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