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2013 IEEE International Conference of Electron Devices and Solid-state Circuits最新文献

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Recent development of surface integral equation solvers for multiscale interconnects and circuits 多尺度互连电路曲面积分方程求解器的最新进展
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628158
Sheng Sun, Lijun Jiang, W. Chew
{"title":"Recent development of surface integral equation solvers for multiscale interconnects and circuits","authors":"Sheng Sun, Lijun Jiang, W. Chew","doi":"10.1109/EDSSC.2013.6628158","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628158","url":null,"abstract":"This paper presents a brief review and recent development of surface integral equation solvers for multiscale interconnects and circuits modeling. As the future production processes down to 5 nm and the operating frequency increases, both multi-scale and large-scale natures should be taken into account in the electromagnetic simulations. Fast, efficient, stable, and broadband integral equation based solvers become indispensable when millions or ten s of millions of unknowns might be involved in the simulation of the integrated circuit. Recent progress and our latest researches in the development of broadband fast electromagnetic solvers will be demonstrated.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121029005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The advanced sensor applied to the dust-charged detection 先进的传感器应用于粉尘检测
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628171
M. Cao, Xuezhen Cheng, Yu Hong
{"title":"The advanced sensor applied to the dust-charged detection","authors":"M. Cao, Xuezhen Cheng, Yu Hong","doi":"10.1109/EDSSC.2013.6628171","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628171","url":null,"abstract":"In this paper, a detection sensor is designed. The mathematics and simulation models based on the charge induction mechanism are built. The characteristics of the sensor are developed by using the finite-element method. A method combined by GA (genetic algorithm) and ANSYS is introduced to analyses the optimal sensitive response. The performance has been evaluated. And the device with three probe scales in series illustrates that the dimension of the device is the most sensitivity issue. At same time, a new measurement system based on the differential principles with three probe device is proposed.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121063051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device variability and reliability check for ultra-thin-body and bulk oxide CMOSFETs 超薄体和大块氧化cmosfet的器件可变性和可靠性检查
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628081
W. Yeh, C. Lai, L. Chin, Po-Ying Chen
{"title":"Device variability and reliability check for ultra-thin-body and bulk oxide CMOSFETs","authors":"W. Yeh, C. Lai, L. Chin, Po-Ying Chen","doi":"10.1109/EDSSC.2013.6628081","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628081","url":null,"abstract":"In this work, we investigate the impact of substrate doping concentration on device characteristic variation and sensitivity to substrate bias for ultra-thin body and bulk oxide SOI MOSFET. We found that high substrate dose device suffer from unsymmetrical and variance in device's characteristics. Compared to high dose substrate UTBB-SOI device, low dose substrate device characteristic is less sensitive to substrate back bias. And we found that low substrate dose SOI device which with lower impact ionization shows better device's reliability than the high substrate dose one does.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127516116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
30 GHz 2-stage MMIC low noise amplifier using GaAs pseudomorphic HEMT 采用GaAs伪晶HEMT的30 GHz 2级MMIC低噪声放大器
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628044
A. Rasmi, I. M. Azmi, A. Rahim, H. Hsu, E. Chang
{"title":"30 GHz 2-stage MMIC low noise amplifier using GaAs pseudomorphic HEMT","authors":"A. Rasmi, I. M. Azmi, A. Rahim, H. Hsu, E. Chang","doi":"10.1109/EDSSC.2013.6628044","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628044","url":null,"abstract":"Summary form only given. This paper presents the design and simulated performance of millimeter-wave monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA). A two stage LNA has been designed and developed using a 0.15um commercial GaAs pseudomorphic HEMT technology. The simulated data shows 2.21dB of noise figure with an associated gain of 13.14dB at the frequency operation of 30 GHz. At 3.0V of drain voltage, VDS and -0.20V of gate voltage, VGS; this LNA consume 56mA of total current and achieves 16.10dBm of output P1dB. The layout size is 4.1 × 1.3 mm2.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124996708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor 碳纳米管场效应晶体管源耗尽状态下的应变建模
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628235
Z. Ahmed, M. Chan
