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IEEE 1995 International Integrated Reliability Workshop. Final Report最新文献

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Physics-of-failure: an approach to reliable product development 失效物理:一种可靠的产品开发方法
IEEE 1995 International Integrated Reliability Workshop. Final Report Pub Date : 1995-10-22 DOI: 10.1109/IRWS.1995.493566
Michael Pecht, Abhijit Dasgupta
{"title":"Physics-of-failure: an approach to reliable product development","authors":"Michael Pecht, Abhijit Dasgupta","doi":"10.1109/IRWS.1995.493566","DOIUrl":"https://doi.org/10.1109/IRWS.1995.493566","url":null,"abstract":"Reliability assessments based on physics-of-failure methods incorporate reliability into the design process to prevent parts from failing in service. An understanding of the physics-of-failure is necessary in applications which afford little opportunity for testing, or for reliability growth. This paper presents an overview of physics-of-failure and a case study of the application of physics-of-failure to a specific failure mechanism called conductive filament formation.","PeriodicalId":355898,"journal":{"name":"IEEE 1995 International Integrated Reliability Workshop. Final Report","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124215317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 175
A new technique to measure thin oxide thickness in IC manufacturing 集成电路制造中测量薄氧化层厚度的新技术
IEEE 1995 International Integrated Reliability Workshop. Final Report Pub Date : 1995-10-22 DOI: 10.1109/IRWS.1995.493597
D. Nayak, L. Wang, R. Rakkhit
{"title":"A new technique to measure thin oxide thickness in IC manufacturing","authors":"D. Nayak, L. Wang, R. Rakkhit","doi":"10.1109/IRWS.1995.493597","DOIUrl":"https://doi.org/10.1109/IRWS.1995.493597","url":null,"abstract":"A new method to measure thin oxide thickness in CMOS technology is presented. Using a constant Fowler-Nordheim tunneling current through the gate oxide, the tunnel voltage across the oxide has been shown to be linearly proportional to the gate oxide thickness. The proposed tunnel voltage method can detect oxide thickness variation as small as 0.1 /spl Aring/ in product wafers.","PeriodicalId":355898,"journal":{"name":"IEEE 1995 International Integrated Reliability Workshop. Final Report","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126817281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Detection and analysis of ESD-induced melt filaments for FSRAMs fsram静电致熔丝的检测与分析
IEEE 1995 International Integrated Reliability Workshop. Final Report Pub Date : 1995-10-22 DOI: 10.1109/IRWS.1995.493594
M. Prud'homme, J. Miller
{"title":"Detection and analysis of ESD-induced melt filaments for FSRAMs","authors":"M. Prud'homme, J. Miller","doi":"10.1109/IRWS.1995.493594","DOIUrl":"https://doi.org/10.1109/IRWS.1995.493594","url":null,"abstract":"Summary form only given. When evaluating a new manufacturing site, Fab A, it was discovered that SRAM devices were susceptible to failures induced by Human Body Model (HBM) Electrostatic Discharge (ESD). The worst case failures were observed for a positive zap with Vss referenced, with data (I/O) pins failing a 1.0 /spl mu/A output leakage criteria at zap voltages as low as 500 V. Similar SRAM devices from a different fab, Fab B, did not have this same sensitivity. To understand the sensitivity of Fab A material, the protection device for the I/O pins was analyzed.","PeriodicalId":355898,"journal":{"name":"IEEE 1995 International Integrated Reliability Workshop. Final Report","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126114524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new physics-based model for time-dependent-dielectric-breakdown 一个新的基于物理的随时间介质击穿模型
IEEE 1995 International Integrated Reliability Workshop. Final Report Pub Date : 1995-10-22 DOI: 10.1109/IRWS.1995.493579
B. Schlund, C. Messick, J. Suehle, P. Chaparala
{"title":"A new physics-based model for time-dependent-dielectric-breakdown","authors":"B. Schlund, C. Messick, J. Suehle, P. Chaparala","doi":"10.1109/IRWS.1995.493579","DOIUrl":"https://doi.org/10.1109/IRWS.1995.493579","url":null,"abstract":"A new, physics based model for time dependent dielectric breakdown has been developed, and is presented along with test data obtained by NIST on oxides provided by National Semiconductor. Testing included fields from 5.6 MV/cm to 12.7 MV/cm, and temperatures ranging from 60/spl deg/C to 400/spl deg/C. The physics, mathematical model and test data, all confirm a linear, rather than an inverse field dependence. The primary influence on oxide breakdown was determined to be due to the dipole interaction energy of the field with the orientation of the molecular dipoles in the dielectric. The resultant failure mechanism is shown to be the formation and coalescence of vacancy defects, similar to that proposed by Dumin et al.","PeriodicalId":355898,"journal":{"name":"IEEE 1995 International Integrated Reliability Workshop. Final Report","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121517451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A new WLR method based on model parameter analysis 一种基于模型参数分析的WLR新方法
IEEE 1995 International Integrated Reliability Workshop. Final Report Pub Date : 1900-01-01 DOI: 10.1109/IRWS.1995.493596
T. Zimmer, J. Duluc, N. Milet, J. Dom
{"title":"A new WLR method based on model parameter analysis","authors":"T. Zimmer, J. Duluc, N. Milet, J. Dom","doi":"10.1109/IRWS.1995.493596","DOIUrl":"https://doi.org/10.1109/IRWS.1995.493596","url":null,"abstract":"An approach which identifies key disturbances which cause bipolar model parametric variations and correlation is presented. Model parameters, expressed as a function of technological data, are analyzed through a straightforward correlation study. Combining these results the key process variables fluctuation which causes circuit performance changes can be isolated. This methodology which links model parameter and circuit performance to process quantities, is a benefit to both device manufacturers and end users.","PeriodicalId":355898,"journal":{"name":"IEEE 1995 International Integrated Reliability Workshop. Final Report","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127242926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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