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2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium最新文献

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A 2.4-GHz LC-Tank VCO with Minimum Supply Pushing Regulation Technique 基于最小供电推进调节技术的2.4 ghz LC-Tank压控振荡器
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380848
Xuejin Wang, B. Bakkaloglu
{"title":"A 2.4-GHz LC-Tank VCO with Minimum Supply Pushing Regulation Technique","authors":"Xuejin Wang, B. Bakkaloglu","doi":"10.1109/RFIC.2007.380848","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380848","url":null,"abstract":"Design of low drop-out (LDO) supply regulated 2.4 GHz low phase noise LC-tank voltage controlled oscillator (VCO) is presented. Low-frequency supply noise sensitivity of the VCO phase noise is derived, and output noise and power supply rejection (PSR) profile of the LDO is optimized for minimum supply pushing. The LDO PSR and output noise is optimized by shaping the LDO AC response and tuning the equivalent-series resistance (ESR) of the bypass capacitor, while achieving maximum LDO current efficiency. To verify the results, two 2.4 GHz LC-tank VCOs, with a PMOS and an NMOS switching pair respectively with associated PMOS supply regulators are designed and fabricated in a 0.18 mum, 7-layer metal CMOS process. The implemented VCOs achieve less than 95 dBc/Hz phase noise at 100 kHz offset with a current consumption of 2.2 mA. By utilizing the proposed regulator AC loop shaping, the VCO phase noise sensitivity to supply noise is improved by 30 dB for offset frequency up to 10 MHz with no phase noise peaking.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115009860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Highly Integrated X-band Frequency Quadrupler MMIC using 3D-MMIC Technology 采用3D-MMIC技术的高度集成x波段频率四倍器MMIC
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380993
Y. Yamaguchi, T. Kaho, K. Uehara
{"title":"A Highly Integrated X-band Frequency Quadrupler MMIC using 3D-MMIC Technology","authors":"Y. Yamaguchi, T. Kaho, K. Uehara","doi":"10.1109/RFIC.2007.380993","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380993","url":null,"abstract":"A highly integrated X-band frequency quadrupler MMIC using three-dimensional MMIC (3D-MMIC) technology is presented. It consists of four amplifiers, two doublers, and a 2-band elimination filter. These seven circuits are integrated on only a 2.25 mm times 1.05 mm chip. The third and fifth harmonic components, which are spurious components nearest to the desired component, are well suppressed. The desired/undesired ratio is about 40 dB. The MMIC supplies +5 dBm of the fourth harmonic component at input power as low as -10 dBm. The power dissipation of the MMIC is only 160 mW.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121058854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Miniature, Folded-Switching, Up-conversion Mixer for UWB Applications Using 0.18-μ CMOS Process 一种基于0.18 μ CMOS工艺的超宽带微型折叠开关上转换混频器
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380933
Pin-Cheng Huang, F. Chang, Shih-Fong Chao, Huei Wang
{"title":"A Miniature, Folded-Switching, Up-conversion Mixer for UWB Applications Using 0.18-μ CMOS Process","authors":"Pin-Cheng Huang, F. Chang, Shih-Fong Chao, Huei Wang","doi":"10.1109/RFIC.2007.380933","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380933","url":null,"abstract":"This paper presents a compact up-conversion mixer using commercial 0.18-μm CMOS technology for UWB system applications. To achieve broadband frequency response, low power consumption, and small chip size simultaneously, the folded structure and inductor-free matching network are adopted. The measured mixer demonstrates a measured wideband response from 1 to 11 GHz with a conversion loss of lower than 6 dB. The dc power consumption is 25 mW under a supply voltage of 1.8-V, with a compact chip size of 0.5 mm times 0.6 mm.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124798752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 90nm CMOS Doherty Power Amplifier with Integrated Hybrid Coupler and Impedance Transformer 一种集成混合耦合器和阻抗变压器的90nm CMOS Doherty功率放大器
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380915
M. Elmala, R. Bishop
