{"title":"fsram静电致熔丝的检测与分析","authors":"M. Prud'homme, J. Miller","doi":"10.1109/IRWS.1995.493594","DOIUrl":null,"url":null,"abstract":"Summary form only given. When evaluating a new manufacturing site, Fab A, it was discovered that SRAM devices were susceptible to failures induced by Human Body Model (HBM) Electrostatic Discharge (ESD). The worst case failures were observed for a positive zap with Vss referenced, with data (I/O) pins failing a 1.0 /spl mu/A output leakage criteria at zap voltages as low as 500 V. Similar SRAM devices from a different fab, Fab B, did not have this same sensitivity. To understand the sensitivity of Fab A material, the protection device for the I/O pins was analyzed.","PeriodicalId":355898,"journal":{"name":"IEEE 1995 International Integrated Reliability Workshop. Final Report","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Detection and analysis of ESD-induced melt filaments for FSRAMs\",\"authors\":\"M. Prud'homme, J. Miller\",\"doi\":\"10.1109/IRWS.1995.493594\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. When evaluating a new manufacturing site, Fab A, it was discovered that SRAM devices were susceptible to failures induced by Human Body Model (HBM) Electrostatic Discharge (ESD). The worst case failures were observed for a positive zap with Vss referenced, with data (I/O) pins failing a 1.0 /spl mu/A output leakage criteria at zap voltages as low as 500 V. Similar SRAM devices from a different fab, Fab B, did not have this same sensitivity. To understand the sensitivity of Fab A material, the protection device for the I/O pins was analyzed.\",\"PeriodicalId\":355898,\"journal\":{\"name\":\"IEEE 1995 International Integrated Reliability Workshop. Final Report\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1995 International Integrated Reliability Workshop. Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.1995.493594\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1995 International Integrated Reliability Workshop. Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.1995.493594","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Detection and analysis of ESD-induced melt filaments for FSRAMs
Summary form only given. When evaluating a new manufacturing site, Fab A, it was discovered that SRAM devices were susceptible to failures induced by Human Body Model (HBM) Electrostatic Discharge (ESD). The worst case failures were observed for a positive zap with Vss referenced, with data (I/O) pins failing a 1.0 /spl mu/A output leakage criteria at zap voltages as low as 500 V. Similar SRAM devices from a different fab, Fab B, did not have this same sensitivity. To understand the sensitivity of Fab A material, the protection device for the I/O pins was analyzed.
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