J. John, J. Kirchgessner, D. Morgan, J. Hildreth, M. Dawdy, R. Reuter, Hao Li
{"title":"新型集电极结构实现低成本毫米波sigc BiCMOS技术","authors":"J. John, J. Kirchgessner, D. Morgan, J. Hildreth, M. Dawdy, R. Reuter, Hao Li","doi":"10.1109/RFIC.2007.380946","DOIUrl":null,"url":null,"abstract":"A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Novel Collector Structure Enabling Low-Cost Millimeter-Wave SiGe:C BiCMOS Technology\",\"authors\":\"J. John, J. Kirchgessner, D. Morgan, J. Hildreth, M. Dawdy, R. Reuter, Hao Li\",\"doi\":\"10.1109/RFIC.2007.380946\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"109 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380946\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A millimeter-wave selective-epi, SiGe:C HBT is described, utilizing a novel, low-cost collector construction. A cutoff frequency (fT) of 200 GHz and a maximum oscillation frequency (fMAX) of 300 GHz is achieved using a self-aligned selective-epi base structure. For a SiGe:C HBT, this is the highest known fMAX obtained without the use of buried layer or deep trench isolation.
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