{"title":"A 90nm CMOS Doherty Power Amplifier with Integrated Hybrid Coupler and Impedance Transformer","authors":"M. Elmala, R. Bishop","doi":"10.1109/RFIC.2007.380915","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380915","url":null,"abstract":"An OFDM capable Doherty PA is implemented in 90 nm CMOS with integrated quadrature hybrid and impedance transformer. The two amplifiers are optimized to minimize AM-PM distortion. The PA achieves 25 dBm Psa, using 1.4 V supply with 24% PAE, and operates over 1 GHz of frequency range (from 4 GHz to 5 GHz). 3 dB to 6 dB back-off from P1dB is required to achieve -25 dB measured EVM across this band, making it suitable for WLAN and WiMAX applications. The measured AM-PM distortion varies from 4deg to 12.5deg across the 1 GHz range.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115027318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Design and Layout Techniques for the Optimization of nMOS SPDT Series-Shunt Switches in a 130nm SiGe BiCMOS Technology 在130nm SiGe BiCMOS技术中优化nMOS SPDT系列并联开关的设计和布局技术
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380923
J. Comeau, J. Cressler, M. Mitchell
{"title":"Design and Layout Techniques for the Optimization of nMOS SPDT Series-Shunt Switches in a 130nm SiGe BiCMOS Technology","authors":"J. Comeau, J. Cressler, M. Mitchell","doi":"10.1109/RFIC.2007.380923","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380923","url":null,"abstract":"This work investigates various design and layout optimization approaches for MOSFET-based series-shunt, single-pole double-throw (SPDT) switches in a commercially-available 130 nm silicon-germanium (SiGe) BiCMOS technology. The incorporation of deep-trench isolation, additional substrate contacts, and additional gate resistance for the series nMOS device are examined, and the impact of these design and layout optimizations on the switches insertion loss, bandwidth, isolation and linearity performance have been quantified across frequency. This experiment has yielded a SPDT switch with an insertion loss of - 1.4 dB, -1.5 dB, and -2.0 dB, at 5.8 GHz, 10 GHz, and 20 GHz, respectively, and an input-referred third-order intercept point (II P3) of 21 dBiu at 9.5 GHz, without the use of any process adders or additional supply voltages.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116442881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology 基于标准CMOS技术的肖特基二极管远程超高频RFID标签芯片的研制
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380883
N. Tran, Bomson Lee, Jong-Wook Lee
{"title":"Development of Long-Range UHF-band RFID Tag chip Using Schottky Diodes in Standard CMOS Technology","authors":"N. Tran, Bomson Lee, Jong-Wook Lee","doi":"10.1109/RFIC.2007.380883","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380883","url":null,"abstract":"We present the design of three key building blocks for UHF-band passive RFID tag chip, i.e., voltage multiplier, ASK demodulator, and internal clock generator. An analysis on a simple equivalent circuit of RFID tag chip for long reading range is presented taking into account the finite turn-on voltage of tag chip. The Schottky diodes used in the passive RFID tag chip were fabricated using titanium (Ti/Al/Ta/Al)-silicon (n-type) junction in 0.35 mum CMOS process, and the effect of size of Schottky diode on the turn-on voltage and the input impedance of the voltage multiplier was investigated. For 300 mV RF input voltage, the fabricated voltage multiplier using Schottky diodes generated output voltages of 1.5 V and corresponding voltage conversion efficiency of 45%. In addition, we propose an example circuit for internal oscillator of tag chip with digital calibration, which can generate precise copy of RFID reader timing signals.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128777687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 87
A 0.18-/spl mu/m CMOS Low-spurious Local Signal Generator for MB-OFDM UWB Radio 一种用于MB-OFDM UWB无线电的0.18-/spl μ m CMOS低杂散本地信号发生器
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380868
T. Tokairin, N. Matsuno, K. Numata, T. Maeda, S. Tanaka
{"title":"A 0.18-/spl mu/m CMOS Low-spurious Local Signal Generator for MB-OFDM UWB Radio","authors":"T. Tokairin, N. Matsuno, K. Numata, T. Maeda, S. Tanaka","doi":"10.1109/RFIC.2007.380868","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380868","url":null,"abstract":"This paper presents a new single PLL and single SSB-mixer architecture for a local signal generator of the Mode-1 MB-OFDM UWB systems. Using a VCO running at 8976 MHz and a divide-by-2 circuit, it can provide a 4488-MHz carrier signal with low-spurious levels, which is required to meet the spectrum mask requirements being considered in Japan and Europe. A divide-by-8.5/17 circuit using double-edge triggered operation is introduced to obtain 3432-and 3960-MHz carriers from the same VCO in order to save die area. This circuit generates 1056-and 528-MHz signals, and the required signals can be obtained by mixing these with 4488 MHz signal. The core area of the local signal generator fabricated in a 0.18-mum CMOS technology is 0.67 mm2. The spurious levels for the 4488-MHz carrier are below -41 dBc.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124641206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 900-MHz Direct-Conversion Transceiver for Mobile RFID Systems 用于移动RFID系统的900 mhz直接转换收发器
