2013 IEEE International Conference of Electron Devices and Solid-state Circuits最新文献_第2页

Ramp-based soft-start circuit with soft-recovery for DC-DC buck converters 用于DC-DC降压变换器的带软恢复的斜坡软启动电路

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628196

Yuan Bing, Lai Xin-quan, Ye Qiang, Wang Hongyi, L. Yajun

引用次数: 9

TLP and HBM ESD test correlation for power ICs 功率ic的TLP和HBM ESD测试相关性

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628149

R. Ma, Li Wang, Chen Zhang, Fei Lu, Z. Dong, Albert Z. H. Wang, Wei Lu, Yonghua Song, B. Zhao

引用次数: 7

Correctness of BDEC compared to PGM in assessing reliability of nano-based circuits BDEC与PGM在纳米电路可靠性评估中的正确性比较

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628092

N. Singh, N. H. Hamid, V. Asirvadam

{"title":"Correctness of BDEC compared to PGM in assessing reliability of nano-based circuits","authors":"N. Singh, N. H. Hamid, V. Asirvadam","doi":"10.1109/EDSSC.2013.6628092","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628092","url":null,"abstract":"As CMOS scales further into non-CMOS technology, being able to measure reliability of modern logic integrated circuits instantly and correctly is fast becoming necessary. Therefore, reliability assessment has become a decisive step in the design methodology of nano-sized circuit systems. In contemporary to current literature, the existing reliability assessment tool based on Probabilistic Gate Model (PGM) and Boolean Difference-error Calculator (BDEC) techniques works manually, thus making the process of computing reliability very intractable and time consuming. For an instant reliability measure, this paper firstly looks into the development of an automated reliability assessment tool based on the generalization of PGM and BDEC techniques. The Matlab-based tool allows users to speed-up the task of reliability analysis for large number of nano-based electronic circuits. Secondly, by using the developed automated tool, the work explores into the correctness of BDEC compared to PGM in assessing reliability of same functionality nano-based circuits. The reliability analysis shows that BDEC gives correct and transparent reliability measures, but as the complexity of the same functionality circuits with respect to gate error increases, BDEC tends to be more inferior in the reliability measure compared to PGM. The lower reliability measures by BDEC is well explained in this paper using distribution of different signal input patterns overtime for same functionality circuits. Simulation results conclude that the reliability measure by BDEC does not only depend on faulty gates but it also depends on circuit, probability of input signals being one or zero and probability of error on signal lines.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123881056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

120 V super junction LDMOS transistor 120v超级结LDMOS晶体管

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628135

S. Panigrahi, M. Baghini, U. Gogineni, F. Iravani

引用次数: 5

Novel integrated optical microspectrometer using silica nanoparticles 新型二氧化硅纳米颗粒集成光学显微光谱仪

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628189

Tao Yang, Wei Li, Xing’ao Li, Wei Huang, H. Ho, Qian-jin Wang, Yong‐yuan Zhu

引用次数: 1

Power- & area-efficiency enhancement techniques of switched-capacitor power converters for low-power applications 用于低功耗应用的开关电容功率变换器的功率和面积效率提高技术

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628143

Hoi Lee, Zhe Hua

{"title":"Power- & area-efficiency enhancement techniques of switched-capacitor power converters for low-power applications","authors":"Hoi Lee, Zhe Hua","doi":"10.1109/EDSSC.2013.6628143","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628143","url":null,"abstract":"Switched-capacitor (SC) power converters that use capacitors as energy storage elements offer much better power density than switched-inductor counterparts and are thus attractive in low-power area-constrained applications. This paper first reviews the importance of having auto-reconfigurable conversion ratios in the SC power stage in order to enable the regulator to maintain high power efficiency under unstable input voltages. To minimize the required capacitors and power switches in SC power converters, multiple-output SC power regulators can share capacitors and power switches in the power stage for generating multiple regulated outputs and thus improving the converter area efficiency. To simultaneously illustrate above concepts, an auto-reconfigurable dual-output SC power regulator is developed to generate two outputs while saving 1 flying capacitor and 3 power switches compared with using two independent single-output doubler and tripler. The proposed regulator has minimal cross regulation between outputs and achieves a maximum power efficiency of 88% via auto-reconfiguration when the input voltage varies from 1.1V to 1.6V.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125797798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A nano-power switched-capacitor voltage reference using body effect in MOSFETs for application in subthreshold LSI 应用于亚阈值LSI的基于体效应的mosfet纳米功率开关电容基准电压

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628130

Hao Zhang, Mengshu Huang, Yimeng Zhang, Xutao Li, T. Yoshihara

引用次数: 3

Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures 电离辐射对不同布局结构PD-SOI器件泄漏电流的影响

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628221

Liu Yuan, He Yu-juan, En Yun-fei, Shi Qian

引用次数: 1

Physically based models of electromigration 基于物理的电迁移模型

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628175

R. L. de Orio, S. Selberherr

引用次数: 4

Room-temperature fabrication of flexible gallium-doped zinc oxide thin-film transistors on plastic substrates 塑料衬底上柔性掺镓氧化锌薄膜晶体管的室温制备

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628232

F. Huang, Dedong Han, D. Shan, Yu Tian, Suoming Zhang, Y. Cong, Yi Wang, Lifeng Liu, Xing Zhang, Shenmin Zhang

引用次数: 1