提高了高频掺杂BaTiO3作为闪存电荷捕获层的性能

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628237

X. Huang, P. Lai

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引用次数: 1

摘要

研究了含Hf和不含Hf的BaTiO3作为电荷捕获层(CTL)在闪存中的应用。与使用BaTiO3 CTL的器件相比，掺Hf的器件由于BaTiO3中掺入Hf抑制了泄漏，在程序速度和数据保留方面表现出更好的性能。因此，掺hf的BaTiO3是一种很有前途的用于闪存的CTL。

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Improved performance of Hf-doped BaTiO3 as charge-traping layer for flash memory applications

BaTiO₃ with and without Hf incorporation was studied as charge-trapping layer (CTL) for flash memory applications. Comparing with the device with BaTiO₃ CTL, the one with Hf-doped BaTiO₃ shows better performance in terms of higher program speed and better data retention due to suppressed leakage by Hf incorporated in BaTiO₃. Therefore, the Hf-doped BaTiO₃ is a promising candidate as CTL for flash memory application.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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