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380882
Jong-Eun Jang, Hoon Lee, Seung-Wan Choi, K. Ahn, Myoung-Sub Jung, Eui-Seok Song, Juno Kim, Hyoung-Hwan Ron, Gi-Beom Kim, Sung-Woo Bae, Ha-Ryoung Oh, Y. Seong, Jun-Seok Park
{"title":"A 900-MHz Direct-Conversion Transceiver for Mobile RFID Systems","authors":"Jong-Eun Jang, Hoon Lee, Seung-Wan Choi, K. Ahn, Myoung-Sub Jung, Eui-Seok Song, Juno Kim, Hyoung-Hwan Ron, Gi-Beom Kim, Sung-Woo Bae, Ha-Ryoung Oh, Y. Seong, Jun-Seok Park","doi":"10.1109/RFIC.2007.380882","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380882","url":null,"abstract":"A fully integrated 900-MHz direct-conversion transceiver for mobile RFID system is presented. The transceiver consists of a low noise amplifier, a down-conversion mixer, a band pass filter, and programmable gain amplifier (PGA) for RX path; and a power amplifier, an up-conversion mixer, a low-pass filter, and a PGA for TX path. In addition, the fractional N PLL is integrated to cover different frequency standards for different nations. The transceiver meets the dense reader environment specifications.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121339514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar Technology 基于硅锗双极技术的77 GHz汽车雷达低功耗低噪声单芯片接收机前端
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380853
M. Hartmann, C. Wagner, K. Seemann, J. Platz, H. Jager, R. Weigel
{"title":"A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar Technology","authors":"M. Hartmann, C. Wagner, K. Seemann, J. Platz, H. Jager, R. Weigel","doi":"10.1109/RFIC.2007.380853","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380853","url":null,"abstract":"This paper presents a single chip receiver front-end, including low-noise amplifier and mixer, for application in automotive radar systems at 77 GHz. The circuit has been implemented in a SiGe HBT technology. The complete circuit occupies 1030 times 1130 mum2 including bond pads and dissipates 440 mW from a 5.5 V supply. The front-end shows a minimum measured single sideband noise figure (SSB NF) of 11.5 dB and a maximum conversion gain of 30 dB at 77 GHz. Linearity measurements show a 1 dB input compression point of -26 dBm and a third order intercept point of -21.6 dBm at 77 GHz.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114742990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
Achieving Wideband sub-1dB Noise Figure and High Gain with MOSFETs if Input Power Matching is not Required 在不需要输入功率匹配的情况下，利用mosfet实现宽带sub-1dB噪声系数和高增益
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Pub Date : 2007-06-03 DOI: 10.1109/RFIC.2007.380972
E. Klumperink, Qiaohui Zhang, G. Wienk, R. Witvers, J. B. D. Vaate, B. Woestenburg, B. Nauta
{"title":"Achieving Wideband sub-1dB Noise Figure and High Gain with MOSFETs if Input Power Matching is not Required","authors":"E. Klumperink, Qiaohui Zhang, G. Wienk, R. Witvers, J. B. D. Vaate, B. Woestenburg, B. Nauta","doi":"10.1109/RFIC.2007.380972","DOIUrl":"https://doi.org/10.1109/RFIC.2007.380972","url":null,"abstract":"A 0.18 mum CMOS low noise amplifier (LNA) achieves sub-1 dB noise figure over more than an octave of bandwidth without external noise matching components. It is designed for a future radio telescope, requiring millions of cheap LNAs mounted directly on phased array antenna elements. The short distance between antenna and LNA and low frequency below 2 GHz allows for using an LNA with reflective input impedance, increasing the gain with 6 dB. Without any matching network, very low noise figure is achieved over a wide bandwidth. At 90 mW power, sub-1 dB Noise is achieved for 50 Omega source impedance over a 0.8-1.8 GHz band without external coils, and S21>20 dB, OIP2>25 dBm and OIP3>15 dBm. Preliminary results with 150 Omega source impedance show noise temperatures as low as 25 K around 900 MHz.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114783111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
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