2006 25th International Conference on Thermoelectrics最新文献_第5页

Minimal Temperature of Thermoelectric Cooling: Adiabatic Approximation 热电冷却的最低温度:绝热近似

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331364

Y. Gurevich, I. Lashkevych, G. Logvinov

引用次数: 0

Residual conductivity and Seebeck coefficient calculations in TiCo1-xCuxSb alloys TiCo1-xCuxSb合金的残余电导率和塞贝克系数计算

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331298

T. Stopa, J. Toboła, S. Kaprzyk

{"title":"Residual conductivity and Seebeck coefficient calculations in TiCo1-xCuxSb alloys","authors":"T. Stopa, J. Toboła, S. Kaprzyk","doi":"10.1109/ICT.2006.331298","DOIUrl":"https://doi.org/10.1109/ICT.2006.331298","url":null,"abstract":"We report results of conductivity and Seebeck coefficient calculations for TiCo1-xCuxSb alloys, as well as their comparison with experimental data. TiCoSb crystallizes in a half-Heusler crystal structure. As revealed from experimental measurements by Horyn et al., this type of structure does not change with Cu doping until x = 0.5. Moreover, lattice constant changes also very slightly and not-monotonically for 0 < x < 0.5, varying less then 0.001 nm. Therefore, we decided to use fixed lattice constant a = 0.58819 nm for all Cu concentrations. In TiCo1-xCuxSb a semiconductor-metal phase transition is observed upon even very small Cu doping. This is connected with the fact, that Fermi level in TiCoSb is located at the top of valence band. When the number of electrons in the system grows, Fermi energy crosses energy gap (which is about 1 eV) and enters conduction band. Also Seebeck coefficient increases rapidly with x from about -350 muV/K in TiCoSb to almost zero for x = 0.5, but it doesn't change the sign. All calculations were performed within Korringa-Kohn-Rostoker (KKR) method [Bansil et al., 1990 and 1999] with coherent potential approximation (CPA) [Soven, 1967] and [Kaprzyk and Bansil, 1990]","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129067202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Transient Behavior Study of Thermoelectric Generators through an Electro-thermal Model Using SPICE 基于SPICE的电热模型研究热电发电机的瞬态行为

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331335

Min Chen, L. Rosendahl, I. Bach, T. Condra, J. Pedersen

{"title":"Transient Behavior Study of Thermoelectric Generators through an Electro-thermal Model Using SPICE","authors":"Min Chen, L. Rosendahl, I. Bach, T. Condra, J. Pedersen","doi":"10.1109/ICT.2006.331335","DOIUrl":"https://doi.org/10.1109/ICT.2006.331335","url":null,"abstract":"A thermoelectric generator (TEG) usually works in dynamic operating conditions due to the time change, in real applications, of the electric load and hot or cold temperatures. Thus understanding transient thermal and electrical behavior of the device, besides the steady-state behavior, is important in order to investigate the global device performance. The major objective of this work is to describe the transient behavior of TEG operating in high temperature environments through a SPICE model based on an electrothermal analogy. The SPICE model presented is derived from a one dimensional (1-D) heat transfer differential equation. An important feature of the model is its ability to calculate the temperature profile taking the real temperature dependence of the materials properties into account. This feature is essential in simulating TEG exposed to a large temperature difference. In combination with considering the finite heat transfer rate at the interface between TEG and thermal ambient, the model is able to reflect the thermo-electric coupled multi-field system effect of TEG. A test rig is developed for verifying the proposed model. Commercially available TEG is tested with respect to stabilizing time under sharply changed electric load. The preliminary results of experiments and modeling are analyzed. It is expected that the model presented can assist, not only in the optimal design of TEG itself, but also in the evaluation of the whole energy system","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123029505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 24

Thermoelectric Conversion System based on Geothermal and Solar Heat 基于地热能和太阳能的热电转换系统

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331345

C. Eisenhut, A. Bitschi

引用次数: 19

Electronic Properties of Low-Temperature Thermoelectric Materials: Selenium Doped Bismuth-Antimony Alloys 低温热电材料的电子性能:硒掺杂铋锑合金

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331340

M. Koyano, R. Hokaku

引用次数: 2

Electronic Properties of 2D Alkali Cobaltites and Related Oxides 二维碱钴酸盐及相关氧化物的电子性质

