Ru Huang, Qianqian Huang, Zhan Zhan, Chunlei Wu, Y. Qiu, Yangyuan Wang
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Novel silicon-based tunneling FET with junction engineering and gate configuration for low power applications (invited)
In this paper, two novel silicon-based TFETs are discussed, including Si junction-modulated TFET (JTFET) with the equivalent function to achieve ideally abrupt doping profile and multi-finger-gate TFET of dopant-segregated Schottky Barrier source (mFSB-TFET) with adaptive operation mechanism for better performance tradeoff.