在不需要输入功率匹配的情况下,利用mosfet实现宽带sub-1dB噪声系数和高增益

E. Klumperink, Qiaohui Zhang, G. Wienk, R. Witvers, J. B. D. Vaate, B. Woestenburg, B. Nauta
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引用次数: 24

摘要

0.18 μ m CMOS低噪声放大器(LNA)在没有外部噪声匹配元件的情况下,在超过一个倍频的带宽上实现低于1 dB的噪声值。它是为未来的射电望远镜设计的,需要数百万个廉价的lna直接安装在相控阵天线元件上。由于天线与LNA之间的距离较短,且频率低于2 GHz,因此可以使用具有反射输入阻抗的LNA,从而增加6 dB的增益。在没有任何匹配网络的情况下,可以在很宽的带宽上实现很低的噪声系数。在功率为90 mW时,在0.8-1.8 GHz频带上,在无外部线圈的情况下,源阻抗为50 ω,噪声低于1 dB, S21>20 dB, OIP2>25 dBm, OIP3>15 dBm。150 ω源阻抗的初步结果显示噪声温度在900 MHz左右低至25 K。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Achieving Wideband sub-1dB Noise Figure and High Gain with MOSFETs if Input Power Matching is not Required
A 0.18 mum CMOS low noise amplifier (LNA) achieves sub-1 dB noise figure over more than an octave of bandwidth without external noise matching components. It is designed for a future radio telescope, requiring millions of cheap LNAs mounted directly on phased array antenna elements. The short distance between antenna and LNA and low frequency below 2 GHz allows for using an LNA with reflective input impedance, increasing the gain with 6 dB. Without any matching network, very low noise figure is achieved over a wide bandwidth. At 90 mW power, sub-1 dB Noise is achieved for 50 Omega source impedance over a 0.8-1.8 GHz band without external coils, and S21>20 dB, OIP2>25 dBm and OIP3>15 dBm. Preliminary results with 150 Omega source impedance show noise temperatures as low as 25 K around 900 MHz.
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