{"title":"Standard cell printability grading and hot spot detection","authors":"M. Côté, P. Hurat","doi":"10.1109/ISQED.2005.113","DOIUrl":"https://doi.org/10.1109/ISQED.2005.113","url":null,"abstract":"Prior to 90nm the main contributor to yield loss was particle contamination. Random particle defects were directly proportional to particle density and chip size. To maximize yield, manufacturing was done in clean rooms where particles were reduced to a minimum. Yield was then directly proportional to the chip size. At 90nm and below, systematic defects play major roles in yield. Two designs of the same size can result in very different yield. This paradigm shift is caused by the printability problems that are inherent to process technologies operating in the sub-wavelength regime. The technology for printing patterns on silicon has not kept up with Moore's law. The wavelength of lithography equipment is as much as 6 times larger than the silicon features. This results in greater variation on silicon, which directly affects yield. How the design is implemented is becoming as important as how small you make it. Even at the standard cell level different solutions can demonstrate increased sensitivity to particles, short, opens, gate leakage and other yield issue. We present in this paper a methodology for grading how well standard cells will print on silicon. Using standard cell layouts, we predict a silicon image under different process conditions and take CD measurements on these images. These measurements are converted into a printability factor for each cell. This printability factor is used to grade cells and identify which cells have the largest impact on printability and which should be optimized. To help with this optimization the measurements are also used to mark printability hot spots in the cell layouts.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"334 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124707955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Reduced test application time based on reachability analysis","authors":"T. Haniotakis, S. Tragoudas, G. Pani","doi":"10.1109/ISQED.2005.102","DOIUrl":"https://doi.org/10.1109/ISQED.2005.102","url":null,"abstract":"A test application method to reduce the test application time in full scan designs is presented. It can be used either during or after the test pattern generation phase so that one or more patterns can be reached from an already scanned pattern using scan reapply or scan shift operations. The presented approach is based on established methods for reachability analysis in sequential verification and a fault grading algorithm to ensure that all targeted faults are covered.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124915825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Patil, Sunghee Yun, Seung-Jean Kim, Alvin Cheung, M. Horowitz, Stephen P. Boyd
{"title":"A new method for design of robust digital circuits","authors":"D. Patil, Sunghee Yun, Seung-Jean Kim, Alvin Cheung, M. Horowitz, Stephen P. Boyd","doi":"10.1109/ISQED.2005.11","DOIUrl":"https://doi.org/10.1109/ISQED.2005.11","url":null,"abstract":"As technology continues to scale beyond 100 nm, there is a significant increase in performance uncertainty of CMOS logic due to process and environmental variations. Traditional circuit optimization methods assuming deterministic gate delays produce a flat \"wall\" of equally critical paths, resulting in variation-sensitive designs. This paper describes a new method for sizing of digital circuits, with uncertain gate delays, to minimize their performance variation leading to a higher parametric yield. The method is based on adding margins on each gate delay to account for variations and using a new \"soft maximum\" function to combine path delays at converging nodes. Using analytic models to predict the means and standard deviations of gate delays as polynomial functions of the device sizes, we create a simple, computationally efficient heuristic for uncertainty-aware sizing of digital circuits via geometric programming. Monte-Carlo simulations on custom 32 bit adders and ISCAS'85 benchmarks show that about 10 % to 20 % delay reduction over deterministic sizing methods can be achieved, without any additional cost in area.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122096780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Modeling MOS snapback for circuit-level ESD simulation using BSIM3 and VBIC models","authors":"Y. Zhou, D. Connerney, Ronald Carroll, T. Luk","doi":"10.1109/ISQED.2005.81","DOIUrl":"https://doi.org/10.1109/ISQED.2005.81","url":null,"abstract":"A novel macro model approach for modeling ESD MOS snapback is introduced. The macro model consists of standard components only. It includes a MOS transistor modeled by BSIM3v3, a bipolar transistor modeled by VBIC, and a resistor for substrate resistance. No external current source, which is essential in most publicly reported macro models, is included since both BSIM3vs and VBIC have formulations built in to model the relevant effects. The simplicity of the presented macro model makes behavior languages, such as Verilog-A, and special ESD equations not necessary in model implementation. This offers advantages of high simulation speed, wider availability, and less convergence issues. Measurement and simulation of the new approach indicates that good silicon correlation can be achieved.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122493184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Using MUXs network to hide bunches of scan chains","authors":"Yinhe Han, Yu Hu, Huawei Li, Xiaowei Li","doi":"10.1109/ISQED.2005.127","DOIUrl":"https://doi.org/10.1109/ISQED.2005.127","url":null,"abstract":"This paper presents a decompression architecture using a periodically alterable MUX network. Compared to the static XOR network, the periodically alterable MUX network has multiple configurations to decode the input information flexibly. Probability analysis can help us to select the proper parameter when considering the DFT schemes. With the dedicated efforts, smaller test data volume and test application time can be achieved compared to previous techniques.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122668751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Wire planning with bounded over-the-block wires","authors":"Hua Xiang, I-Min Liu, Martin D. F. Wong","doi":"10.1109/ISQED.2005.130","DOIUrl":"https://doi.org/10.1109/ISQED.2005.130","url":null,"abstract":"The hierarchical approach greatly facilitates large-scale chip design by hiding distracting details in low-level objects. However, the low-level designs have to have a global view of high-level object connections so that some resources can be allocated in advance, and this makes wire planning an important issue in physical design. In this paper, we present two exact polynomial-time algorithms for wire planning with bounded over-the-block wires. The constraints on over-the-block wires help the longest over-the-block wires within a block to satisfy signal integrity without buffer inserted. Both algorithms guarantee to find an optimal routing solution for a two-pin net as long as one exists. One requires less memory, while the other may take less running time when processing a large number of nets. According to different application requirements, users can choose an appropriate one.