集成电路制造中测量薄氧化层厚度的新技术

IEEE 1995 International Integrated Reliability Workshop. Final Report Pub Date : 1995-10-22 DOI:10.1109/IRWS.1995.493597

D. Nayak, L. Wang, R. Rakkhit

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引用次数: 1

摘要

提出了一种测量CMOS技术中氧化层厚度的新方法。使用恒定的Fowler-Nordheim隧穿电流通过栅极氧化物，在氧化物上的隧道电压已被证明与栅极氧化物的厚度成线性比例。所提出的隧道电压法可以检测到产品晶圆中小至0.1 /spl /的氧化物厚度变化。

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A new technique to measure thin oxide thickness in IC manufacturing

A new method to measure thin oxide thickness in CMOS technology is presented. Using a constant Fowler-Nordheim tunneling current through the gate oxide, the tunnel voltage across the oxide has been shown to be linearly proportional to the gate oxide thickness. The proposed tunnel voltage method can detect oxide thickness variation as small as 0.1 /spl Aring/ in product wafers.

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IEEE 1995 International Integrated Reliability Workshop. Final Report

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