{"title":"基于物理的电迁移模型","authors":"R. L. de Orio, S. Selberherr","doi":"10.1109/EDSSC.2013.6628175","DOIUrl":null,"url":null,"abstract":"Interconnect lifetimes due to electromigration (EM) failures are traditionally described by a modified Black equation [1] equation (1) where tf is the time to failure (TTF), A is a constant, j is the electrical current density, n is a fitting parameter which describes the impact of the current density, Ea is the fitted activation energy representing the failure mechanism, k is Boltzmann's constant, and T is the temperature. Originally, Black's derivation resulted in n = 2 [1]. However, this was the source of an extensive debate [2], until more physically sound models showed that n = 2 is associated with a failure dominated by the void nucleation time [3], while n = 1 implies a failure dominated by the void growth time [4].","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Physically based models of electromigration\",\"authors\":\"R. L. de Orio, S. Selberherr\",\"doi\":\"10.1109/EDSSC.2013.6628175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Interconnect lifetimes due to electromigration (EM) failures are traditionally described by a modified Black equation [1] equation (1) where tf is the time to failure (TTF), A is a constant, j is the electrical current density, n is a fitting parameter which describes the impact of the current density, Ea is the fitted activation energy representing the failure mechanism, k is Boltzmann's constant, and T is the temperature. Originally, Black's derivation resulted in n = 2 [1]. However, this was the source of an extensive debate [2], until more physically sound models showed that n = 2 is associated with a failure dominated by the void nucleation time [3], while n = 1 implies a failure dominated by the void growth time [4].\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628175\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interconnect lifetimes due to electromigration (EM) failures are traditionally described by a modified Black equation [1] equation (1) where tf is the time to failure (TTF), A is a constant, j is the electrical current density, n is a fitting parameter which describes the impact of the current density, Ea is the fitted activation energy representing the failure mechanism, k is Boltzmann's constant, and T is the temperature. Originally, Black's derivation resulted in n = 2 [1]. However, this was the source of an extensive debate [2], until more physically sound models showed that n = 2 is associated with a failure dominated by the void nucleation time [3], while n = 1 implies a failure dominated by the void growth time [4].