1.8ppm/°C低温系数曲率补偿带隙的低电压应用

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628095

Chun Yang, Xiaole Cui, Bo Wang, Chung-Len Lee

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引用次数: 3

摘要

提出了一种新的CMOS曲率补偿带隙参考电路，该电路采用两种不同类型的材料在改进的结构下实现其电阻。采用0.18 μm工艺实现，在0 ~ 100°C范围内温度系数为1.8 ppm/°C，在1.2 ~3 V范围内电压稳压为0.017%/V，电源抑制比为82 dB@1 Hz。它可以提供1.1 V的参考电压，但占地面积仅为0.049 mm2。

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A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application

A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 μm technology, it achieves performance of a temperature coefficient of 1.8 ppm/°C over 0 ~ 100°C, a line regulation of 0.017%/V over the range 1.2 ~3 V and a power supply rejection ratio of 82 dB@1 Hz. It can offer a reference voltage of 1.1 V but occupy an area of only 0.049 mm2.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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