Leakage current modeling in PD SOI circuits

M. Nanua, D. Blaauw, C. Oh
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引用次数: 3

Abstract

In this paper we demonstrate the transient behavior of off-state device leakage due to signal switching history in PD SOI devices. We address the leakage modeling for PD SOI circuits taking input switching history into account and demonstrate that the off-state power dissipation is a function of the device input duty cycle due to body voltage variations with switching history in SOI devices. We also demonstrate that the device off-state power dissipation can be 2.4 times higher than the power dissipation calculated with traditional steady state off-state device current.
PD SOI电路的漏电流建模
在本文中,我们证明了在PD SOI器件中由于信号开关历史导致的断开状态器件泄漏的瞬态行为。我们解决了考虑输入开关历史的PD SOI电路的泄漏建模问题,并证明了由于SOI器件中体电压随开关历史的变化而变化的器件输入占空比是断开状态功耗的函数。我们还证明了器件的失态功耗可以比传统稳态失态器件电流计算的功耗高2.4倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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