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122746519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Performance-driven OPC for mask cost reduction","authors":"Puneet Gupta, A. Kahng, D. Sylvester, Jie Yang","doi":"10.1109/ISQED.2005.93","DOIUrl":"https://doi.org/10.1109/ISQED.2005.93","url":null,"abstract":"With continued aggressive process scaling in the subwavelength lithographic regime, resolution enhancement techniques (RET) such as optical proximity correction (OPC) are an integral part of the design to mask flow. OPC adds complex features to the layout, resulting in mask data volume explosion and increased mask costs. Traditionally the mask flow has suffered from a lack of design information, such that all features (whether critical or non-critical) are treated alike by RET insertion. Gupta et al. (2003) proposes to exploit design information (timing slacks) to reduce OPC data volume, but has a number of impractical aspects. In this paper, we propose an implementable flow that drives model-based OPC explicitly by timing constraints, with the objective of reducing mask data volume and OPC runtime. We apply a mathematical programming based slack budgeting algorithm to determine edge placement error (EPE) tolerance budgets for all polysilicon gate geometries. These tolerances are then enforced by a commercial OPC tool to achieve up to 24% MEBES data volume and 41% OPC runtime reductions on a suite of six testcases implemented in Artisan TSMC 0.13 /spl mu/m libraries.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126298579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Noise aware decoupling capacitors for multi-voltage power distribution systems","authors":"M. Popovich, E. Friedman","doi":"10.1109/ISQED.2005.84","DOIUrl":"https://doi.org/10.1109/ISQED.2005.84","url":null,"abstract":"Multiple power supply voltages are often used in modern high performance ICs, such as microprocessors, to decrease power consumption without affecting circuit speed. The system of decoupling capacitors used in power distribution systems with multiple power supplies is described. In order to minimize the total impedance of a multi-voltage power delivery system as seen from a particular power supply, a decoupling capacitor is placed between the power supplies. The noise at one power supply can couple into the other power supply, causing power and signal integrity problems in the overall system. With the introduction of a second power supply, therefore, the interaction between the two power distribution networks should be considered. The dependence of the magnitude of the voltage transfer function on the parameters of the power distribution system is investigated. It is shown that it is highly desirable to maintain the effective series inductance of the decoupling capacitors as low as possible to decrease the overshoot in the response of a dual voltage power distribution system over a wide range of operating frequencies. A criterion for an overshoot-free voltage response is presented. It is noted that the frequency range of the overshoot-free voltage response can be traded off with the magnitude of the response.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121969366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Leakage current modeling in PD SOI circuits","authors":"M. Nanua, D. Blaauw, C. Oh","doi":"10.1109/ISQED.2005.74","DOIUrl":"https://doi.org/10.1109/ISQED.2005.74","url":null,"abstract":"In this paper we demonstrate the transient behavior of off-state device leakage due to signal switching history in PD SOI devices. We address the leakage modeling for PD SOI circuits taking input switching history into account and demonstrate that the off-state power dissipation is a function of the device input duty cycle due to body voltage variations with switching history in SOI devices. We also demonstrate that the device off-state power dissipation can be 2.4 times higher than the power dissipation calculated with traditional steady state off-state device current.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126752931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Power reduction in test-per-scan BIST with supply gating and efficient scan partitioning","authors":"S. Bhunia, H. Mahmoodi, D. Ghosh, K. Roy","doi":"10.1109/ISQED.2005.96","DOIUrl":"https://doi.org/10.1109/ISQED.2005.96","url":null,"abstract":"Reduction in average and peak power during test application is important to improve battery lifetime in portable electronic devices employing periodic self-test and to improve reliability/cost of testing. This paper proposes an integrated solution for peak and average power reduction in test-per-scan BIST by targeting power reduction in both combinational block and scan chain. First, we present a novel circuit technique, called first level supply gating (FLS), to virtually eliminate power dissipation in combinational logic by masking signal transition at the logic inputs during scan shifting. We realize the masking effect by inserting an extra supply gating transistor in the VDD to GND path for the first level gates at the output of scan flip-flops. Simulation results on ISCAS89 benchmarks show an average reduction of 65% in area overhead, 119% in power overhead (in normal mode), and 104% in delay overhead compared to the lowest-cost known signal masking alternative. To reduce the leakage power of the combinational block, which is considerably high in scaled technologies, we propose input vector control using FLS during scan shifting. Experiments on a set of ISCAS89 benchmarks show about 38% average reduction in leakage power with the proposed leakage reduction technique. Second, to address the power in the scan chain, we propose an efficient scan partitioning technique that reduces both average and peak power in the scan chain during shift and functional cycles. Experiments on a set of ISCAS89 benchmarks show 12.6% average reduction in peak power with the proposed partitioning method over partitioning according to RTL description.","PeriodicalId":333840,"journal":{"name":"Sixth international symposium on quality electronic design (isqed'05)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127966169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}