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331268

M. Blangero, M. Pollet, D. Carlier, J. Darriet, C. Delmas, R. Decourt, J. Doumerc

{"title":"Electronic Properties of 2D Alkali Cobaltites and Related Oxides","authors":"M. Blangero, M. Pollet, D. Carlier, J. Darriet, C. Delmas, R. Decourt, J. Doumerc","doi":"10.1109/ICT.2006.331268","DOIUrl":"https://doi.org/10.1109/ICT.2006.331268","url":null,"abstract":"Strong thermoelectric power (TEP) can be achieved in semiconducting oxides when a low carrier density is created by appropriate atomic substitutions or intercalations, but the electrical resistivity remains too large. Actually, oxides such as layered cobaltites for which the best balance between high TEP and small resistivity is reached contain a large concentration of strongly correlated carriers. However, the origin of the large TEP values still remains an open question. In mixed valence oxides two main transport mechanisms are generally involved: either a metallic type transport with a mean free path larger than that predicted by the Ioffe-Regel limit or a hopping type transport. In the first case, according to Mott's equation, large TEP values could result from peculiar energy dependence of the density of states and relaxation time at the Fermi level; in the second case TEP can be calculated using Heikes formula. In both cases, TEP can be enhanced by spin entropy effects mainly expected for spin polarized metallic oxides (or half metals) rather than Pauli metals. For hopping transport an additional term in Heikes formula arising from the spin as well as orbital degeneracy must be taken into account. The specificity of the Co3+ ions (3d6) that can exhibit three different electronic configurations (S = 0, S = 1 and S = 2) in oxides, depending on the interplay of exchange and crystal field energies, as well as the dimensionality of the crystal structure, the site symmetry and correlation effects is also discussed. The behavior of recently investigated potassium-intercalated 2D-cobaltites is compared to that of the corresponding sodium oxides","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131160244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Diffusion Thermopower Of Bismuth Nanowires And The Role Of Carrier's Boundary Scattering. Doping, Pressure and Magnetic Field Studies 铋纳米线的扩散热能及载流子边界散射的作用。掺杂、压力和磁场研究

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331256

A. Nikolaeva, T. Huber, L. Konopko

{"title":"Diffusion Thermopower Of Bismuth Nanowires And The Role Of Carrier's Boundary Scattering. Doping, Pressure and Magnetic Field Studies","authors":"A. Nikolaeva, T. Huber, L. Konopko","doi":"10.1109/ICT.2006.331256","DOIUrl":"https://doi.org/10.1109/ICT.2006.331256","url":null,"abstract":"Bulk Bi and Bi-Sb are of interest for solid state cooling applications. Composites of these materials may show to be superior to bulk materials in these applications, because of quantum confinement and phonon scattering. Also, there is an interested in miniature devices and nanoscale coolers that interface with them. We have studied the thermopower of single Bi nanowires of diameters in the range 50-500 nm. The nanowires are fabricated as single strands of thermoelectric material, that are monocrystalline, in a glass envelope (a fiber). We observe that the thermopower peaks of around +90 muV/K at around 50 K. These values are the largest for any electrical-conductor in this temperature range. We interpret these effects in terms of a phenomenological model where boundary scattering is more effective for electrons than for holes. The temperature and the value of thermopower maximum depend sensitively with magnetic fields and Te doping. Also, stretching the fibers cause uniaxial stresses similar to that of \"negative pressure\" [Hicks, LD, et. al., 1993] that drives an electron topological transition, similarly to the case of Bi-Te [Lin, Y-M, et. al., 2000]. Near the ETT point we recorded very large oscillations of the thermopower, that are associated with the Landau levels in the nanowires. Our work focuses in the development a mathematical model to optimize the thermoelectric figure of merit considering magnetic field, doping, and pressure","PeriodicalId":346555,"journal":{"name":"2006 25th International Conference on Thermoelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131242937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

The thermoelectric properties of [Ca2CoO3]0.62[CoO2] textured ceramics [Ca2CoO3]0.62[CoO2]织构陶瓷的热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331287

X. Huang, Y. Miyazaki, K. Yubuta, Y. Oide, T. Kajitani

引用次数: 2

Preparation and Thermoelectric Properties of N-type PbTe Doped with In and PbI2 In和PbI2掺杂n型PbTe的制备及其热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331277

Chunquan Long, Xufeng Hou, Y. Gelbstein, Jianzhong Zhang, B. Ren, Zeshen Wang

引用次数: 8

Mechanical and Thermoelectric Performance of p-type Bi-Sb-Te Prepared by Hot Pressing 热压法制备p型Bi-Sb-Te的力学和热电性能

2006 25th International Conference on Thermoelectrics Pub Date : 2006-08-01 DOI: 10.1109/ICT.2006.331226

Xiaofeng Wu, Guiying Xu, Ya-dong Xu, Chunyan Zhang, C. Ge

引用次数: 1