{"title":"Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor","authors":"Z. Ahmed, M. Chan","doi":"10.1109/EDSSC.2013.6628235","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628235","url":null,"abstract":"Strain incorporated surface potential based compact model for Carbon Nanotube field effect transistor (CNTFET) is presented in this paper. The model is first of its kind and confers strain phenomena by accounting for the induced change in band-gap and corresponding energy band opening near the Fermi-level of the CNTFET in source exhaustion regime.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125501275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple leakage current model for polycrystalline silicon nanowire thin-film transistors 多晶硅纳米线薄膜晶体管漏电流的简单模型
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628090
Hongyu He, Jin He, W. Deng, Hao Wang, Yue Hu, Xiaoan Zhu, Xueren Zheng
{"title":"A simple leakage current model for polycrystalline silicon nanowire thin-film transistors","authors":"Hongyu He, Jin He, W. Deng, Hao Wang, Yue Hu, Xiaoan Zhu, Xueren Zheng","doi":"10.1109/EDSSC.2013.6628090","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628090","url":null,"abstract":"A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116392375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications 提高了高频掺杂BaTiO3作为闪存电荷捕获层的性能
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628237
X. Huang, P. Lai
{"title":"Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications","authors":"X. Huang, P. Lai","doi":"10.1109/EDSSC.2013.6628237","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628237","url":null,"abstract":"BaTiO<sub>3</sub> with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTiO<sub>3</sub> CTL, the one with Hf-doped BaTiO<sub>3</sub> shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTiO<sub>3</sub>. Therefore, the Hf-doped BaTiO<sub>3</sub> is a promising candidate as CTL for flash memory application.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116448743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application 1.8ppm/°C低温系数曲率补偿带隙的低电压应用
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628095
Chun Yang, Xiaole Cui, Bo Wang, Chung-Len Lee
{"title":"A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application","authors":"Chun Yang, Xiaole Cui, Bo Wang, Chung-Len Lee","doi":"10.1109/EDSSC.2013.6628095","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628095","url":null,"abstract":"A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 μm technology, it achieves performance of a temperature coefficient of 1.8 ppm/°C over 0 ~ 100°C, a line regulation of 0.017%/V over the range 1.2 ~3 V and a power supply rejection ratio of 82 dB@1 Hz. It can offer a reference voltage of 1.1 V but occupy an area of only 0.049 mm2.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128416322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A novel ESD self-protecting symmetric nLDMOS for 60V SOI BCD process 用于 60V SOI BCD 工艺的新型 ESD 自保护对称 nLDMOS
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628102
Y. Wang, Guangyi Lu, Jian Cao, Qi Liu, Ganggang Zhang, Xing Zhang
{"title":"A novel ESD self-protecting symmetric nLDMOS for 60V SOI BCD process","authors":"Y. Wang, Guangyi Lu, Jian Cao, Qi Liu, Ganggang Zhang, Xing Zhang","doi":"10.1109/EDSSC.2013.6628102","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628102","url":null,"abstract":"A novel symmetric n-type lateral diffusion MOS (sym-nLDMOS) is presented. Fabricated without any extra mask in a standard 0.18 μm 60 V SOI BCD process, the new sym-nLDMOS has an ability of electrostatic discharge (ESD) self-protection. The TLP measured results show about 1X improvement of It2 in the novel sym-nLDMOS. The output characteristics of the novel device are also be measured.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128544991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Novel silicon-based tunneling FET with junction engineering and gate configuration for low power applications (invited) 具有结工程和栅极结构的低功耗应用新型硅基隧道场效应管(特邀)
2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI: 10.1109/EDSSC.2013.6628182
Ru Huang, Qianqian Huang, Zhan Zhan, Chunlei Wu, Y. Qiu, Yangyuan Wang
{"title":"Novel silicon-based tunneling FET with junction engineering and gate configuration for low power applications (invited)","authors":"Ru Huang, Qianqian Huang, Zhan Zhan, Chunlei Wu, Y. Qiu, Yangyuan Wang","doi":"10.1109/EDSSC.2013.6628182","DOIUrl":"https://doi.org/10.1109/EDSSC.2013.6628182","url":null,"abstract":"In this paper, two novel silicon-based TFETs are discussed, including Si junction-modulated TFET (JTFET) with the equivalent function to achieve ideally abrupt doping profile and multi-finger-gate TFET of dopant-segregated Schottky Barrier source (mFSB-TFET) with adaptive operation mechanism for better performance tradeoff.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128586013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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