{"title":"A novel ESD self-protecting symmetric nLDMOS for 60V SOI BCD process","authors":"Y. Wang, Guangyi Lu, Jian Cao, Qi Liu, Ganggang Zhang, Xing Zhang","doi":"10.1109/EDSSC.2013.6628102","DOIUrl":null,"url":null,"abstract":"A novel symmetric n-type lateral diffusion MOS (sym-nLDMOS) is presented. Fabricated without any extra mask in a standard 0.18 μm 60 V SOI BCD process, the new sym-nLDMOS has an ability of electrostatic discharge (ESD) self-protection. The TLP measured results show about 1X improvement of It2 in the novel sym-nLDMOS. The output characteristics of the novel device are also be measured.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628102","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A novel symmetric n-type lateral diffusion MOS (sym-nLDMOS) is presented. Fabricated without any extra mask in a standard 0.18 μm 60 V SOI BCD process, the new sym-nLDMOS has an ability of electrostatic discharge (ESD) self-protection. The TLP measured results show about 1X improvement of It2 in the novel sym-nLDMOS. The output characteristics of the novel device are also be measured.