A Low-Power Low-Noise Single-Chip Receiver Front-End for Automotive Radar at 77 GHz in Silicon-Germanium Bipolar Technology

Abstract

This paper presents a single chip receiver front-end, including low-noise amplifier and mixer, for application in automotive radar systems at 77 GHz. The circuit has been implemented in a SiGe HBT technology. The complete circuit occupies 1030 times 1130 mum2 including bond pads and dissipates 440 mW from a 5.5 V supply. The front-end shows a minimum measured single sideband noise figure (SSB NF) of 11.5 dB and a maximum conversion gain of 30 dB at 77 GHz. Linearity measurements show a 1 dB input compression point of -26 dBm and a third order intercept point of -21.6 dBm at 77 GHz.